公开(公告)号：KR1020070080728A

公开(公告)日：2007-08-13

申请号：KR1020060012134

申请日：2006-02-08

申请人： 삼성전자주식회사

发明人： 민영민 ,  김진만 ,  양윤식 ,  이광명 ,  허노현

IPC分类号： H01L21/68

摘要： A lift pin assembly, an ashing apparatus and an ashing method are provided to prevent the pop-up and warpage of a wafer due to an abrupt variation of temperature by making a lift pin fall gradually using an improved driving unit with a step motor and a screw. A lift pin assembly includes a plurality of lift pins and a driving unit. The plurality of lift pins(110) movie up and down along a plurality of through holes of a support member. The lift pins are used for loading stably a wafer on the support member. The driving unit(130) is used for moving the lift pins step by step. The driving unit is composed of a step motor(132) capable of rotating by a predetermined angle and a screw. The screw(134) is connected to the step motor in order to change the rotation of the step motor into the up/down motion of the lift pins.

摘要翻译： 提供升降销组件，灰化装置和灰化方法，以通过使用具有步进电动机的改进的驱动单元使升降销逐渐降低而防止由于温度的突然变化导致的晶片的弹起和翘曲 拧。 提升销组件包括多个提升销和驱动单元。 多个提升销（110）沿着支撑构件的多个通孔上下移动。 提升销用于将晶片稳定地装载在支撑构件上。 驱动单元（130）用于逐步移动提升销。 驱动单元由能够以预定角度旋转的步进马达（132）和螺杆构成。 螺钉（134）连接到步进电机，以便将步进电机的旋转改变为提升销的上/下运动。

公开(公告)号：KR100542745B1

公开(公告)日：2006-01-11

申请号：KR1020040114015

申请日：2004-12-28

申请人： 삼성전자주식회사 ,  주식회사 뉴파워 프라즈마

发明人： 민영민 ,  최대규 ,  배도인 ,  양윤식 ,  황완구 ,  김진만

IPC分类号： H05H1/30

摘要： 리모트 방식의 플라즈마를 생성하는 방법 및 장치 그리고, 상기 플라즈마를 사용하는 반도체 제조 공정의 수행 방법 및 장치가 개시되어 있다. 축 방향을 갖는 주-자기장과, 상기 축 방향과 평행한 방향을 갖는 보조-자기장을 형성하다. 상기 주-자기장의 자기력선과 동일한 변위를 갖는 경로로 가스를 플로우시키고, 고주파 교류 전류를 인가하여, 가스 플라즈마를 생성한다. 상기 가스 플라즈마를 공정 챔버로 공급하여 상기 가스 플라즈마를 사용하는 반도체 제조 공정을 수행한다. 높은 효율로 플라즈마 가스를 생성할 수 있고, 저렴한 플라즈마 생성용 가스를 사용할 수 있다.

摘要翻译： 公开了一种用于产生远程类型的等离子体的方法和设备，以及用于使用等离子体执行半导体制造工艺的方法和设备。 具有轴向的磁场和具有与轴向平行的方向的辅助磁场。 气体流过与主磁场的磁力线具有相同位移的路径，并且施加高频交流电以产生气体等离子体。 将气体等离子体供应至处理室以使用气体等离子体执行半导体制造工艺。 可以高效地产生等离子体气体，并且可以使用便宜的等离子体产生气体。

公开(公告)号：KR1020050013188A

公开(公告)日：2005-02-03

申请号：KR1020040114012

申请日：2004-12-28

申请人： 삼성전자주식회사 ,  주식회사 뉴파워 프라즈마

发明人： 민영민 ,  최대규 ,  배도인 ,  양윤식 ,  황완구 ,  김진만

IPC分类号： H05H1/30

CPC分类号： H01J37/32449 ,  H01J37/321 ,  H01J37/32458 ,  H01J2237/334 ,  H01L21/3065 ,  H05H1/46 ,  H05H2001/4652

摘要： PURPOSE: A method and an apparatus of generating gas plasma, a gas composition of generating plasma, and a method of fabricating a semiconductor device using the same are provided to reduce the manufacturing cost by using an inexpensive gas such as C3F8. CONSTITUTION: A first electric field is formed in a first direction perpendicular to a flowing direction of floating gas by applying a current in the same direction as the flowing direction of the floating gas. A second electric field is formed in parallel to the flowing direction of the floating gas. Plasma is generated by applying the first electric field and the second electric field to the floating gas. The floating gas includes gas containing fluoric atoms, oxygen gas, and argon gas.

