公开(公告)号：KR1020080033109A

公开(公告)日：2008-04-16

申请号：KR1020070102491

申请日：2007-10-11

申请人： 가부시끼가이샤 르네사스 테크놀로지

发明人： 이찌하라세이이찌 ,  오부찌아쯔시

IPC分类号： H01L21/66 ,  H01L21/60

CPC分类号： H01L22/14 ,  H01L24/16 ,  H01L24/29 ,  H01L24/32 ,  H01L24/81 ,  H01L24/83 ,  H01L2224/05001 ,  H01L2224/05022 ,  H01L2224/05144 ,  H01L2224/05155 ,  H01L2224/05164 ,  H01L2224/05166 ,  H01L2224/05184 ,  H01L2224/05567 ,  H01L2224/05572 ,  H01L2224/05573 ,  H01L2224/0558 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/05655 ,  H01L2224/05664 ,  H01L2224/05666 ,  H01L2224/05684 ,  H01L2224/1147 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/29006 ,  H01L2224/29082 ,  H01L2224/2919 ,  H01L2224/2929 ,  H01L2224/293 ,  H01L2224/3201 ,  H01L2224/32013 ,  H01L2224/32058 ,  H01L2224/32225 ,  H01L2224/81903 ,  H01L2224/83101 ,  H01L2224/8385 ,  H01L2224/83851 ,  H01L2224/9211 ,  H01L2924/13091 ,  H01L2224/81 ,  H01L2224/83 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2924/01074

摘要： A semiconductor device and a manufacturing method of the same are provided to avoid short-circuiting between adjacent bump electrodes, by arranging a partial area of each adjacent bump electrode to be shifted to each other, so that contacts between a probe needle and adjacent bump electrode are prevented. A manufacturing method of a semiconductor device comprises the steps of: forming a plurality of bump electrodes(4a,4b,4c) in a chip area of a semiconductor wafer; and executing an electrical property test by contacting a probe needle(6a,6b,6c) arranged in zigzag to the bump electrodes. Each adjacent bump electrode of the bump electrodes has a partial area that is shifted to each other.

摘要翻译： 提供了一种半导体器件及其制造方法，以通过将每个相邻的凸块电极的部分区域彼此移位来避免相邻的凸起电极之间的短路，从而使探针与相邻凸块电极之间的接触 被阻止 半导体器件的制造方法包括以下步骤：在半导体晶片的芯片区域中形成多个凸起电极（4a，4b，4c）; 并通过将以锯齿形布置的探针（6a，6b，6c）与凸起电极接触来执行电性能测试。 凸块电极的每个相邻凸起电极具有彼此偏移的部分区域。