Method and electrode for defining and replicating structures in conducting materials
    3.
    发明授权
    Method and electrode for defining and replicating structures in conducting materials 有权
    用于定义和复制导电材料结构的方法和电极

    公开(公告)号:US07790009B2

    公开(公告)日:2010-09-07

    申请号:US10734223

    申请日:2003-12-15

    Abstract: The present invention concerns an electrochemical pattern replication method, ECPR, and a construction of a conductive electrode for production of applications involving micro and nano structures. An etching or plating pattern, which is defined by a conductive electrode, a master electrode, is replicated on an electrically conductive material, a substrate. The master electrode is put in close contact with the substrate and the etching/plating pattern is directly transferred onto the substrate by using a contact etching/plating process. The contact etching/plating process is performed in local etching/plating cells, that are formed in closed or open cavities between the master electrode and the substrate.

    Abstract translation: 本发明涉及一种电化学图案复制方法,ECPR,以及用于生产涉及微结构和纳米结构的应用的导电电极的结构。 由导电电极,主电极限定的蚀刻或电镀图案被复制在导电材料,基板上。 主电极与衬底紧密接触,并且通过使用接触蚀刻/电镀工艺将蚀刻/电镀图案直接转印到衬底上。 接触蚀刻/电镀工艺在局部蚀刻/电镀电池中进行,其形成在主电极和基板之间的闭合或敞开的空腔中。

    Thin-film assembly and method for producing said assembly
    8.
    发明授权
    Thin-film assembly and method for producing said assembly 有权
    薄膜组装及其制造方法

    公开(公告)号:US07551454B2

    公开(公告)日:2009-06-23

    申请号:US10568563

    申请日:2004-09-09

    Abstract: A thin-film assembly (1) including a substrate (2) and at least one electronic thin-film component (8) applied on the substrate by thin-film technology, wherein a base electrode (4) is provided on the substrate, on which base electrode thin-film layers (21) forming part of the thin-film component are arranged together with an upper top electrode (9); the substrate (2) is comprised of a printed circuit board (2) known per se and including an insulation-material base body (3) and a metal coating as the conductor layer (5), wherein the conductor layer (5) forms the base electrode (4) and, to this end, is smoothed at least on the location of the thin-film component (8), and wherein a contact layer (18) is applied by thin-film technology between the smoothed, optionally reinforced, conductor layer (5) and the superimposed thin-film layers (21) of the thin-film component (8), which contact layer is physically or chemically adsorbed on the surface of the base electrode (4).

    Abstract translation: 一种薄膜组件(1),其包括通过薄膜技术施加在所述基板上的基板(2)和至少一个电子薄膜部件(8),其中在所述基板上设置有基极(4) 形成薄膜部件一部分的基极薄膜层(21)与上部上部电极(9)一起配置; 基板(2)由本身已知的包括绝缘材料基体(3)和作为导体层(5)的金属涂层(5)的印刷电路板(2)组成,其中导体层(5)形成 至少在薄膜组件(8)的位置上平滑基底电极(4),并且为此目的,使薄膜技术上的接触层(18)在平滑的,任选地加强的, 导体层(5)和薄膜部件(8)的叠加薄膜层(21),该接触层物理或化学吸附在基极(4)的表面上。

    Method and apparatus for making very low roughness copper foil
    9.
    发明授权
    Method and apparatus for making very low roughness copper foil 有权
    制造非常低的粗糙度铜箔的方法和装置

    公开(公告)号:US07112271B2

    公开(公告)日:2006-09-26

    申请号:US10722469

    申请日:2003-11-28

    CPC classification number: C25F3/02 H05K3/07 H05K3/383 H05K2201/0355

    Abstract: A method for manufacturing a very low roughness copper foil and an apparatus for manufacturing the copper foil. In the method of the present invention, a pickling process, an electrolytic polishing process and a washing process are successively performed after the copper foil was manufactured. In order to manufacture the very low roughness copper foil, the electrolytic polishing process is accomplished with the copper foil to face a metal cathode plate and supplying a current in order to perform the electrolytic polishing.

    Abstract translation: 制造非常低的粗糙度铜箔的方法和铜箔的制造装置。 在本发明的方法中,在制造铜箔之后依次进行酸洗处理,电解抛光处理和洗涤处理。 为了制造非常低的粗糙度的铜箔,利用铜箔面对金属阴极板并提供电流以进行电解抛光来实现电解抛光工艺。

    Method of etching copper on cards
    10.
    发明申请
    Method of etching copper on cards 失效
    在卡上刻蚀铜的方法

    公开(公告)号:US20050082257A1

    公开(公告)日:2005-04-21

    申请号:US10487745

    申请日:2002-09-09

    CPC classification number: H05K3/07 C25F3/02 C25F7/00

    Abstract: Etching of copper on a card is achieved by applying an electrical voltage between a cathode (102) and the card (42), the card (42) thereby forming an anode. The cathode (102) and the card (42) are immersed in an electrolyte comprising a first component, which may be reduced from a first state in the form of an ion having a metal atom with a first positive oxidation number to a second state in the form of an ion having said metal atom with a second positive oxidation number, which is less than said first positive oxidation number. A first redox potential in the electrolyte for reduction from the first to the second state is larger than a second redox potential in the electrolyte for reduction of divalent copper ions to metallic copper. During the etching metallic copper on the card is oxidised and transferred into positively charged copper ions while the first component is reduced from its first state to its second state. The quality of the etched structures on the card is improved since no metallic copper is precipitated on the cathode.

    Abstract translation: 通过在阴极(102)和卡(42)之间施加电压,卡(42)从而形成阳极来实现卡上铜的蚀刻。 将阴极(102)和卡(42)浸入包含第一组分的电解质中,该第一组分可以从具有第一正氧化数的金属原子的离子形式的第一状态还原为第二状态 具有第二正氧化数的具有所述金属原子的离子的形式,其小于所述第一正氧化数。 用于从第一状态到第二状态还原的电解质中的第一氧化还原电位大于用于还原二价铜离子至金属铜的电解质中的第二氧化还原电位。 在蚀刻期间,卡上的金属铜被氧化并转移到带正电荷的铜离子中,同时第一组分从其第一状态减少到其第二状态。 卡上蚀刻结构的质量得到改善,因为阴极上没有金属铜沉淀。

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