Semiconductor memory device capable of storing data of various patterns and method of electrically testing the semiconductor memory device
    1.
    发明申请
    Semiconductor memory device capable of storing data of various patterns and method of electrically testing the semiconductor memory device 失效
    能够存储各种图案的数据的半导体存储器件以及对半导体存储器件进行电测试的方法

    公开(公告)号:US20060098506A1

    公开(公告)日:2006-05-11

    申请号:US11267203

    申请日:2005-11-04

    IPC分类号: G11C29/00

    摘要: A semiconductor memory device to which information of different data bits can be written, and a method of electrically testing the semiconductor memory device are provided. In a mode for testing a memory cell array of the semiconductor memory device, the semiconductor memory comprises a control signal generation pad capable of writing non-identical data to data input/output pads of each group when data is written to the memory cell array.

    摘要翻译: 提供可以写入不同数据位的信息的半导体存储器件,以及电半导体存储器件的电测试方法。 在用于测试半导体存储器件的存储单元阵列的模式中,半导体存储器包括一个控制信号生成焊盘,当数据被写入存储单元阵列时,该控制信号产生焊盘能够将不相同的数据写入每个组的数据输入/输出焊盘。

    Semiconductor memory device capable of storing data of various patterns and method of electrically testing the semiconductor memory device
    5.
    发明授权
    Semiconductor memory device capable of storing data of various patterns and method of electrically testing the semiconductor memory device 失效
    能够存储各种图案的数据的半导体存储器件以及对半导体存储器件进行电测试的方法

    公开(公告)号:US07433252B2

    公开(公告)日:2008-10-07

    申请号:US11267203

    申请日:2005-11-04

    IPC分类号: G11C29/00

    摘要: A semiconductor memory device to which information of different data bits can be written, and a method of electrically testing the semiconductor memory device are provided. In a mode for testing a memory cell array of the semiconductor memory device, the semiconductor memory comprises a control signal generation pad capable of writing non-identical data to data input/output pads of each group when data is written to the memory cell array.

    摘要翻译: 提供可以写入不同数据位的信息的半导体存储器件,以及电半导体存储器件的电测试方法。 在用于测试半导体存储器件的存储单元阵列的模式中,半导体存储器包括一个控制信号生成焊盘,当数据被写入存储单元阵列时,该控制信号产生焊盘能够将不相同的数据写入每个组的数据输入/输出焊盘。