摘要:
In an exposure apparatus, exposure light from a lamp (continuous light source) (9) is applied at an exposure station (exposure section) (2) to a substrate (4), which is being transferred at a fixed speed in a fixed direction by a substrate transfer section (5), through a mask (11) arranged on an optical axis (optical path) (S) of an exposure optical system (3). At the time of exposing an image of an opening section (11a) of the mask (11) on the substrate (4), the front edge and the side edge (pattern edge) of a pixel (reference pattern) (18) previously formed on the substrate (4) are photographed by a linear CCD (20) of an imaging section (6), and a reference position in the transfer direction and a direction vertical to such direction on the substrate (4) is detected. When the pixel (18) imaged by the imaging section (6) is shifted to an exposure position (E) form an imaging position (F), the exposure station (2) continuously exposes an exposure region along the transfer direction of the substrate (4) while adjusting the position of the mask (11) so that the position of the mask (11) matches with the reference position on the substrate (4).
摘要:
An apparatus for irradiating UV rays is provided to irradiate the UV rays of 300-400 nm to the UV curing body effectively without using a cut filter for cutting the harmful UV rays less than 300 nm. An apparatus for irradiating UV rays(100) comprises a high pressure mercury lamp(1) which comprises a discharge container made of quartz glass and containing mercury of 0.08-0.13 mg/mm^3, an inert gas and halogen gas of 2x10^-4 - 7x10^-3 mumol/mm^3, and a pair of tungsten electrodes arranged with a distance of 0.5-1.5 mm in the discharge container so as to face each other and irradiates UV rays of 300-400 nm; and a light collection unit which collects the light from the high pressure mercury lamp, wherein the UV rays of 300-400 nm are collected into the region of Phi5mm or less by the light collection unit so as to be irradiated to the target body.
摘要翻译:提供一种用于照射紫外线的装置,以有效地将紫外线照射300-400nm,而不使用切割过滤器来切割小于300nm的有害紫外线。 用于照射紫外线的装置(100)包括高压汞灯(1),其包括由石英玻璃制成的包含0.08-0.13mg / mm 3的汞的惰性气体和2×10 ^ 4〜7×10 -3 -3 mumol / mm 3,以及在放电容器中以0.5-1.5mm的距离排列的一对钨电极彼此面对并照射300-400nm的紫外线; 以及收集来自高压汞灯的光的光收集单元,其中通过光收集单元将300-400nm的紫外线收集到Phi5mm以下的区域中以照射到目标体。
摘要:
A thermosetting resin composition, a color filter containing a transparent layer prepared by using the composition, and a CMOS image sensor containing the color filter are provided to improve chemical resistance, smoothness, adhesion, transmissivity, strength and heat resistance and to reduce defective pattern. A thermosetting resin composition comprises a self-curing copolymer comprising the units represented by the formulas 1, 2, 3 and 4; and an organic solvent, wherein R1 is H or a methyl group; n is an integer of 1-10; R2 is H or a methyl group; m is an integer of 1-10; R3 is H or a methyl group; R4 is H or a methyl group; and Z is a group represented by the formula 5. Preferably the self-curing copolymer has a weight average molecular weight of 1,000-1,000,000.
摘要:
A resin composition for forming a pattern and a method for printing by in-plane method by using the composition are provided to improve the lifetime of a mold plate by reducing the stress generated in the separation of a mold plate and a substrate at in-plane printing process. A resin composition for forming a pattern comprises a liquid phase polymer precursor in an amount less than 10 %; 40-60 % of a hydrophilic acrylate; 10-20 % of a viscosity modifier; 1-5 % of a photoinitiator; and other additives in an amount less than 6 %. Preferably the liquid phase polymer precursor is octafluoropentyl acrylate or octafluoropentyl methacrylate; the hydrophilic acrylate is diethylene glycol diacrylate or diethylene glycol dimethacrylate; and the viscosity modifier is butyl acrylate or butyl methacrylate.
