-
公开(公告)号：KR1020080103565A
公开(公告)日：2008-11-27
申请号：KR1020087022539
申请日：2007-02-13
Applicant: 메르크 퍼포먼스 마테리알즈 고도가이샤
IPC: G03F7/32 , H01L21/027
CPC classification number: G03F7/425 , G03F7/327 , G03F7/70925
Abstract: It is intended to provide a processing liquid for resist substrates, which makes it possible to simultaneously and readily solve the problems of foreign matters sticking to pattern surface, pattern inversion and pattern roughness, and a pattern formation method using the same. This processing liquid for resist substrates contains a primary amine or an ammonia alkylene oxide adduct having a hydrocarbon group carrying from 11 to 30 carbon atoms together with water. The pattern formation method as described above comprises processing a developed pattern with the use of the processing liquid for resist substrates.
Abstract translation: 旨在提供一种用于抗蚀剂基板的处理液体，这使得可以同时且容易地解决粘附在图案表面上的异物，图案反转和图案粗糙度的问题，以及使用该处理液的图案形成方法。 该抗蚀剂基板用处理液含有与水一起具有11〜30个碳原子的烃基的伯胺或氨环氧烷加成物。 如上所述的图案形成方法包括使用用于抗蚀剂基板的处理液来处理显影图案。
-
Patent Agency Ranking
公开(公告)号：KR101340863B1
公开(公告)日：2013-12-13
申请号：KR1020087022539
申请日：2007-02-13
Applicant: 메르크 퍼포먼스 마테리알즈 고도가이샤
IPC: G03F7/32 , H01L21/027
CPC classification number: G03F7/425
Abstract: 패턴 표면의 이물, 패턴 쓰러짐, 및 패턴 조도의 문제를 동시에 간편하게 해결할 수 있는 레지스트용 기판 처리액과 이를 사용한 패턴 형성 방법을 제공한다. 이 레지스트 기판용 처리액은, 탄소수 11 내지 30의 탄화수소기를 갖는 1급 아민 또는 암모니아의 알킬렌옥사이드 부가물, 및 물을 포함하여 이루어진다. 또한, 본 발명에 의한 패턴 형성 방법은, 이의 레지스트 기판 처리액을 사용하여 현상 후의 패턴을 처리하는 것을 포함한다.
레지스트 기판 처리액, 패턴 형성방법, 패턴 조도.-
公开(公告)号：KR1020090084937A
公开(公告)日：2009-08-05
申请号：KR1020097012374
申请日：2007-11-15
Applicant: 메르크 퍼포먼스 마테리알즈 고도가이샤
Abstract: This invention provides a composition for upper surface antireflection film formation, which prevents pattern failure caused by reflection in a film in an exposure process and is free from a problem of a residue in an etching process, and a method for pattern formation using the same. The composition for upper surface antireflection film formation contains fine particles having a diameter of 1 to 100 nm and a solvent. The method for pattern formation comprises forming an upper surface antireflection film using the composition for upper surface antireflection film formation. The composition and the method can realize the formation of a composite film comprising a resist film and the upper surface antireflection film. ® KIPO & WIPO 2009
Abstract translation: 本发明提供了一种用于上表面抗反射膜形成的组合物，其防止在曝光过程中由膜反射引起的图案故障，并且在蚀刻工艺中没有残留物的问题，以及使用该组合物的图案形成方法。 用于上表面抗反射膜形成的组合物包含直径为1至100nm的细颗粒和溶剂。 图案形成方法包括使用上表面抗反射膜形成用组合物形成上表面抗反射膜。 该组合物和方法可以实现包含抗蚀剂膜和上表面抗反射膜的复合膜的形成。 ®KIPO＆WIPO 2009
-
公开(公告)号：KR1020090082232A
公开(公告)日：2009-07-29
申请号：KR1020097010254
申请日：2007-10-12
Applicant: 메르크 퍼포먼스 마테리알즈 고도가이샤
IPC: G03F7/40
CPC classification number: G03F7/40 , Y10S430/106 , Y10S430/107 , Y10S430/11 , Y10T428/24802
Abstract: Disclosed is a method for miniaturizing a pattern without largely impairing the production cost or production efficacy. Also disclosed is a microfine resist pattern. Further disclosed is a resist substrate treatment solution for achieving the microfine resist pattern. Specifically disclosed is a method for forming a pattern, which comprises the step of treating a resist pattern formed after a development processing procedure with a resist substrate treatment solution containing a water-soluble polymer having an amino group (particularly, a tertiary polyamine), thereby reducing the effective size of the resist pattern formed by the development processing procedure. Also specifically disclosed are a resist pattern formed by the method and a treatment solution for use in the method.
