摘要:
A semiconductor memory device to which information of different data bits can be written, and a method of electrically testing the semiconductor memory device are provided. In a mode for testing a memory cell array of the semiconductor memory device, the semiconductor memory comprises a control signal generation pad capable of writing non-identical data to data input/output pads of each group when data is written to the memory cell array.
摘要:
A semiconductor memory device to which information of different data bits can be written, and a method of electrically testing the semiconductor memory device are provided. In a mode for testing a memory cell array of the semiconductor memory device, the semiconductor memory comprises a control signal generation pad capable of writing non-identical data to data input/output pads of each group when data is written to the memory cell array.
摘要:
An electrical signal transmission module includes a plurality of optical signal lines and a plurality of electrical signal lines. The plurality of optical signal lines converting a first externally input electrical signal into an optical signal, transmitting the optical signal, converting the optical signal back into the first electrical signal, and outputting the first electrical signal. The plurality of electrical signal lines transmitting a second externally input electrical signal and outputting the second electrical signal.
摘要:
An electrical signal transmission module includes a plurality of optical signal lines and a plurality of electrical signal lines. The plurality of optical signal lines converting a first externally input electrical signal into an optical signal, transmitting the optical signal, converting the optical signal back into the first electrical signal, and outputting the first electrical signal. The plurality of electrical signal lines transmitting a second externally input electrical signal and outputting the second electrical signal.
摘要:
A semiconductor memory device to which information of different data bits can be written, and a method of electrically testing the semiconductor memory device are provided. In a mode for testing a memory cell array of the semiconductor memory device, the semiconductor memory comprises a control signal generation pad capable of writing non-identical data to data input/output pads of each group when data is written to the memory cell array.