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    Performing optical proximity correction with the aid of design rule checkers
    2.
    发明授权
    Performing optical proximity correction with the aid of design rule checkers 失效
    借助设计规则检查器执行光学邻近校正

    公开(公告)号：US5900338A

    公开(公告)日：1999-05-04

    申请号：US912887

    申请日：1997-08-15

    申请人： Mario Garza ,  Nicholas K. Eib ,  John V. Jensen ,  Keith K. Chao

    发明人： Mario Garza ,  Nicholas K. Eib ,  John V. Jensen ,  Keith K. Chao

    IPC分类号： G03F7/20 ,  G03F9/00

    CPC分类号： G03F7/70483 ,  G03F1/36 ,  G03F7/70441

    摘要： A method is disclosed for identifying regions of an integrated circuit layout design where optical proximity correction will be most useful and then performing optical proximity correction on those regions only. More specifically, the method includes the following steps: (a) analyzing an integrated circuit layout design with a design rule checker to locate features of the integrated circuit layout design meeting predefined criteria; and (b) performing optical proximity correction on the features meeting the criteria in order to generate a reticle design. The criteria employed by the design rule checker to select features include outside corners on patterns, inside corners on features, feature size, feature shape, and feature angles.

    摘要翻译： 公开了一种用于识别集成电路布局设计的区域的方法，其中光学邻近校正将是最有用的，然后仅在这些区域上进行光学邻近校正。 更具体地说，该方法包括以下步骤：（a）利用设计规则检查器分析集成电路布局设计，以定位满足预定准则的集成电路布局设计的特征; 和（b）对符合标准的特征进行光学邻近校正，以便产生掩模版设计。 设计规则检查器选择特征的标准包括图案上的外角，特征的内角，特征尺寸，特征形状和特征角度。

    Multi-level resolution lithography
    3.
    发明授权
    Multi-level resolution lithography 失效
    多级分辨光刻技术

    公开(公告)号：US5703376A

    公开(公告)日：1997-12-30

    申请号：US655249

    申请日：1996-06-05

    申请人： John V. Jensen

    发明人： John V. Jensen

    IPC分类号： H01J37/302

    CPC分类号： H01J37/3026 ,  H01J2237/30488 ,  H01J2237/31761

    摘要： A system for lithographic rastering of an image, defined by an array of pixels, onto an image-accepting substrate that allows irradiation of the total pixel pattern in reduced time. The total image is first divided into a collection of one or more geometrically isolated pixel arrays, with all pixels in an array being connected to each other. Each pixel array is decomposed into a fine region, consisting of all image pixels within P pixels of a boundary of that array, where P is a selected positive integer, such as 1, 2 or 3, and a bulk region consisting of all image pixels in that array that are not part of a fine region. A pixel array may include one or more bulk regions and one or more fine regions. A fine region for a pixel array is further decomposed into a first fine sub-region with pixel width at least equal to P1 pixels, where P1 is a selected integer satisfying 2.ltoreq.P1.ltoreq.P, and a second fine sub-region with pixel width no greater than P1-1 pixels.

    摘要翻译： 一种用于将由像素阵列限定的图像的平版印刷技术用于允许在缩短的时间内照射总像素图案的图像接收基板上的系统。 总图像首先被划分为一个或多个几何隔离的像素阵列的集合，阵列中的所有像素彼此连接。 每个像素阵列被分解成由该阵列的边界的P个像素内的所有图像像素构成的精细区域，其中P是选择的正整数，例如1,2或3，以及由所有图像像素组成的体区域 在该阵列中不属于精细区域。 像素阵列可以包括一个或多个主体区域和一个或多个精细区域。 用于像素阵列的精细区域进一步分解成具有至少等于P1像素的像素宽度的第一精细子区域，其中P1是满足2

    Method and apparatus for verifying the post-optical proximity corrected mask wafer image sensitivity to reticle manufacturing errors
    4.
    发明授权
    Method and apparatus for verifying the post-optical proximity corrected mask wafer image sensitivity to reticle manufacturing errors 失效
    用于验证后光学邻近校正的掩模晶片图像对掩模版制造误差的敏感度的方法和装置