Abstract translation: 公开了一种使模式小型化而不会严重损害生产成本或生产效率的方法。 还公开了微细抗蚀剂图案。 进一步公开了用于实现微细抗蚀剂图案的抗蚀剂基板处理溶液。 具体公开了一种形成图案的方法，其包括用含有具有氨基的水溶性聚合物（特别是叔多胺）的抗蚀剂基板处理溶液处理在显影处理程序之后形成的抗蚀剂图案的步骤，由此 减少由显影处理程序形成的抗蚀剂图案的有效尺寸。 还具体公开了通过该方法形成的抗蚀剂图案和用于该方法的处理溶液。
-
公开(公告)号：KR1020090079242A
公开(公告)日：2009-07-21
申请号：KR1020097010135
申请日：2007-10-12
Applicant: 메르크 퍼포먼스 마테리알즈 고도가이샤
IPC: G03F7/32 , H01L21/304
CPC classification number: G03F7/40
Abstract: Disclosed is a resist substrate treatment solution for improving defects on the surface of a pattern formed by a development processing. Also disclosed is a method for the treatment of a resist substrate using the resist substrate treatment solution. The resist substrate treatment solution comprises a nitrogen-containing water-soluble polymer or an oxygen-containing water-soluble polymer (e.g., a polyamine, a polyol, a polyether) and a solvent. The method comprises the steps of treating a resist pattern formed by a development processing with the resist substrate treatment solution and washing the resist pattern with pure water.
Abstract translation: 公开了一种用于改善通过显影处理形成的图案的表面上的缺陷的抗蚀剂基板处理溶液。 还公开了使用抗蚀剂基板处理溶液处理抗蚀剂基板的方法。 抗蚀剂基底处理溶液包含含氮水溶性聚合物或含氧水溶性聚合物（例如多胺，多元醇，聚醚）和溶剂。 该方法包括以下步骤：用抗蚀剂基底处理溶液处理由显影处理形成的抗蚀剂图案，并用纯水洗涤抗蚀剂图案。
-
公开(公告)号：KR1020090027251A
公开(公告)日：2009-03-16
申请号：KR1020097001388
申请日：2007-06-22
Applicant: 메르크 퍼포먼스 마테리알즈 고도가이샤
IPC: G03F7/40 , H01L21/027 , G02B5/20
CPC classification number: G03F7/40 , H01L21/0273 , Y10T428/24802 , G03F7/405 , G03F7/70908 , H01L21/0274
Abstract: A method of pattern formation in which a developed resist pattern is microfined without considerably impairing production cost or production efficiency. This method comprises a step in which a resist patter which has been developed is brought into contact with a treating liquid containing a nonionic surfactant, preferably a polyether surfactant, for 60 seconds or longer to thereby shrink the effective size of the resist pattern formed by development. Also provided is a resist pattern microfined by this method.
Abstract translation: 显影抗蚀剂图案被微细化而不显着损害生产成本或生产效率的图案形成方法。 该方法包括使已显影的抗蚀剂图案与含有非离子表面活性剂，优选聚醚表面活性剂的处理液接触60秒以上，从而缩小由显影形成的抗蚀剂图案的有效尺寸 。 还提供了通过该方法微细化的抗蚀剂图案。
-
-
-
-
-
Search Results
6
records
(took 0.014 seconds)
