摘要:
An etchant composite for forming a metal wiring and a method for patterning a conductive film and for manufacturing a flat panel display using the etchant composite are provided to extend the lifetime of etchant by lowering the vocalization of the oxidizer. A manufacturing method of a flat panel display using the etchant composite for forming a metal wiring comprises a substrate(100). A gate wiring and a gate electrode(110) are formed by forming a first conductive film on the substrate and patterning. A semiconductor layer is formed on the top of the substrate in which the gate wiring is formed. After forming a second conductive film on the semiconductor layer and patterning, and then a source electrode(140a) and a drain electrode(140b) are formed. A protective layer(150) has a contact hole(CNT) exposing one part of the drain electrode is built up. A third conductive film is electrically connected with the drain electrode through a contact hole and located on the protective layer. The third conductive film is patterned to form a pixel electrode(160).
摘要:
PURPOSE: An etchant composition is provided to maintain adhesive force between an insulating substrate and photosensitive pattern and to make etch profile good through simplification of a process. CONSTITUTION: An etchant composition includes phosphoric acid 80 ~ 90 weight%, sulfuric acid 0.1 ~ 5 weight%, and ammonium fluoride 0.1 ~ 2 weight%. A method for forming metal pattern comprises the steps of: forming a photosensitive pattern which partially exposes the insulating substrate on the insulating substrate(110); forming a trench on the insulating substrate by etching a part of exposed insulating substrate. The seed layer including a first seed layer located on the photosensitive pattern and a second seed layer located on the trench; removing the photosensitive pattern and the first seed layer by lift off the photosensitive pattern; and forming a wiring layer(124c) on the second seed layer with an electroless plating method.
摘要:
PURPOSE: An etchant composition for metal wiring is provided to etch a multi-layered film including copper in one time and to obtain an etch rate suitable for a processing, proper etching amount and proper taper inclination angle. CONSTITUTION: An etchant composition for metal wiring comprises 5-25 weight% of peroxides, 0.5-5 weight% of oxidizing agents, 0.1-1 weight% of fluoride-based compound and 1-10 weight% of glycohols. The peroxides comprise ammonium persulfates, sodium persulfates, potassium persulfates or mixture thereof. The oxidizing agent comprises potassium hydrogen sulfate, sodium nitrate, ammonium sulfate, sodium sulfate, sodium hydrogen sulfate or mixture thereof.
摘要:
PURPOSE: A thin film transistor substrate and a manufacturing method thereof are provided to omit an additional etching process by etching a conductive layer for a pixel electrode and an oxide semiconductor layer. CONSTITUTION: A gate line(22) including a gate electrode(26) is formed on a substrate(10). An oxide semiconductor layer pattern(42) is formed on a transistor region and a pixel electrode forming region. A data line is formed on the oxide semiconductor layer pattern. A protection pattern(55,56) for the oxide semiconductor layer is formed between a source electrode and the oxide semiconductor layer pattern and between a drain electrode and the oxide semiconductor layer pattern. A pixel electrode(82) is electrically connected to the drain electrode.