摘要:
본 발명은 광 조사를 이용한 금 식각 방법에 관한 것으로서, 간단한 장치와 인체나 환경에 유해성이 없는 화학 물질을 사용하고 공정을 단순화한 금 식각 방법과 그에 사용되는 장치를 제공하는 것을 목적으로 한다. 이러한 목적을 달성하기 위한 금 식각용 장치는 일 벽면에 광 투과창이 형성되고 염소 함유 유체가 충전된 용기와, 상기 용기 내에 시편을 장착하기 위한 시편 장착부와, 상기 용기의 외부에 마련되고 상기 광 투과창을 향하여 광을 조사하는 광원을 포함한다. 이와 같은 장치에서 금 또는 금 박막이 표면에 형성된 기판과 같은 시편에 광을 조사하여 금 식각을 행하게 된다.
摘要:
An illumination optical system is provided to improve capability of an illumination optical system by uniformly distributing the angle of the light that illuminates a mask as compared with a conventional technique. The surface of an object to be process is illuminated by an illumination optical system. The illumination optical system includes an optical system that converts the light from a light source into approximately parallel light, and the optical system has the first and second mirrors. The first mirror has an opening through which the light reflected by the second mirror passes.
摘要:
본 발명은, 반사형 또는 투과형의 표시부를 가지고, 해당 표시부에 노광해야 할 소정 화상을 표시하는 표시 장치와, 노광의 대상이 되는 기판을 지지하는 스테이지와, 상기 표시부 상에 표시된 상기 소정 화상을 상기 스테이지 상에 상기 기기판의 표면에 투영하는 텔리센트릭 타입의 투영 렌즈를 포함하는 투영 노광 장치이다.
摘要:
PURPOSE: A pattern formation method is provided to prevent the formation of footing or undercut on a resist pattern made up of a chemical amplification resist formed on a semiconductor substrate. CONSTITUTION: A surface of a semiconductor substrate is treated by using a surface treatment. A resist film is formed by spreading a chemical amplification type resist on the surface of the semiconductor substrate. The resist film is exposed by projecting DUV(deep ultraviolet). A resist pattern is formed by developing the exposed resist film. Herein, as the surface of the semiconductor substrate is pre-treated by the non-basic surface treatment, a basic element does not exist on the surface of the semiconductor substrate. Accordingly, upon the exposure process of the resist film, the neutralization of acid caused from PAG(photo acid generator) is avoided. Further, the resist pattern of a desired shape is obtained without footing or undercut between the semiconductor substrate and the resist pattern.
摘要:
PURPOSE: Provided is ultraviolet bake equipment capable of flowing photoresist which can progress a process that bakes photoresist by UV and flows photoresist in the same equipment. CONSTITUTION: The ultraviolet bake equipment contains i) a hot plate; ii) a heating coil that is installed at the inside to control the temperature of the hot plate; iii) a cooling pass that is installed at the lower side of the heating coil; and iv) a pin for maintaining distance that is able to maintain distance with a wafer that is installed at the upside surface of the hot plate.
摘要:
각종 고체소자의 미세패턴형성에 사용되는 패턴형성방법및 미세패턴형성에 사용되는 투영노출장치, 투영노출용 마스크, 마스크의 제조방법 및 마스크패턴의 레이아우트설계방법과 모든 광학기기에 사용되는 광학렌즈및 이들 광학렌즈내에 설치되는 광학필터로서, 복잡한 형상의 패턴에서는 근접효과가 증대하기 때문에 마스크형상과 같은 전사패턴이 얻어지지 않는다는 문제점을 해소하기위해, LSI 패턴형성등에 사용되는 투영노출장치의 투영렌즈의 푸필에 그의 최대반경으로 규격화된 반경방향좌표r의 함수로써, 대략 T(r)=(2πβr 2 -θ/2)로 표시되는 복소진폭 투과율분포를 갖는 광학필터를 마련하던가 또는 LSI상에 그려지는 레이아우트 패턴을 푸리에변환하고, 변환후의 패턴데이타에 cos (2πβf 2 -θ/2)를 곱하고, 이것을 푸리에역변환해서 얻어진 패� �� 또는 그의 근사해를 마스크패턴으로 해서 LSI를 노출제조한다. 이것에 의해 해상한계를 향상하기 위해 고NA화와 단파장화를 진행시킨 경우에도 깊은 초점심도와 높은 화상질을 양립시킬수가 있어 광학노출방식을 사용해서 0.2~0.3㎛의 패턴을 형성할 수 있다.