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公开(公告)号：US08129803B2
公开(公告)日：2012-03-06
申请号：US12804213
申请日：2010-07-16
Applicant: John R. Martin , Timothy J. Brosnihan , Craig Core , Thomas Kieran Nunan , Jason Weigold , Xin Zhang
Inventor： John R. Martin , Timothy J. Brosnihan , Craig Core , Thomas Kieran Nunan , Jason Weigold , Xin Zhang
CPC classification number: H04R3/00 , B81B2201/0235 , B81B2201/0257 , B81C1/00182 , H01L2224/48137 , H01L2224/49109 , H01L2224/73265 , H01L2924/15151 , H04R19/005 , H04R2499/11
Abstract: A micromachined microphone is formed from a silicon or silicon-on-insulator (SOI) wafer. A fixed sensing electrode for the microphone is formed from a top silicon layer of the wafer. Various polysilicon microphone structures are formed above a front side of the top silicon layer by depositing at least one oxide layer, forming the structures, and then removing a portion of the oxide underlying the structures from a back side of the top silicon layer through trenches formed through the top silicon layer. The trenches allow sound waves to reach the diaphragm from the back side of the top silicon layer. In an SOI wafer, a cavity is formed through a bottom silicon layer and an intermediate oxide layer to expose the trenches for both removing the oxide and allowing the sound waves to reach the diaphragm. An inertial sensor may be formed on the same wafer, with various inertial sensor structures formed at substantially the same time and using substantially the same processes as corresponding microphone structures.
Abstract translation: 微机械麦克风由硅或绝缘体上硅（SOI）晶片形成。 用于麦克风的固定感测电极由晶片的顶部硅层形成。 通过沉积形成结构的至少一个氧化物层，然后通过形成的沟槽从顶部硅层的背面去除结构物下面的氧化物的一部分，形成在顶部硅层前侧上的各种多晶硅麦克风结构 通过顶层硅层。 沟槽允许声波从顶部硅层的背面到达隔膜。 在SOI晶片中，通过底部硅层和中间氧化物层形成空腔，以露出沟槽，以去除氧化物并允许声波到达隔膜。 惯性传感器可以形成在相同的晶片上，其中各种惯性传感器结构基本上在同一时间形成并且使用与对应的麦克风结构基本上相同的过程。
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公开(公告)号：US20060237806A1
公开(公告)日：2006-10-26
申请号：US11113925
申请日：2005-04-25
Applicant: John Martin , Timothy Brosnihan , Craig Core , Thomas Kieran Nunan , Jason Weigold , Xin Zhang
Inventor： John Martin , Timothy Brosnihan , Craig Core , Thomas Kieran Nunan , Jason Weigold , Xin Zhang
CPC classification number: H04R3/00 , B81B2201/0235 , B81B2201/0257 , B81C1/00182 , H01L2224/48137 , H01L2224/49109 , H01L2224/73265 , H01L2924/15151 , H04R19/005 , H04R2499/11
Abstract: A micromachined microphone is formed from a silicon or silicon-on-insulator (SOI) wafer. A fixed sensing electrode for the microphone is formed from a top silicon layer of the wafer. Various polysilicon microphone structures are formed above a front side of the top silicon layer by depositing at least one oxide layer, forming the structures, and then removing a portion of the oxide underlying the structures from a back side of the top silicon layer through trenches formed through the top silicon layer. The trenches allow sound waves to reach the diaphragm from the back side of the top silicon layer. In an SOI wafer, a cavity is formed through a bottom silicon layer and an intermediate oxide layer to expose the trenches for both removing the oxide and allowing the sound waves to reach the diaphragm. An inertial sensor may be formed on the same wafer, with various inertial sensor structures formed at substantially the same time and using substantially the same processes as corresponding microphone structures.
