公开(公告)号：US06562668B2

公开(公告)日：2003-05-13

申请号：US09927362

申请日：2001-08-13

Applicant: Jin Jang ,  In Keun Woo ,  Sang Wook Lee

Inventor： Jin Jang ,  In Keun Woo ,  Sang Wook Lee

IPC: H01L2100

CPC classification number: H01L29/66765 ,  H01L29/4908

Abstract: In the method of fabricating a thin film transistor, a first aluminum layer, which is later oxidized, or aluminum nitride layer is formed on a glass substrate. A metal gate is formed on the aluminum layer or the aluminum nitride layer. Oxidation of the aluminum layer is carried either prior to or after forming the gate. A thin film transistor structure that includes the metal gate is then formed over the substrate.