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    마스크재 조성물, 불순물 확산층의 형성 방법, 및 태양 전지
    3.
    发明公开
    마스크재 조성물, 불순물 확산층의 형성 방법, 및 태양 전지 有权
    掩模材料组合物，形成稀土扩散层的方法和太阳能电池

    公开(公告)号：KR1020110050369A

    公开(公告)日：2011-05-13

    申请号：KR1020100108582

    申请日：2010-11-03

    Applicant: 도오꾜오까고오교 가부시끼가이샤

    Inventor： 다카하시모토키 ,  모리타도시로 ,  히라이다카아키

    IPC: C08L83/04 ,  C08G77/04 ,  H01L31/068 ,  H01L21/225 ,  H01L31/18

    CPC classification number: H01L31/1804 ,  C08G77/04 ,  C08G77/70 ,  C08L83/04 ,  H01L21/2254 ,  H01L31/0682 ,  Y02E10/547 ,  Y02P70/521 ,  H01L31/068

    Abstract: PURPOSE: A mask material composition is provided to enable use for a diffusion barrier of an impurity diffusing component into a semiconductor substrate. CONSTITUTION: A mask material composition comprises a siloxane resin containing a repeating unit represented by chemical formula (a1). In chemical formula (a1), R1 is a single bond or C1~5 alkylene group; and R2 is C6~20 aryl group. A method for forming an impurity diffusion layer comprises the steps of: selectively applying the mask material composition to a semiconductor substrate; and selectively applying impurity diffusion components to the semiconductor substrate using the mask material composition as a mask.

    Abstract translation: 目的：提供掩模材料组合物，以使得能够将杂质扩散组分的扩散势垒用于半导体衬底。 构成：掩模材料组合物包含含有由化学式（a1）表示的重复单元的硅氧烷树脂。 在化学式（a1）中，R1是单键或C1〜5亚烷基; R2为C6〜20芳基。 一种用于形成杂质扩散层的方法包括以下步骤：将掩模材料组合物选择性地施加到半导体衬底; 并使用掩模材料组合物作为掩模，将杂质扩散组分选择性地施加到半导体衬底。

    확산제 조성물 및 불순물 확산층의 형성 방법
    5.
    发明公开
    확산제 조성물 및 불순물 확산층의 형성 방법 审中-实审
    扩散剂组合物和形成破坏层的方法

    公开(公告)号：KR1020120050909A

    公开(公告)日：2012-05-21

    申请号：KR1020110116839

    申请日：2011-11-10

    Applicant: 도오꾜오까고오교 가부시끼가이샤

    Inventor： 모리타도시로 ,  가미조노다카시

    IPC: H01L21/225 ,  H01L31/04

    CPC classification number: H01L31/186 ,  H01L21/2225 ,  H01L21/2254 ,  H01L21/228 ,  H01L31/0682 ,  H01L31/1804 ,  H01L51/0096 ,  H01L51/448 ,  H01L51/5253 ,  Y02E10/547 ,  Y02E10/549 ,  Y02P70/521

    Abstract: PURPOSE: A dispersing agent composition and an impurity diffusion layer formation method are provided to improve diffusion properties of impurity diffusion components with respect to a semiconductor substrate. CONSTITUTION: A p-type dispersing agent composition(3) which includes p-type impurity diffusion components and an n-type dispersing agent composition(2) which includes n-type impurity diffusion components are selectively applied on a semiconductor substrate(1) using an inkjet method. An n-type impurity diffusion layer(4) is formed by diffusing the n-type impurity diffusion components to the semiconductor substrate. An p-type impurity diffusion layer(5) is formed by diffusing the p-type impurity diffusion components to the semiconductor substrate.

