公开(公告)号：US06417043B1

公开(公告)日：2002-07-09

申请号：US09528268

申请日：2000-03-17

Applicant: Lothar Risch ,  Wolfgang Rösner ,  Ties Ramcke ,  Hermann Jacobs

Inventor： Lothar Risch ,  Wolfgang Rösner ,  Ties Ramcke ,  Hermann Jacobs

IPC: H01L2976

CPC classification number: H01L21/822 ,  G11C17/10 ,  H01L27/101

Abstract: Resistors are connected between word lines and bit lines running transversely with respect thereto. The resistors have a higher resistance than the word lines and the bit lines. The bit lines are each connected to a sense amplifier which regulates the potential on the respective bit line to a reference potential and at which an output signal can be picked off. If one of the word lines is selected and all the other word lines are put at reference potential, then the resistance of the resistor, which is assigned to an information item, can be read from the output signal.

Abstract translation: 电阻器连接在相对于其横向延伸的字线和位线之间。 电阻器具有比字线和位线更高的电阻。 位线各自连接到读出放大器，其将相应位线上的电位调节到参考电位，并且可以在其处拾取输出信号。 如果选择一条字线并且所有其它字线被置于参考电位，则可以从输出信号中读取分配给信息项的电阻的电阻。

公开(公告)号：US06379978B2

公开(公告)日：2002-04-30

申请号：US09761801

申请日：2001-01-16

Applicant: Bernd Goebel ,  Hermann Jacobs ,  Siegfried Schwarzl ,  Emmerich Bertagnolli

Inventor： Bernd Goebel ,  Hermann Jacobs ,  Siegfried Schwarzl ,  Emmerich Bertagnolli

IPC: H01L2100

CPC classification number: H01L27/228 ,  B82Y10/00 ,  G11C11/15

Abstract: A storage cell is described which includes a storage element whose electric resistance represents an information unit and can be influenced by a magnetic field as well as a transistor which when the information is read out allows for the corresponding storage cell to be selected from among the storage cells. To write the information unit, a write line and a bit line are provided which intersect in the area of the storage element and are able to generate the magnetic field. The storage cell is disposed between the bit line and a shared voltage supply connection. The storage cell is disposed between the bit line and the write line and the write line can coincide with a gate line that controls the transistor. The transistor is a planar or vertical transistor. The storage element and the transistor can be positioned next to or on top of each other.

Abstract translation: 描述了一种存储单元，其包括其电阻表示信息单元并且可以受到磁场的影响的存储元件以及当读出信息时允许从存储器中选择相应的存储单元的晶体管 细胞。 为了写入信息单元，提供写入线和位线，其在存储元件的区域中相交并且能够产生磁场。 存储单元设置在位线和共享电压供应连接之间。 存储单元设置在位线和写入线之间，并且写入线可以与控制晶体管的栅极线重合。 晶体管是平面或垂直晶体管。 存储元件和晶体管可以位于彼此之间或之上。