摘要翻译： 目的：提供一种产生气体等离子体的方法和装置，产生等离子体的气体组成以及使用其制造使用其的半导体器件的方法，以通过使用诸如C3F8的廉价气体来降低制造成本。 构成：通过沿与浮动气体的流动方向相同的方向施加电流，在垂直于浮动气体的流动方向的第一方向上形成第一电场。 与浮置气体的流动方向平行地形成第二电场。 通过将第一电场和第二电场施加到浮置气体而产生等离子体。 浮选气体包括含有氟原子，氧气和氩气的气体。

公开(公告)号：KR1020040041416A

公开(公告)日：2004-05-17

申请号：KR1020020069776

申请日：2002-11-11

申请人： 삼성전자주식회사 ,  주식회사 뉴파워 프라즈마

发明人： 민영민 ,  최대규 ,  배도인 ,  양윤식 ,  황완구 ,  김진만

IPC分类号： H05H1/30

CPC分类号： H01L21/31116 ,  H01J37/321 ,  H01J37/32357 ,  Y02C20/30 ,  Y02P70/605

摘要： PURPOSE: A method and an apparatus for generating gas plasma, a gas composition for generating plasma, and a method for fabricating a semiconductor device using the same are provided to increase the productivity of the plasma in a plasma generation process using a remote method by shortening a period of time for generating the plasma. CONSTITUTION: A method for generating gas plasma includes a process for forming magnetic field, a process for providing electric power, and a process for forming gas plasma. The process for forming magnetic field is to form the main magnetic field having the axial direction and the auxiliary magnetic field having the direction parallel to the axial direction. The process for providing electric power is to apply the RF AC current to a path within a region between the main magnetic field and the auxiliary magnetic field. The process for forming gas plasma is to generate the gas plasma by flowing the gas to the same path as the path for applying the electric power. The path for applying the electric power is formed with a spiral path.

摘要翻译： 目的：提供一种用于产生气体等离子体的方法和装置，用于产生等离子体的气体组合物和使用其的半导体装置的制造方法，以通过缩短使用远程方法来提高等离子体产生过程中的等离子体的生产率 产生等离子体的时间段。 构成：用于产生气体等离子体的方法包括形成磁场的过程，用于提供电力的过程以及用于形成气体等离子体的工艺。 形成磁场的过程是形成具有轴向方向和辅助磁场方向平行于轴向的主磁场。 提供电力的过程是将RF AC电流施加到主磁场和辅助磁场之间的区域内的路径。 用于形成气体等离子体的方法是通过使气体流动到与施加电力的路径相同的路径来产生气体等离子体。 施加电力的路径形成有螺旋路径。

公开(公告)号：KR100397047B1

公开(公告)日：2003-09-02

申请号：KR1020010024833

申请日：2001-05-08

申请人： 삼성전자주식회사

发明人： 김진만 ,  양윤식 ,  전상준 ,  민영민

IPC分类号： H01L21/00

CPC分类号： H01L21/67248 ,  F25D17/02 ,  H01L21/6831

摘要： A refrigeration system regulates the temperature of an electrostatic wafer chuck disposed in a process chamber. The refrigeration system includes a heat exchanger disposed in a heat exchange relationship with the electrostatic chuck, a refrigerator, a temperature sensor, and a temperature controller for controlling the refrigerator to cool the coolant withdrawn from the heat exchanger to a desired temperature in response to the temperature detected by the temperature sensor. The heat exchanger forms a coolant passageway inside the electrostatic chuck, and the refrigerator is disposed outside the process chamber The temperature sensor is disposed within the body of the electrostatic chuck. The temperature of the electrostatic chuck can be regulated so as to be maintained nearly constant because the temperature used to control the cooling of the coolant is measured directly from the body of the electrostatic chuck.