    Abstract translation: 目的：提供分散剂组合物和杂质扩散层形成方法，以改善杂质扩散组分相对于半导体衬底的扩散性能。 构成：在半导体衬底（1）上选择性地将包括p型杂质扩散组分的p型分散剂组合物（3）和包括n型杂质扩散组分的n型分散剂组合物（2） 喷墨法。 通过将n型杂质扩散组分扩散到半导体衬底而形成n型杂质扩散层（4）。 通过将p型杂质扩散组分扩散到半导体衬底而形成p型杂质扩散层（5）。

    도포형 확산제 조성물
    6.
    发明公开
    도포형 확산제 조성물 审中-实审
    可涂抹剂组合物

    公开(公告)号：KR1020120056777A

    公开(公告)日：2012-06-04

    申请号：KR1020110122038

    申请日：2011-11-22

    Applicant: 도오꾜오까고오교 가부시끼가이샤

    Inventor： 모리타도시로 ,  가미조노다카시

    IPC: C09D11/30 ,  H01L31/042 ,  C09D183/02

    CPC classification number: Y02E10/50 ,  C09D11/30 ,  C09D183/02 ,  H01L31/042

    Abstract: PURPOSE: A coatable diffusing agent composition is provided to obtain enough membrane thickness after being spread to a semiconductor substrate, and to restrain the generation of a crack, in case of being spread to a substrate with level difference, and being plasticized and diffused. CONSTITUTION: A coatable diffusing agent composition comprises a condensate which is from alkoxysilane as a starting material in chemical formula 1: R^1_mSi(OR^2)_(4-m), an impurity-diffusing component, and an organic solvent. In chemical formula 1, R^1 and R^2 are organic groups, a plurality of R^1 and R^2 are same or different each other, m is 0,1 or 2, but if m=0, the condensate is formed by a plurality of the alkoxysilane, and if m=1 or 2, containing alkoxysilane essentially.

    Abstract translation: 目的：提供可涂覆的扩散剂组合物，以在扩散到半导体衬底之后获得足够的膜厚度，并且在扩散到具有水平差的衬底并被塑化和扩散的情况下抑制裂纹的产生。 构成：可涂敷的扩散剂组合物包含作为化学式1中的起始原料的烷氧基硅烷的缩合物：R 1，M 2（OR 2）（4-m），杂质扩散组分和有机溶剂。 在化学式1中，R 1和R 2是有机基团，多个R 1和R 2彼此相同或不同，m是0,1或2，但如果m = 0，则缩合物 由多个烷氧基硅烷形成，如果m = 1或2，则基本上含有烷氧基硅烷。

    막 형성 조성물
    8.
    发明公开
    막 형성 조성물 有权
    成膜组合物

    公开(公告)号：KR1020090026310A

    公开(公告)日：2009-03-12

    申请号：KR1020087031907

    申请日：2007-07-02

    Applicant: 도오꾜오까고오교 가부시끼가이샤

    Inventor： 모리타도시로

    IPC: C08L83/00 ,  C09D183/00 ,  H01L21/225 ,  H01L21/312

    CPC classification number: C08L71/02 ,  C08L83/04 ,  C09D171/02 ,  C09D183/00 ,  C09D183/04 ,  C09D183/16 ,  H01L21/2225 ,  H01L21/2254 ,  C08L83/00

    Abstract: Disclosed is a film-forming composition to be used in a coating diffusion method, which enables to diffuse an impurity of higher concentration into a silicon wafer, while forming a silica coating film at the same time. Specifically disclosed is a film-forming composition for forming a diffusion film on a silicon wafer for diffusing an impurity element into the silicon wafer. This film-forming composition contains (A) a high molecular weight silicon compound, (B) an oxide of the impurity element or a salt containing the element, and (C) a porogen.

    Abstract translation: 公开了一种在涂布扩散方法中使用的成膜组合物，其能够将同时形成二氧化硅涂膜的较高浓度的杂质扩散到硅晶片中。 具体公开了一种用于在硅晶片上形成用于将杂质元素扩散到硅晶片中的扩散膜的成膜组合物。 该成膜组合物含有（A）高分子量硅化合物，（B）杂质元素的氧化物或含有元素的盐，（C）致孔剂。

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