-
1.发明授权公开(公告)号：US11227809B2
公开(公告)日：2022-01-18
申请号：US15457736
申请日：2017-03-13
发明人： See Chian Lim , Teck Tiong Tan , Yung Kuan Hsiao , Ching Meng Fang , Yoke Hor Phua , Bartholomew Liao
IPC分类号： H01L21/56 , H01L23/31 , H01L23/00 , H01L23/29 , H01L23/14 , H01L23/498 , H01L23/538 , H01L21/768 , H01L23/15
摘要： A semiconductor device has a plurality of semiconductor die. A first prefabricated insulating film is disposed over the semiconductor die. A conductive layer is formed over the first prefabricated insulating film. An interconnect structure is formed over the semiconductor die and first prefabricated insulating film. The first prefabricated insulating film is laminated over the semiconductor die. The first prefabricated insulating film includes glass cloth, glass fiber, or glass fillers. The semiconductor die is embedded within the first prefabricated insulating film with the first prefabricated insulating film covering first and side surfaces of the semiconductor die. The interconnect structure is formed over a second surface of the semiconductor die opposite the first surface. A portion of the first prefabricated insulating film is removed after disposing the first prefabricated insulating film over the semiconductor die. A second prefabricated insulating film is disposed over the first prefabricated insulating film.
-
公开(公告)号：US10607946B2
公开(公告)日：2020-03-31
申请号：US15584697
申请日：2017-05-02
发明人： Yaojian Lin , Jianmin Fang , Xia Feng , Kang Chen
IPC分类号： H01L23/00 , H01L23/31 , H01L21/56 , H01L25/10 , H01L25/00 , H01L23/498 , H01L23/538 , H01L21/683 , H01L21/48
摘要： A semiconductor device has a first encapsulant deposited over a first carrier. A plurality of conductive vias is formed through the first encapsulant to provide an interconnect substrate. A first semiconductor die is mounted over a second carrier. The interconnect substrate is mounted over the second carrier adjacent to the first semiconductor die. A second semiconductor die is mounted over the second carrier adjacent to the interconnect substrate. A second encapsulant is deposited over the first and second semiconductor die, interconnect substrate, and second carrier. A first interconnect structure is formed over a first surface of the second encapsulant and electrically connected to the conductive vias. A second interconnect structure is formed over a second surface of the second encapsulant and electrically connected to the conductive vias to make the Fo-WLCSP stackable. Additional semiconductor die can be mounted over the first and second semiconductor die in a PoP arrangement.
-
3.发明授权公开(公告)号：US11257729B2
公开(公告)日：2022-02-22
申请号：US16558135
申请日：2019-09-01
摘要： A semiconductor device has a semiconductor die and an encapsulant around the semiconductor die. A fan-in interconnect structure is formed over the semiconductor die while leaving the encapsulant devoid of the interconnect structure. The fan-in interconnect structure includes an insulating layer and a conductive layer formed over the semiconductor die. The conductive layer remains within a footprint of the semiconductor die. A portion of encapsulant is removed from over the semiconductor die. A backside protection layer is formed over a non-active surface of the semiconductor die after depositing the encapsulant. The backside protection layer is formed by screen printing or lamination. The backside protection layer includes an opaque, transparent, or translucent material. The backside protection layer is marked for alignment using a laser. A reconstituted panel including the semiconductor die is singulated through the encapsulant to leave encapsulant disposed over a sidewall of the semiconductor die.
-
公开(公告)号：US11127668B2
公开(公告)日：2021-09-21
申请号：US16570049
申请日：2019-09-13
IPC分类号： H01L21/56 , H01L23/31 , H01L23/538 , H01L23/498 , H01L23/00 , H01L25/10
摘要： A semiconductor device comprises a first semiconductor package including a conductive layer. A substrate including an interconnect structure is disposed over the conductive layer. The interconnect structure of the substrate with the conductive layer of the first semiconductor package are self-aligned. A plurality of openings is formed in the substrate. An adhesive is disposed between the substrate and the first semiconductor package and in the openings of the substrate. A redistribution layer (RDL) is formed over the first semiconductor package opposite the substrate. A pitch of the substrate is different from a pitch of the RDL. The adhesive extends to the interconnect structure of the substrate. A second semiconductor package is disposed over the substrate and the first semiconductor package.
-
公开(公告)号：US10998248B2
公开(公告)日：2021-05-04
申请号：US15068290
申请日：2016-03-11
发明人： Reza A. Pagaila , Yaojian Lin , Jun Mo Koo
IPC分类号： H01L23/31 , H01L21/56 , H01L23/498 , H01L23/538 , H01L23/00
摘要： A semiconductor wafer contains a plurality of semiconductor die each having a plurality of contact pads. A sacrificial adhesive is deposited over the contact pads. Alternatively, the sacrificial adhesive is deposited over the carrier. An underfill material can be formed between the contact pads. The semiconductor wafer is singulated to separate the semiconductor die. The semiconductor die is mounted to a temporary carrier such that the sacrificial adhesive is disposed between the contact pads and temporary carrier. An encapsulant is deposited over the semiconductor die and carrier. The carrier and sacrificial adhesive is removed to leave a via over the contact pads. An interconnect structure is formed over the encapsulant. The interconnect structure includes a conductive layer which extends into the via for electrical connection to the contact pads. The semiconductor die is offset from the interconnect structure by a height of the sacrificial adhesive.