摘要翻译： 制冷系统调节设置在处理室中的静电晶片卡盘的温度。 制冷系统包括与静电吸盘以热交换关系布置的热交换器，制冷器，温度传感器和温度控制器，用于控制制冷器以响应于制冷剂将从换热器抽出的制冷剂冷却到期望的温度 温度传感器检测到的温度。 热交换器在静电吸盘内部形成冷却剂通道，并且冰箱设置在处理室外部。温度传感器设置在静电吸盘的主体内。 因为用于控制冷却剂冷却的温度直接从静电吸盘的主体测量，所以可以调节静电吸盘的温度以保持接近恒定。

公开(公告)号：KR1020000001508A

公开(公告)日：2000-01-15

申请号：KR1019980021807

申请日：1998-06-11

申请人： 삼성전자주식회사

发明人： 민영민 ,  김민규

IPC分类号： H03H7/00

CPC分类号： H03H7/38 ,  H03H7/0115 ,  H03H11/28 ,  H05H1/46

摘要： PURPOSE: An impedance matching device of a high frequency oscillator is described, which can enhance efficiency of high frequency power supplied to a load and improve the function of a matching device. CONSTITUTION: The impedance matching device comprises a teflon-made insulator, connected with an oscillator in which high frequency power is applied, insulating a induction coil to have a transformer transforming the high frequency power into a predetermined size, and a condenser, connected with the transformer, condensing high frequency power of the transformed size. Consequentially, an impedance is matched between the oscillator and the predetermined load. Thereby, material of the insulator applied to the transformer is altered and characteristics of the condenser is improved, allowing the impedance matching therebetween to be stable.

摘要翻译： 目的：描述高频振荡器的阻抗匹配装置，可以提高提供给负载的高频功率的效率，提高匹配装置的功能。 构成：阻抗匹配装置包括与施加高频功率的振荡器连接的聚四氟乙烯制绝缘体，绝缘感应线圈以使变压器将高频功率变换成预定尺寸;以及冷凝器，其与 变压器，冷凝高频功率的变换尺寸。 因此，阻抗在振荡器和预定负载之间匹配。 因此，施加到变压器的绝缘体的材料被改变，并且电容器的特性得到改善，使得它们之间的阻抗匹配是稳定的。

公开(公告)号：KR1019990033659A

公开(公告)日：1999-05-15

申请号：KR1019970055075

申请日：1997-10-25

申请人： 삼성전자주식회사

发明人： 민병호 ,  민영민 ,  유희용

IPC分类号： H01L21/027

摘要： 본 발명은 타이틀러를 이용한 웨이퍼의 코드마킹방법에 관한 것이다.
본 발명은, 셔터의 개폐작동으로 웨이퍼 상에 상기 웨이퍼를 식별하는 코드를 마킹하는 타이틀러를 이용하여 상기 웨이퍼 상에 식별코드 및 선택코드를 순차적으로 마킹하는 타이틀러를 이용한 웨이퍼의 코드마킹방법에 있어서, 상기 선택코드의 마킹은 상기 식별코드가 마킹된 자리수만큼 상기 타이틀러를 셔터의 개폐작동없이 이동시킨 후, 상기 선택코드의 마킹을 수행함을 특징으로 한다.
따라서, 공정수행의 소요시간을 단축시킬 수 있어 생산성이 향상되고, 타이틀러의 셔터의 수명을 연장시킬 수 있어 제조설비의 유지보수가 향상되는 효과가 있다.

公开(公告)号：KR1020050013187A

公开(公告)日：2005-02-03

申请号：KR1020040114006

申请日：2004-12-28

申请人： 삼성전자주식회사 ,  주식회사 뉴파워 프라즈마

发明人： 민영민 ,  최대규 ,  배도인 ,  양윤식 ,  황완구 ,  김진만

IPC分类号： H05H1/30

CPC分类号： H01J37/32449 ,  C23C16/0245 ,  C23C16/505 ,  H01J37/321 ,  H01L21/3065 ,  H05H1/46 ,  H05H2001/4652

摘要： PURPOSE: A method and an apparatus of generating gas plasma, a gas composition of generating plasma, and a method of fabricating a semiconductor device using the same are provided to enhance productivity by improving efficiency of generation and reducing a generating period in a plasma generating process using a remote method. CONSTITUTION: A first electric field(48a) is generated at a plasma generating member or a gas floating member(43) by an RF current supplied from a power supply unit(45). A second electric field(48b) is generated at the plasma generating member or the gas floating member by a main magnetic field forming part and an auxiliary magnetic field forming part. The first electric field and the second electric field cross at right angles within the plasma generating member or the gas floating member. The radical atmosphere is formed within the plasma generating member or the gas floating member by the first electric field and the second electric field.

