公开(公告)号：US5339181A

公开(公告)日：1994-08-16

申请号：US934396

申请日：1992-08-25

申请人： Sang-soo Kim ,  In-sik Jang ,  Nam-deog Kim ,  Jeong-ha Son

发明人： Sang-soo Kim ,  In-sik Jang ,  Nam-deog Kim ,  Jeong-ha Son

IPC分类号： G02F1/136 ,  G02F1/1362 ,  G02F1/1368 ,  G02F1/1335

CPC分类号： G02F1/136213 ,  G02F1/136209

摘要： An active matrix LCD which essentially differs from presently available active matrix LCDs in that the layout of a first electrode of a storage capacitor associated with each pixel thereof is modified in such a manner as to significantly increase the aperture and contrast ratios thereof relative to those of presently available active matrix LCDs. More particularly, the first electrodes of the storage capacitors are laid out in such a manner as to substantially surround their associated pixel electrodes, and preferably, only overlap a marginal edge portion of their associated pixel electrodes, about the periphery thereof.

摘要翻译： 与目前可用的有源矩阵LCD基本上不同的有源矩阵LCD，其中与其每个像素相关联的存储电容器的第一电极的布局以这样的方式被修改，以便显着地增加其相对于 目前可用的有源矩阵LCD。 更具体地，存储电容器的第一电极以基本上围绕其相关联的像素电极的方式布置，并且优选地，仅在其相关联的像素电极的边缘部分的周围重叠。

公开(公告)号：US5266521A

公开(公告)日：1993-11-30

申请号：US828458

申请日：1992-01-31

申请人： Sang-in Lee ,  Chang-soo Park ,  Jeong-ha Son

发明人： Sang-in Lee ,  Chang-soo Park ,  Jeong-ha Son

IPC分类号： H01L21/20 ,  H01L21/3205 ,  H01L21/321 ,  H01L21/768 ,  H01L23/532 ,  H01L21/441

CPC分类号： H01L21/76882 ,  H01L21/32115 ,  H01L21/7684 ,  H01L23/53214 ,  H01L21/76804 ,  H01L2924/0002 ,  Y10S438/913

摘要： A method for manufacturing a semiconductor device, comprising the steps of forming an insulating interlayer on a semiconductor substrate to provide a semiconductor intermediate product, providing the insulating interlayer with an opening, forming a first metal layer on the semiconductor intermediate product, heat-treating the first metal layer to fill up the opening with the metal, forming a second metal layer on the first metal layer, and then heat-treating the second layer to planarize the metal layer. An alternative embodiment of the invention encompasses a method for manufacturing a semiconductor device, comprising the steps of providing a semiconductor wafer with an opening formed thereon, forming a metal layer on the semiconductor wafer, and then heat-treating the metal layer to fill up the opening with the metal, wherein pure Al or an aluminum alloy having no Si component is used as the metal in forming the metal layer.

摘要翻译： 一种制造半导体器件的方法，包括以下步骤：在半导体衬底上形成绝缘中间层以提供半导体中间产物，为绝缘中间层提供开口，在半导体中间产物上形成第一金属层，热处理 第一金属层用金属填充开口，在第一金属层上形成第二金属层，然后热处理第二层以使金属层平坦化。 本发明的替代实施例包括一种用于制造半导体器件的方法，包括以下步骤：提供半导体晶片，其上形成有开口，在半导体晶片上形成金属层，然后热处理金属层以填充 与金属一起开口，其中在形成金属层时使用纯Al或不含Si成分的铝合金作为金属。