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1.发明申请公开(公告)号：US20090075449A1
公开(公告)日：2009-03-19
申请号：US12276507
申请日：2008-11-24
IPC分类号： H01L21/20
CPC分类号： H01L27/0688 , H01L23/5223 , H01L2924/0002 , H01L2924/00
摘要： The present invention provides an integrated high voltage capacitor, a method of manufacture therefore, and an integrated circuit chip including the same. The integrated high voltage capacitor, among other features, includes a first capacitor plate (120) located over or in a semiconductor substrate (105), and an insulator (130) located over the first capacitor plate (120), at least a portion of the insulator (130) comprising an interlevel dielectric layer (135, 138, 143, or 148). The integrated high voltage capacitor further includes capacitance uniformity structures (910) located at least partially within the insulator (130) and a second capacitor plate (160) located over the insulator (130).
摘要翻译： 本发明提供了一种集成的高压电容器，因此制造方法和包括其的集成电路芯片。 集成的高压电容器以及其它特征包括位于半导体衬底（105）上方或半导体衬底（105）中的第一电容器板（120）和位于第一电容器板（120）上方的绝缘体（130），至少一部分 绝缘体（130）包括层间介电层（135,138,143或148）。 集成高压电容器还包括至少部分位于绝缘体（130）内的电容均匀性结构（910）和位于绝缘体（130）上方的第二电容器板（160）。
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2.发明授权公开(公告)号：US07470991B2
公开(公告)日：2008-12-30
申请号：US11250047
申请日：2005-10-13
CPC分类号： H01L27/0688 , H01L23/5223 , H01L2924/0002 , H01L2924/00
摘要： The present invention provides an integrated high voltage capacitor, a method of manufacture therefore, and an integrated circuit chip including the same. The integrated high voltage capacitor, among other features, includes a first capacitor plate (120) located over or in a semiconductor substrate (105), and an insulator (130) located over the first capacitor plate (120), at least a portion of the insulator (130) comprising an interlevel dielectric layer (135, 138, 143, or 148). The integrated high voltage capacitor further includes capacitance uniformity structures (910) located at least partially within the insulator (130) and a second capacitor plate (160) located over the insulator (130).
摘要翻译： 本发明提供了一种集成的高压电容器，因此制造方法和包括其的集成电路芯片。 集成的高压电容器以及其它特征包括位于半导体衬底（105）上方或半导体衬底（105）中的第一电容器板（120）和位于第一电容器板（120）上方的绝缘体（130），至少一部分 绝缘体（130）包括层间介电层（135,138,143或148）。 集成高压电容器还包括至少部分位于绝缘体（130）内的电容均匀性结构（910）和位于绝缘体（130）上方的第二电容器板（160）。
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3.发明申请公开(公告)号：US20120142164A1
公开(公告)日：2012-06-07
申请号：US13396159
申请日：2012-02-14
IPC分类号： H01L21/02
CPC分类号： H01L27/0688 , H01L23/5223 , H01L2924/0002 , H01L2924/00
摘要： The present invention provides an integrated high voltage capacitor, a method of manufacture therefore, and an integrated circuit chip including the same. The integrated high voltage capacitor, among other features, includes a first capacitor plate (120) located over or in a semiconductor substrate (105), and an insulator (130) located over the first capacitor plate (120), at least a portion of the insulator (130) comprising an interlevel dielectric layer (135, 138, 143, or 148). The integrated high voltage capacitor further includes capacitance uniformity structures (910) located at least partially within the insulator (130) and a second capacitor plate (160) located over the insulator (130).
