Abstract:
An electrode for forming an electrochemical cell with a substrate and a method of forming said electrode. The electrode comprises a carrier provided with an insulating layer which is patterned at a front side. Conducting material in an electrode layer is applied in the cavities of the patterned insulating layer and in contact with the carrier. A connection layer is applied at the backside of the carrier and in contact with the carrier. The periphery of the electrode is covered by the insulating material.
Abstract:
A master electrode is arranged on substrate and comprises a pattern layer at least partly of an insulating material and a first surface provided with a plurality of cavities in which a conducting material is arranged, said electrode conductor being electrically connected to at least one electrode current supply; said substrate comprising a surface contacting or adjacent said first surface and having a conductor arranged thereon, said substrate conductor being electrically connected to the at least one current supply; whereby a plurality of electrochemical cells are formed delimited by said cavities, said substrate conductor and said electrode conductor, said cells comprising an electrolyte; wherein an electrode resistance between said electrode conductor and said electrode current supply and a substrate resistance between said substrate conductor and said substrate current supply provide a predetermined current density in each electrochemical cell.
Abstract:
The present invention concerns an electrochemical pattern replication method, ECPR, and a construction of a conductive electrode for production of applications involving micro and nano structures. An etching or plating pattern, which is defined by a conductive electrode, a master electrode, is replicated on an electrically conductive material, a substrate. The master electrode is put in close contact with the substrate and the etching/plating pattern is directly transferred onto the substrate by using a contact etching/plating process. The contact etching/plating process is performed in local etching/plating cells, that are formed in closed or open cavities between the master electrode and the substrate.
Abstract:
Systems and methods include depositing one or more materials on a voltage switchable dielectric material. In certain aspects, a voltage switchable dielectric material is disposed on a conductive backplane. In some embodiments, a voltage switchable dielectric material includes regions having different characteristic voltages associated with deposition thereon. Some embodiments include masking, and may include the use of a removable contact mask. Certain embodiments include electrografting. Some embodiments include an intermediate layer disposed between two layers.
Abstract:
A device which is suitable for electrochemically processing an object comprises at least an electrolyte-containing chamber, means for supporting the object to be processed in the chamber, a counter electrode disposed in the chamber as well as means for applying an electrical potential difference between the object to be processed and the counter electrode. The device furthermore comprises at least one holder and at least one rod-shaped coelectrode supported by the holder, which rod-shaped coelectrode extends towards the object and which in use has a polarity opposite that of the counter electrode.
Abstract:
An electrode for forming an electrochemical cell with a substrate and a method of forming said electrode. The electrode comprises a carrier (1) provided with an insulating layer (7) which is patterned at a front side. Conducting material in an electrode layer (4) is applied in the cavities of the patterned insulating layer and in contact with the carrier. An connection layer (5) is applied at the backside of the carrier and in contact with the carrier. The periphery of the electrode is covered by the insulating material.
Abstract:
Method of forming a multilayer structure by electroetching or electroplating on a substrate. A seed layer is arranged on the substrate and a master electrode is applied thereto. The master electrode has a pattern layer forming multiple electrochemical cells with the substrate. A voltage is applied for etching the seed layer or applying a plating material to the seed layer. A dielectric material (9) is arranged between the structures (8) thus formed. The dielectric layer is planarized for uncovering the structure below and another structure layer is formed on top of the first. Alternatively, the dielectric layer is applied with a thickness two layers and the structure below is accessed by selective etching of the dielectric layer for selectively uncovering the top surface of the structure below. Multiple structure layer may also be formed in one step.
Abstract:
A thin-film assembly (1) including a substrate (2) and at least one electronic thin-film component (8) applied on the substrate by thin-film technology, wherein a base electrode (4) is provided on the substrate, on which base electrode thin-film layers (21) forming part of the thin-film component are arranged together with an upper top electrode (9); the substrate (2) is comprised of a printed circuit board (2) known per se and including an insulation-material base body (3) and a metal coating as the conductor layer (5), wherein the conductor layer (5) forms the base electrode (4) and, to this end, is smoothed at least on the location of the thin-film component (8), and wherein a contact layer (18) is applied by thin-film technology between the smoothed, optionally reinforced, conductor layer (5) and the superimposed thin-film layers (21) of the thin-film component (8), which contact layer is physically or chemically adsorbed on the surface of the base electrode (4).
Abstract:
A method for manufacturing a very low roughness copper foil and an apparatus for manufacturing the copper foil. In the method of the present invention, a pickling process, an electrolytic polishing process and a washing process are successively performed after the copper foil was manufactured. In order to manufacture the very low roughness copper foil, the electrolytic polishing process is accomplished with the copper foil to face a metal cathode plate and supplying a current in order to perform the electrolytic polishing.
Abstract:
Etching of copper on a card is achieved by applying an electrical voltage between a cathode (102) and the card (42), the card (42) thereby forming an anode. The cathode (102) and the card (42) are immersed in an electrolyte comprising a first component, which may be reduced from a first state in the form of an ion having a metal atom with a first positive oxidation number to a second state in the form of an ion having said metal atom with a second positive oxidation number, which is less than said first positive oxidation number. A first redox potential in the electrolyte for reduction from the first to the second state is larger than a second redox potential in the electrolyte for reduction of divalent copper ions to metallic copper. During the etching metallic copper on the card is oxidised and transferred into positively charged copper ions while the first component is reduced from its first state to its second state. The quality of the etched structures on the card is improved since no metallic copper is precipitated on the cathode.