公开(公告)号：US20050082257A1

公开(公告)日：2005-04-21

申请号：US10487745

申请日：2002-09-09

Applicant: Gust Bierings ,  Bjarni Bjarnason ,  Goran Frennesson ,  Jenny Sjoberg

Inventor： Gust Bierings ,  Bjarni Bjarnason ,  Goran Frennesson ,  Jenny Sjoberg

IPC: C25F3/02 ,  C25F7/00 ,  H05K3/07 ,  C23F1/00

CPC classification number: H05K3/07 ,  C25F3/02 ,  C25F7/00

Abstract: Etching of copper on a card is achieved by applying an electrical voltage between a cathode (102) and the card (42), the card (42) thereby forming an anode. The cathode (102) and the card (42) are immersed in an electrolyte comprising a first component, which may be reduced from a first state in the form of an ion having a metal atom with a first positive oxidation number to a second state in the form of an ion having said metal atom with a second positive oxidation number, which is less than said first positive oxidation number. A first redox potential in the electrolyte for reduction from the first to the second state is larger than a second redox potential in the electrolyte for reduction of divalent copper ions to metallic copper. During the etching metallic copper on the card is oxidised and transferred into positively charged copper ions while the first component is reduced from its first state to its second state. The quality of the etched structures on the card is improved since no metallic copper is precipitated on the cathode.

Abstract translation: 通过在阴极（102）和卡（42）之间施加电压，卡（42）从而形成阳极来实现卡上铜的蚀刻。 将阴极（102）和卡（42）浸入包含第一组分的电解质中，该第一组分可以从具有第一正氧化数的金属原子的离子形式的第一状态还原为第二状态 具有第二正氧化数的具有所述金属原子的离子的形式，其小于所述第一正氧化数。 用于从第一状态到第二状态还原的电解质中的第一氧化还原电位大于用于还原二价铜离子至金属铜的电解质中的第二氧化还原电位。 在蚀刻期间，卡上的金属铜被氧化并转移到带正电荷的铜离子中，同时第一组分从其第一状态减少到其第二状态。 卡上蚀刻结构的质量得到改善，因为阴极上没有金属铜沉淀。

公开(公告)号：US06905628B2

公开(公告)日：2005-06-14

申请号：US09956082

申请日：2001-09-20

Applicant: Bjarni Bjarnason ,  Per Petersson

Inventor： Bjarni Bjarnason ,  Per Petersson

IPC: C23F1/00 ,  C23F20060101 ,  C23F1/02 ,  C25F3/14 ,  H05K3/06

CPC classification number: C23F1/02 ,  C25F3/14 ,  H05K3/067

Abstract: In etching, an etchant (4) for etching of a substrate (1) is applied in a given pattern. Before etching, a resist layer (2) is applied to the substrate (1) in said pattern to define at least one exposed portion (3) of the substrate (1). In order to minimize under etching, a passivating substance is arranged, before etching, on the substrate (1) to also define said pattern, i.e., at the periphery of the exposed portion (3). The passivating substance is such as to form, during etching, an etch-protecting compound at the periphery.

Abstract translation: 在蚀刻中，以给定的图案施加蚀刻衬底（1）的蚀刻剂（4）。 在蚀刻之前，以所述图案将抗蚀剂层（2）施加到基板（1）以限定基板（1）的至少一个暴露部分（3）。 为了在蚀刻下最小化，在蚀刻之前，在基板（1）上布置钝化物质，还限定所述图案，即在暴露部分（3）的外围。 钝化物质在蚀刻期间形成在周边的蚀刻保护化合物。

公开(公告)号：US07767074B2

公开(公告)日：2010-08-03

申请号：US10487745

申请日：2002-09-09

Applicant: Gust Bierings ,  Bjarni Bjarnason ,  Göran Frennesson ,  Jenny Sjöberg

Inventor： Gust Bierings ,  Bjarni Bjarnason ,  Göran Frennesson ,  Jenny Sjöberg

IPC: C25F3/04

CPC classification number: H05K3/07 ,  C25F3/02 ,  C25F7/00

Abstract: Etching of copper on a card is achieved by applying an electrical voltage between a cathode (102) and the card (42), the card (42) thereby forming an anode. The cathode (102) and the card (42) are immersed in an electrolyte comprising a first component, which may be reduced from a first state in the form of an ion having a metal atom with a first positive oxidation number to a second state in the form of an ion having said metal atom with a second positive oxidation number, which is less than said first positive oxidation number. A first redox potential in the electrolyte for reduction from the first to the second state is larger than a second redox potential in the electrolyte for reduction of divalent copper ions to metallic copper. During the etching metallic copper on the card is oxidized and transferred into positively charged copper ions while the first component is reduced from its first state to its second state. The quality of the etched structures on the card is improved since no metallic copper is precipitated on the cathode.

Abstract translation: 通过在阴极（102）和卡（42）之间施加电压，卡（42）从而形成阳极来实现卡上铜的蚀刻。 将阴极（102）和卡（42）浸入包含第一组分的电解质中，该第一组分可以从具有第一正氧化数的金属原子的离子形式的第一状态还原为第二状态 具有第二正氧化数的具有所述金属原子的离子的形式，其小于所述第一正氧化数。 用于从第一状态到第二状态还原的电解质中的第一氧化还原电位大于用于还原二价铜离子至金属铜的电解质中的第二氧化还原电位。 在蚀刻期间，卡片上的金属铜被氧化并转移到带正电荷的铜离子中，同时第一组分从第一状态降低到其第二状态。 卡上蚀刻结构的质量得到改善，因为阴极上没有金属铜沉淀。

公开(公告)号：US06656341B2

公开(公告)日：2003-12-02

申请号：US09954014

申请日：2001-09-18

Applicant: Per Petersson ,  Mikael Gustavsson ,  Jenny Sjöberg ,  Bin Xie ,  Bjarni Bjarnason ,  Gust Bierings ,  Göran Frennesson

Inventor： Per Petersson ,  Mikael Gustavsson ,  Jenny Sjöberg ,  Bin Xie ,  Bjarni Bjarnason ,  Gust Bierings ,  Göran Frennesson

IPC: C25F300

CPC classification number: C25F3/02 ,  H01L21/3063 ,  H01L21/3081 ,  H01L21/3085

Abstract: In a method of etching a substrate having a surface layer of conductive material, a circuit pattern is transferred to the surface layer in a central surface area portion of the substrate by electrochemical etching. To prevent excessive current densities from forming at the periphery of the central surface area portion during the etching step, a frame adapted to attract electrical field is provided adjacent to the central surface area portion. The frame can be part of a separate frame element which is placed on the substrate before the etching step, or be incorporated in a resist coating on the substrate. The frame can be transferred to the resist coating by any suitable means, for example by photolithographic exposure through a mask with a suitable frame pattern. Alternatively, the frame can be incorporated in a prefabricated substrate element, to which the circuit pattern is transferred in the etching step.

Abstract translation: 在蚀刻具有导电材料的表面层的基板的方法中，通过电化学蚀刻将电路图案转移到基板的中心表面区域部分中的表面层。 为了防止在蚀刻步骤期间在中心表面区域的周围形成过大的电流密度，在中央表面区域附近设置适于吸引电场的框架。 框架可以是在蚀刻步骤之前放置在基板上的单独的框架元件的一部分，或者被结合到基板上的抗蚀剂涂层中。 可以通过任何合适的方式将框架转移到抗蚀剂涂层，例如通过具有适当框架图案的掩模的光刻曝光。 或者，框架可以结合在预制的衬底元件中，在蚀刻步骤中电路图案被转移到衬底元件。