-
公开(公告)号：USRE48111E1
公开(公告)日：2020-07-21
申请号：US15473447
申请日：2017-03-29
IPC分类号： H01L21/00 , H01L25/00 , H01L21/56 , H01L21/683 , H01L23/31 , H01L23/498 , H01L23/538 , H01L23/00 , H01L25/10 , H05K1/18 , H05K3/00 , H01L25/03 , H01L25/065 , H01L25/16 , H01L21/48 , H01L23/29 , H01L23/544
摘要： A semiconductor device has a first semiconductor die mounted over a carrier. An interposer frame has an opening in the interposer frame and a plurality of conductive pillars formed over the interposer frame. The interposer is mounted over the carrier and first die with the conductive pillars disposed around the die. A cavity can be formed in the interposer frame to contain a portion of the first die. An encapsulant is deposited through the opening in the interposer frame over the carrier and first die. Alternatively, the encapsulant is deposited over the carrier and first die and the interposer frame is pressed against the encapsulant. Excess encapsulant exits through the opening in the interposer frame. The carrier is removed. An interconnect structure is formed over the encapsulant and first die. A second semiconductor die can be mounted over the first die or over the interposer frame.
-
公开(公告)号：US10916482B2
公开(公告)日：2021-02-09
申请号：US13937952
申请日：2013-07-09
发明人： Yoke Hor Phua , Yung Kuan Hsiao
IPC分类号： H01L23/00 , H01L23/31 , H01L21/66 , H01L21/56 , H01L21/683
摘要： A semiconductor wafer has a plurality of semiconductor die distributed over a surface area. The semiconductor die are singulated from the semiconductor wafer. The semiconductor die are mounted to a carrier to form a reconstituted semiconductor wafer. The carrier has a surface area 10-50% larger than the surface area of the semiconductor wafer. The number of semiconductor die mounted to the carrier is greater than a number of semiconductor die singulated from the semiconductor wafer. The reconstituted wafer is mounted within a chase mold. The chase mold is closed with the semiconductor die disposed within a cavity of the chase mold. An encapsulant is dispersed around the semiconductor die within the cavity under temperature and pressure. The encapsulant can be injected into the cavity of the chase mold. The reconstituted wafer is removed from the chase mold. An interconnect structure is formed over the reconstituted wafer.
-
公开(公告)号：US10903183B2
公开(公告)日：2021-01-26
申请号：US14466923
申请日：2014-08-22
发明人： HeeJo Chi , NamJu Cho , HanGil Shin
IPC分类号： H01L23/00 , H01L23/538 , H01L23/498 , H01L21/48 , H01L23/31 , H01L23/552 , H01L25/16
摘要： A semiconductor device has a leadframe with a plurality of bodies extending from the base plate. A first semiconductor die is mounted to the base plate of the leadframe between the bodies. An encapsulant is deposited over the first semiconductor die and base plate and around the bodies of the leadframe. A portion of the encapsulant over the bodies of the leadframe is removed to form first openings in the encapsulant that expose the bodies. An interconnect structure is formed over the encapsulant and extending into the first openings to the bodies of the leadframe. The leadframe and bodies are removed to form second openings in the encapsulant corresponding to space previously occupied by the bodies to expose the interconnect structure. A second semiconductor die is mounted over the first semiconductor die with bumps extending into the second openings of the encapsulant to electrically connect to the interconnect structure.
-
公开(公告)号：US10665534B2
公开(公告)日：2020-05-26
申请号：US15705543
申请日：2017-09-15
发明人： KyungHoon Lee , SangMi Park , KyoungIl Huh , DaeSik Choi
IPC分类号： H01L23/498 , H01L25/065 , H01L21/56 , H01L25/00 , H01L23/00 , H01L23/36 , H01L23/31
摘要： A semiconductor device includes a semiconductor wafer including a plurality of first semiconductor die. An opening is formed partially through the semiconductor wafer. A plurality of second semiconductor die is disposed over a first surface of the semiconductor wafer. An encapsulant is disposed over the semiconductor wafer and into the opening leaving a second surface of the semiconductor wafer exposed. A portion of the second surface of the semiconductor wafer is removed to separate the first semiconductor die. An interconnect structure is formed over the second semiconductor die and encapsulant. A thermal interface material is deposited over the second surface of the first semiconductor die. A heat spreader is disposed over the thermal interface material. An insulating layer is formed over the first surface of the semiconductor wafer. A vertical interconnect structure is formed around the first semiconductor die. Conductive vias are formed through the first semiconductor die.
-
10.发明申请公开(公告)号：US20220093479A1
公开(公告)日：2022-03-24
申请号：US17457974
申请日：2021-12-07
发明人： See Chian Lim , Teck Tiong Tan , Yung Kuan Hsiao , Ching Meng Fang , Yoke Hor Phua , Bartholomew Liao
IPC分类号： H01L23/31 , H01L23/00 , H01L23/29 , H01L23/14 , H01L23/498 , H01L23/538 , H01L21/56 , H01L21/768 , H01L23/15
摘要： A semiconductor device has a plurality of semiconductor die. A first prefabricated insulating film is disposed over the semiconductor die. A conductive layer is formed over the first prefabricated insulating film. An interconnect structure is formed over the semiconductor die and first prefabricated insulating film. The first prefabricated insulating film is laminated over the semiconductor die. The first prefabricated insulating film includes glass cloth, glass fiber, or glass fillers. The semiconductor die is embedded within the first prefabricated insulating film with the first prefabricated insulating film covering first and side surfaces of the semiconductor die. The interconnect structure is formed over a second surface of the semiconductor die opposite the first surface. A portion of the first prefabricated insulating film is removed after disposing the first prefabricated insulating film over the semiconductor die. A second prefabricated insulating film is disposed over the first prefabricated insulating film.
-
-
-
-
-
-
-
-
-
搜索结果
13 条记录 (耗时 0.016 秒)
