摘要:
The present invention relates to a linear light source generating device, a lenticular system used in the linear light source generating device, and an exposure apparatus having the linear light source generating device. The present invention also relates to a method of manufacturing a fine linear light source. The linear light source generating device according to the present invention is made by using a property of a linear light source owned by a lenticular. In order to implement a nano-sized linear light source efficiently, a lenticular system used in the linear light source generating device is utilized in the present invention. Also, the present invention adopts the linear light source generating device to an exposure apparatus field so as to configure an exposure apparatus having the linear light source generating device. According to the present invention, the linear light source generating device is composed of a light source and a lenticular system. Preferably, the light source uniformly illuminates the lenticular system, and it is desired for the light source to illuminate an overall surface of the lenticular system at a uniform intensity. In an ideal embodiment, the light emitted from the light source is guided perpendicularly downwards after passing the linear light source generating device. To this end, a perpendicular light lenticular is used.
摘要:
An exposure method and apparatus for simultaneously transferring patterns with various pitches with high resolution. On the pupil surface of an illumination system, nine areas are set. The nine areas are a first area (28) including the optical axis (BX), four second areas (29A to 29D) each smaller than the first area and arranged along a first circumference (32A) surrounding the first area (28), and four third areas (30A to 30D) each smaller than the first area and arranged along a second circumference (32B) surrounding the first circumference (32A) and arranged along a second circumference. The distribution of intensity of light over the pupil surface is so set that the intensities of light over the nine areas are approximately equal to one another, and the intensity of light over the other area is smaller than those over the nine areas. This distribution of intensity of light is set using a diffraction optical element or a diaphragm.
摘要:
PURPOSE: A semiconductor exposing apparatus is provided to efficiently cool a UV LED by discharging heat from the UV LED to the outside of a housing part using a first heat discharge pipe and a second heat discharge pipe. CONSTITUTION: An optical fiber(140) is inserted into a housing part. A heat discharging unit(150) is formed in the housing part to be arranged on the upper side of the UV LED and includes a first heat discharge pipe(151) and a second heat discharge pipe(152). The first heat discharge pipe is arranged on the upper side of the UV LED. The second heat discharge pipe is connected to the first heat discharge pipe.
摘要:
PURPOSE: A method for manufacturing a parallel probe of a plasma monic optical device is provided to manufacture a plurality of probe modules on a wafer at the same time, thereby reducing manufacturing costs. CONSTITUTION: A plurality of probe modules(110) is arranged on a substrate(101). The probe module is composed of a probe tip(120) and a spring. The spring is located on the outer circumference of the probe tip. A thin metal film(122) is coated on the probe tip. A nano aperture(125) is placed on the thin metal film. A protective layer(127) is formed on the probe tip to protect the contact surface of the probe tip.
摘要:
PURPOSE: A method for manufacturing a metallic electrode pattern using X-ray is provide to uniformly reach bottom contacting a substrate and to form a metallic electrode pattern on the substrate. CONSTITUTION: A method for manufacturing a metallic electrode pattern comprises: a step of coating photosensitive metallic paste on a substrate and drying to form a coat(S110); a step of arranging X-ray mask and irradiating X-ray(S120); a step of developing the coat to form electrode pattern(S130); and a step of firing the electrode pattern to form sintered electrode pattern(S140). The wavelength of X-ray is 0.01-10 nm. The X-ray irradiated using X-ray tube.