摘要翻译： 本发明提供了一种集成的高压电容器，因此制造方法和包括其的集成电路芯片。 集成的高压电容器以及其它特征包括位于半导体衬底（105）上方或半导体衬底（105）中的第一电容器板（120）和位于第一电容器板（120）上方的绝缘体（130），至少一部分 绝缘体（130）包括层间介电层（135,138,143或148）。 集成高压电容器还包括至少部分位于绝缘体（130）内的电容均匀性结构（910）和位于绝缘体（130）上方的第二电容器板（160）。
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4.发明授权公开(公告)号：US08273623B2
公开(公告)日：2012-09-25
申请号：US13396159
申请日：2012-02-14
IPC分类号： H01L21/8242
CPC分类号： H01L27/0688 , H01L23/5223 , H01L2924/0002 , H01L2924/00
摘要： The present invention provides an integrated high voltage capacitor, a method of manufacture therefore, and an integrated circuit chip including the same. The integrated high voltage capacitor, among other features, includes a first capacitor plate (120) located over or in a semiconductor substrate (105), and an insulator (130) located over the first capacitor plate (120), at least a portion of the insulator (130) comprising an interlevel dielectric layer (135, 138, 143, or 148). The integrated high voltage capacitor further includes capacitance uniformity structures (910) located at least partially within the insulator (130) and a second capacitor plate (160) located over the insulator (130).
摘要翻译： 本发明提供了一种集成的高压电容器，因此制造方法和包括其的集成电路芯片。 集成的高压电容器以及其它特征包括位于半导体衬底（105）上方或半导体衬底（105）中的第一电容器板（120）和位于第一电容器板（120）上方的绝缘体（130），至少一部分 绝缘体（130）包括层间介电层（135,138,143或148）。 集成高压电容器还包括至少部分位于绝缘体（130）内的电容均匀性结构（910）和位于绝缘体（130）上方的第二电容器板（160）。
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公开(公告)号：US08114731B2
公开(公告)日：2012-02-14
申请号：US12276507
申请日：2008-11-24
IPC分类号： H01L21/8244
CPC分类号： H01L27/0688 , H01L23/5223 , H01L2924/0002 , H01L2924/00
摘要： The present invention provides an integrated high voltage capacitor, a method of manufacture therefore, and an integrated circuit chip including the same. The integrated high voltage capacitor, among other features, includes a first capacitor plate (120) located over or in a semiconductor substrate (105), and an insulator (130) located over the first capacitor plate (120), at least a portion of the insulator (130) comprising an interlevel dielectric layer (135, 138, 143, or 148). The integrated high voltage capacitor further includes capacitance uniformity structures (910) located at least partially within the insulator (130) and a second capacitor plate (160) located over the insulator (130).
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6.发明授权公开(公告)号：US07413947B2
公开(公告)日：2008-08-19
申请号：US11333222
申请日：2006-01-17
IPC分类号： H01L21/8234
CPC分类号： H01L28/40 , H01L21/02118 , H01L21/02131 , H01L21/02164 , H01L21/02167 , H01L21/0217 , H01L21/312 , H01L27/0629 , H01L27/0805 , H01L29/94
摘要： The present invention provides an integrated high voltage capacitor, a method of manufacture therefore, and an integrated circuit chip including the same. The integrated high voltage capacitor, among other features, includes a first capacitor plate (120) located over or in a substrate (105), and an insulator (130) located over the first capacitor plate (120), at least a portion of the insulator (130) comprising an interlevel dielectric layer (135, 138, 143, or 148). The integrated high voltage capacitor further includes a second capacitor plate (160) located over the insulator (130) and a top-level dielectric layer (199) located at least partially along a sidewall of the second capacitor plate (160).
摘要翻译： 本发明提供了一种集成的高压电容器，因此制造方法和包括其的集成电路芯片。 集成的高压电容器以及其他特征包括位于基板（105）上方或基板（105）上的第一电容器板（120）和位于第一电容器板（120）上方的绝缘体（130），至少一部分 绝缘体（130）包括层间电介质层（135,138,143或148）。 集成的高压电容器还包括位于绝缘体（130）上的第二电容器板（160）和至少部分地沿着第二电容器板（160）的侧壁定位的顶级介质层（199）。
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