公开(公告)号：KR102055538B1

公开(公告)日：2019-12-13

申请号：KR1020120063666

申请日：2012-06-14

Applicant: 가부시키가이샤 한도오따이 에네루기 켄큐쇼

Inventor： 요시오카교코 ,  고에즈카준이치 ,  오노신지 ,  사토유이치 ,  사사가와신야

IPC: H01L29/786

公开(公告)号：KR1020120125172A

公开(公告)日：2012-11-14

申请号：KR1020120046790

申请日：2012-05-03

Applicant: 가부시키가이샤 한도오따이 에네루기 켄큐쇼

Inventor： 고에즈카준이치 ,  야마데나오토 ,  요시오카교코 ,  사토유헤이 ,  테라시마마리

IPC: H01L29/786 ,  H01L21/336

CPC classification number: H01L29/7869 ,  H01L21/02667 ,  H01L21/04 ,  H01L29/66742

Abstract: PURPOSE: A semiconductor device is provided to prevent defects generated in the interface by forming an oxide aluminum film on an amorphous oxide semiconductor layer so that oxygen in the amorphous oxide semiconductor layer is not emitted and heat-treating it. CONSTITUTION: An amorphous oxide is formed on a semiconductor layer. A gate insulating layer(406) is formed on an amorphous oxide semiconductor layer(404). Oxygen is injected into the amorphous oxide semiconductor layer so that the amorphous oxide semiconductor layer comprises an area which contains the oxygen exceeding chemical composition ratio. A gate electrode(410) is formed on the gate insulating layer. An insulating layer which includes an aluminum oxide is formed in the gate electrode.

Abstract translation: 目的：提供半导体器件以通过在非晶氧化物半导体层上形成氧化物铝膜来防止在界面中产生的缺陷，使得非晶氧化物半导体层中的氧不被发射并对其进行热处理。 构成：在半导体层上形成无定形氧化物。 在非晶氧化物半导体层（404）上形成栅极绝缘层（406）。 将氧气注入到非晶氧化物半导体层中，使得非晶氧化物半导体层包括含氧超过化学组成比的区域。 栅电极（410）形成在栅极绝缘层上。 在栅电极中形成包含氧化铝的绝缘层。

公开(公告)号：KR1020120139570A

公开(公告)日：2012-12-27

申请号：KR1020120063666

申请日：2012-06-14

Applicant: 가부시키가이샤 한도오따이 에네루기 켄큐쇼

Inventor： 요시오카교코 ,  고에즈카준이치 ,  오노신지 ,  사토유이치 ,  사사가와신야

IPC: H01L29/786

CPC classification number: H01L29/7869 ,  H01L21/324 ,  H01L29/66969 ,  H01L29/66742 ,  H01L29/04

Abstract: PURPOSE: A semiconductor device and a manufacturing method thereof are provided to reduce power consumption by decreasing an average surface roughness of a surface of an oxide semiconductor layer. CONSTITUTION: An oxide semiconductor layer(55) is formed on an insulation surface. An average surface roughness of an oxide semiconductor layer is reduced by irradiating oxygen ions(53) to the oxide semiconductor layer. A gate insulation layer(63) is formed on the oxide semiconductor layer after the oxygen ions are irradiated to the oxide semiconductor layer. A gate electrode is formed on the gate insulation layer to overlap the oxide semiconductor layer. An oxide semiconductor layer including a crystal with a C axis which is vertical to the surface of the oxide semiconductor layer is formed by heating the oxide semiconductor layer after the oxygen ions are irradiated to the oxide semiconductor layer.

Abstract translation: 目的：提供半导体器件及其制造方法，通过降低氧化物半导体层的表面的平均表面粗糙度来降低功耗。 构成：在绝缘表面上形成氧化物半导体层（55）。 通过向氧化物半导体层照射氧离子（53）来减小氧化物半导体层的平均表面粗糙度。 在氧离子照射到氧化物半导体层之后，在氧化物半导体层上形成栅极绝缘层（63）。 栅电极形成在栅极绝缘层上以与氧化物半导体层重叠。 通过在将氧离子照射到氧化物半导体层上之后加热氧化物半导体层，形成包括与氧化物半导体层的表面垂直的C轴的晶体的氧化物半导体层。