Abstract translation: 微机械麦克风由硅或绝缘体上硅（SOI）晶片形成。 用于麦克风的固定感测电极由晶片的顶部硅层形成。 通过沉积形成结构的至少一个氧化物层，然后通过形成的沟槽从顶部硅层的背面去除结构物下面的氧化物的一部分，形成在顶部硅层前侧上的各种多晶硅麦克风结构 通过顶层硅层。 沟槽允许声波从顶部硅层的背面到达隔膜。 在SOI晶片中，通过底部硅层和中间氧化物层形成空腔，以露出沟槽，以去除氧化物并允许声波到达隔膜。 惯性传感器可以形成在相同的晶片上，其中各种惯性传感器结构基本上在同一时间形成并且使用与对应的麦克风结构基本上相同的过程。
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公开(公告)号：US20100285628A1
公开(公告)日：2010-11-11
申请号：US12804213
申请日：2010-07-16
Applicant: John R. Martin , Timothy J. Brosnihan , Craig Core , Thomas Kieran Nunan , Jason Weigold , Xin Zhang
Inventor： John R. Martin , Timothy J. Brosnihan , Craig Core , Thomas Kieran Nunan , Jason Weigold , Xin Zhang
CPC classification number: H04R3/00 , B81B2201/0235 , B81B2201/0257 , B81C1/00182 , H01L2224/48137 , H01L2224/49109 , H01L2224/73265 , H01L2924/15151 , H04R19/005 , H04R2499/11
Abstract: A micromachined microphone is formed from a silicon or silicon-on-insulator (SOI) wafer. A fixed sensing electrode for the microphone is formed from a top silicon layer of the wafer. Various polysilicon microphone structures are formed above a front side of the top silicon layer by depositing at least one oxide layer, forming the structures, and then removing a portion of the oxide underlying the structures from a back side of the top silicon layer through trenches formed through the top silicon layer. The trenches allow sound waves to reach the diaphragm from the back side of the top silicon layer. In an SOI wafer, a cavity is formed through a bottom silicon layer and an intermediate oxide layer to expose the trenches for both removing the oxide and allowing the sound waves to reach the diaphragm. An inertial sensor may be formed on the same wafer, with various inertial sensor structures formed at substantially the same time and using substantially the same processes as corresponding microphone structures.
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公开(公告)号：US07825484B2
公开(公告)日：2010-11-02
申请号：US11113925
申请日：2005-04-25
Applicant: John R. Martin , Timothy J. Brosnihan , Craig Core , Thomas Kieran Nunan , Jason Weigold , Xin Zhang
Inventor： John R. Martin , Timothy J. Brosnihan , Craig Core , Thomas Kieran Nunan , Jason Weigold , Xin Zhang
IPC: H01L29/82
CPC classification number: H04R3/00 , B81B2201/0235 , B81B2201/0257 , B81C1/00182 , H01L2224/48137 , H01L2224/49109 , H01L2224/73265 , H01L2924/15151 , H04R19/005 , H04R2499/11
Abstract: A micromachined microphone is formed from a silicon or silicon-on-insulator (SOI) wafer. A fixed sensing electrode for the microphone is formed from a top silicon layer of the wafer. Various polysilicon microphone structures are formed above a front side of the top silicon layer by depositing at least one oxide layer, forming the structures, and then removing a portion of the oxide underlying the structures from a back side of the top silicon layer through trenches formed through the top silicon layer. The trenches allow sound waves to reach the diaphragm from the back side of the top silicon layer. In an SOI wafer, a cavity is formed through a bottom silicon layer and an intermediate oxide layer to expose the trenches for both removing the oxide and allowing the sound waves to reach the diaphragm. An inertial sensor may be formed on the same wafer, with various inertial sensor structures formed at substantially the same time and using substantially the same processes as corresponding microphone structures.
Abstract translation: 微机械麦克风由硅或绝缘体上硅（SOI）晶片形成。 用于麦克风的固定感测电极由晶片的顶部硅层形成。 通过沉积形成结构的至少一个氧化物层，然后通过形成的沟槽从顶部硅层的背面去除结构物下面的氧化物的一部分，形成在顶部硅层前侧上的各种多晶硅麦克风结构 通过顶层硅层。 沟槽允许声波从顶部硅层的背面到达隔膜。 在SOI晶片中，通过底部硅层和中间氧化物层形成空腔，以露出沟槽，以去除氧化物并允许声波到达隔膜。 惯性传感器可以形成在相同的晶片上，其中各种惯性传感器结构基本上在同一时间形成并且使用与对应的麦克风结构基本上相同的过程。
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