摘要:
A memory controller receives a logical address of a data unit in a memory and scrambles the logical address according to an address scrambling scheme. The address scrambling scheme maps the logical address to time-multiplexed output of physical address pins of the memory controller. At least one of the physical address pins, which is to be mapped in a time phase in a baseline design, is to be unmapped in a corresponding time phase if a dimensional parameter of the memory changes. The logical address comprises row address bits and column address bits. All of the even row address bits may be mapped in a time phase for outputting the row address, and all of the odd row address bits may be mapped in another time phase for outputting the row address. Thus, configuration flexibility of the memory controller is improved.
摘要:
A method and apparatus for configuring a memory device, such as a flash memory device, is herein described. Features/functional modules of a memory device, are selectable by a manufacturer, customer, or user. Instead of a manufacturer having to complete numerous redesigns of a memory product to meet multiple customer's special needs, a single all inclusive device is manufactured and the customized features are selected/configured, by the manufacturer, or by the customer themselves. By using one time programmable (OTP) flags, the features are enabled or disabled, by the manufacturer, customer, or user, and may potentially not be altered by a user later. Moreover, after configuring a memory device, a manufacturer, customer, or end user may also lock down a configuration module to ensure the configuration itself is not later intentionally or inadvertently altered.
摘要:
A flash memory device having a plurality of flash array blocks and a block status register circuit containing a block status register for storing a block status for each flash array block. A flash array controller circuit in the flash memory device performs program or erase operations on the flash array blocks, and maintains the block status in each block status register. An interface circuit in the flash memory device enables read access of the block status registers over a bus.
摘要:
A flash memory device having a plurality of flash array blocks and a block status register circuit containing a block status register for storing a block status for each flash array block. A flash array controller circuit in the flash memory device performs program or erase operations on the flash array blocks, and maintains the block status in each block status register. An interface circuit in the flash memory device enables read access of the block status registers over a bus.
摘要:
A method and device for selectively enabling and disabling write access to flash blocks in a flash memory device. A lock command locks and unlocks a flash block in a flash array containing a plurality of flash blocks. A block data row decoder selects a block data area of the flash block, and a block status row decoder selects a block status area of the flash block. A lock bit in the block status area is programmed to a first logic state if the lock command specifies a lock flash block operation, or to a second logic state if the lock command specifies a release flash block operation. If a write protect input, read from the write protect pin of the flash memory device, indicates that a write lock is enabled and if a block enabled status bit in a block status register corresponding to the block indicates that the block has the write lock, then the lock bit is read and stored into the block enabled status bit in the block status register corresponding to the block. The write protect input is read again from the write protect pin and if the write protect input indicates that the write lock is enabled, and if the block enabled status bit in the block status register corresponding to the block, as updated, indicates that the block has the write lock, then an error is signaled.