摘要翻译： 目的：提供一种产生气体等离子体的方法和装置，产生等离子体的气体组成以及使用其的半导体装置的制造方法，以通过提高生成效率和减少等离子体产生过程中的产生周期来提高生产率 使用远程方法。 构成：通过从电源单元（45）提供的RF电流在等离子体产生构件或气体浮动构件（43）处产生第一电场（48a）。 通过主磁场形成部和辅助磁场形成部在等离子体产生部件或气体浮动部件产生第二电场（48b）。 第一电场和第二电场在等离子体产生构件或气体浮动构件内以直角交叉。 通过第一电场和第二电场在等离子体产生部件或气体浮动部件内形成自由基气氛。

公开(公告)号：KR100445631B1

公开(公告)日：2004-08-25

申请号：KR1020010041917

申请日：2001-07-12

申请人： 삼성전자주식회사

发明人： 양윤식 ,  김진만 ,  민영민 ,  조창현

IPC分类号： H01L21/02

CPC分类号： H01L21/67253 ,  C23C14/566 ,  F15B11/042 ,  F15B11/044 ,  F15B2211/30525 ,  F15B2211/3138 ,  F15B2211/327 ,  F15B2211/40515 ,  F15B2211/41527 ,  F15B2211/455 ,  F15B2211/46 ,  F15B2211/7053 ,  F15B2211/75 ,  H01L21/67017 ,  Y10S414/139

摘要： An input/output valve switching apparatus of a semiconductor manufacturing system minimizes a vibration set up while operating an input/output valve for opening and closing a wafer-transfer passage that connects chambers of the system. The switching apparatus includes a valve actuator having a close port and an open port, a first fluid line connected to the close port, a second fluid line connected to the open port, first flow regulators installed in the first and second fluid lines, respectively, to regulate the flow rate of fluid, and second fluid flow regulators installed in the first and second fluid lines to regulate the flow rate of the fluid that has passed. The second fluid flow regulators can prevent a rapid introduction of the fluid into the actuator.

摘要翻译： 半导体制造系统的输入/输出阀切换设备使在操作用于打开和关闭连接系统的腔室的晶片传送通道的输入/输出阀时建立的振动最小化。 开关装置包括具有关闭端口和开放端口的阀门致动器，连接到关闭端口的第一流体管线，连接到开放端口的第二流体管线，分别安装在第一和第二流体管线中的第一流量调节器， 以调节流体的流量，以及安装在第一和第二流体管线中的第二流体流量调节器，以调节已经流过的流体的流量。 第二流体流量调节器可防止流体快速引入致动器。

公开(公告)号：KR1020030065709A

公开(公告)日：2003-08-09

申请号：KR1020020005441

申请日：2002-01-30

申请人： 삼성전자주식회사

发明人： 김석한 ,  민영민 ,  김남규 ,  박성룡

IPC分类号： H01L21/3065

摘要： PURPOSE: An etching apparatus is provided to minimize the generation of particles by preventing the damage of a through-hole for reaction gas. CONSTITUTION: An etching apparatus includes a chamber, a gas supply portion(22), and a base material(26). The chamber is used for etching a processing target by using plasma. The gas supply portion is formed with a metallic material. The gas supply portion has a through-hole(24) to supply a reaction gas to the chamber. The base material is formed with a plastic material and arranged on a wall of the through-hole. The base material is used for preventing the damage of the wall of the through-hole. The metal material includes aluminum. The plastic material includes an engineering plastic material. The processing target is formed with a photoresist layer.

摘要翻译： 目的：提供一种蚀刻装置，通过防止反应气体通孔的损坏来最小化颗粒的产生。 构成：蚀刻装置包括室，气体供应部分（22）和基材（26）。 该室用于通过使用等离子体来蚀刻加工靶。 气体供给部分由金属材料形成。 气体供给部具有用于向室供给反应气体的通孔（24）。 基材由塑料材料形成，并布置在通孔的壁上。 基材用于防止通孔壁的损坏。 金属材料包括铝。 塑料材料包括工程塑料材料。 处理对象由光致抗蚀剂层形成。