Liquid crystal display with enhanced gate pad protection and method of
manufacturing the same
    1.
    发明授权
    Liquid crystal display with enhanced gate pad protection and method of manufacturing the same 失效
    具有增强型门板保护的液晶显示器及其制造方法

    公开(公告)号:US6163356A

    公开(公告)日:2000-12-19

    申请号:US899600

    申请日:1997-07-24

    CPC分类号: G02F1/13458 G02F1/1345

    摘要: The method of manufacturing a liquid crystal display includes the step of forming, on a substrate, a gate line, at least one gate electrode branching out of the gate line, and a gate pad disposed at an end portion of the gate line. Then, a gate insulating layer is formed over the substrate and on the gate line, the gate electrode and the gate pad, and a dummy gate pad is formed on the gate insulating layer over at least a portion of the periphery of the gate pad. The dummy gate pad prevents etchant used during the fabrication process of the liquid crystal display from penetrating into the periphery of the gate pad.

    摘要翻译: 制造液晶显示器的方法包括在基板上形成栅极线,至少一个分支出栅极线的栅电极以及设置在栅极线的端部的栅极焊盘的步骤。 然后,在栅极绝缘层的至少一部分的栅极焊盘的至少一部分之上,在衬底上,栅极线上形成栅极绝缘层,栅极电极和栅极焊盘,以及伪栅极焊盘。 伪栅极垫防止在液晶显示器的制造过程中使用的蚀刻剂渗透到栅极焊盘的周边。

    Selective etching of a protective layer to form a catalyst layer for an electron-emitting device
    2.
    发明授权
    Selective etching of a protective layer to form a catalyst layer for an electron-emitting device 失效
    选择性蚀刻保护层以形成用于电子发射器件的催化剂层

    公开(公告)号:US06984535B2

    公开(公告)日:2006-01-10

    申请号:US10327529

    申请日:2002-12-20

    IPC分类号: H01L21/302

    摘要: An electron-emitting device including a protective layer that is formed on a catalyst layer to protect the catalyst layer from the deleterious environmental conditions before or during a cathode process. The present invention further includes a half etching process that is adapted to partially remove portions of the protective layer from the catalyst layer to etch the catalyst layer except carbon nano-tube growing portions. Portions of the protective layer still remain on the catalyst layer to protect the catalyst layer from the deleterious conditions from next cathode formation process.

    摘要翻译: 一种电子发射器件,包括形成在催化剂层上以保护催化剂层免受阴极处理之前或期间的有害环境条件的保护层。 本发明还包括半蚀刻工艺,其适于部分地从催化剂层去除保护层的部分以蚀刻除碳纳米管生长部分之外的催化剂层。 保护层的一部分仍然保留在催化剂层上,以保护催化剂层免受下一个阴极形成过程的有害条件的影响。