    公开(公告)号：US07325222B2

    公开(公告)日：2008-01-29

    申请号：US10800219

    申请日：2004-03-12

    申请人： Nadya G. Strelkova ,  Ebo H. Croffie ,  John V. Jensen

    发明人： Nadya G. Strelkova ,  Ebo H. Croffie ,  John V. Jensen

    IPC分类号： G06F17/50

    CPC分类号： G03F1/36

    摘要： A method for verifying reticle enhancement technique latent image sensitivity to mask manufacturing errors. The method includes the steps of revising a polygon based on mask CD distributions to provide a virtual mask, imaging the virtual mask to obtain response function statistical parameters, and comparing the statistical parameters to process tolerance requirements. Preferably, the method includes the steps of simulating an aerial and/or latent image of the virtual mask, calculating response functions based on the mask image simulation, collecting measurements and calculating statistical parameters based on the response functions, and comparing the statistical parameters with design rule requirements (i.e., for DI yield percentage for required mask manufacturing specification). The virtual mask is obtained by using mask CD distribution to induce statistical variations to layouts which have passed through the conventional OPC procedure.

    摘要翻译： 一种验证掩模版增强技术潜像灵敏度以掩盖制造误差的方法。 该方法包括以下步骤：基于掩模CD分布修改多边形以提供虚拟掩码，对虚拟掩码进行成像以获得响应函数统计参数，以及将统计参数与过程公差要求进行比较。 优选地，该方法包括以下步骤：模拟虚拟掩模的天线和/或潜像，基于掩模图像模拟计算响应函数，基于响应函数收集测量和计算统计参数，并将统计参数与设计进行比较 规则要求（即，对于所需掩模制造规范的DI产率百分比）。 通过使用掩模CD分布来获得虚拟掩模，以引起已经通过常规OPC过程的布局的统计变化。

    Chromeless phase shift mask
    5.
    发明授权
    Chromeless phase shift mask 失效
    无色相移掩模

    公开(公告)号：US07005217B2

    公开(公告)日：2006-02-28

    申请号：US10406847

    申请日：2003-04-04

    申请人： George E. Bailey ,  Neal P. Callan ,  John V. Jensen

    发明人： George E. Bailey ,  Neal P. Callan ,  John V. Jensen

    IPC分类号： G03F9/00

    CPC分类号： G03F1/32 ,  G03F1/38 ,  G03F7/70283

    摘要： A photolithographic mask for receiving light at a wavelength, phase, and intensity and printing a desired image on a substrate with an optical system. The mask is formed on an optically transmissive substrate, called a mask blank. The mask blank is preferably one hundred percent transmissive of the light intensity at the wavelength. At least one layer of an attenuated material that is at least partially transmissive to the wavelength of the light is formed on the optically transmissive substrate. The at least one layer of the attenuated material preferably blocks from about fifty percent to about ninety-four percent of the intensity of the light at the wavelength, whereas the prior art masks use materials that block about six percent of the intensity of the light at the wavelength. The attenuated material defines three feature types on the mask, including a primary image having edges, a scattering bar disposed near the edges of the primary image, and a background region. The primary image represents the desired image to be printed on the substrate. The scattering bar is adapted to enhance a contrast of the primary image and to at least reduce the intensity of the light at the edges of the primary image. The background region is adapted to block the light without using a material that is non transmissive to the light, such as chrome. By “block the light” it is meant that the background region substantially and preferably reduces the intensity of the light passing through the background region to about zero.

    摘要翻译： 一种光刻掩模，用于接收波长，相位和强度的光，并用光学系统在基板上印刷所需的图像。 掩模形成在光学透射基底上，称为掩模毛坯。 掩模毛坯优选在波长处的光强度的百分之百的透射率。 在光学透射基底上形成至少一部分对光的波长至少部分透射的衰减材料层。 衰减材料的至少一层优选阻挡波长处的光强度的约百分之五十到百分之九十四，而现有技术的掩模使用阻挡光的强度的约六分之一的材料 波长。 衰减材料在掩模上限定三个特征类型，包括具有边缘的主图像，设置在主图像边缘附近的散射条以及背景区域。 主图像表示要印刷在基板上的所需图像。 散射棒适于增强主图像的对比度，并且至少减小主图像边缘处的光的强度。 背景区域适于阻挡光，而不使用不透光的材料，例如铬。 通过“阻挡光”是指背景区域基本上优选地将通过背景区域的光的强度降低到大约零。

    Utility bucket backpack apparatus
    6.
    发明授权
    Utility bucket backpack apparatus 有权
    实用桶背包装置

    公开(公告)号：US09072366B2

    公开(公告)日：2015-07-07

    申请号：US14028787

    申请日：2013-09-17

    申请人： John V. Jensen ,  Michael C. Gibbon

    发明人： John V. Jensen ,  Michael C. Gibbon

    IPC分类号： A45F3/14 ,  B65D21/00 ,  A45F3/04 ,  B65D21/02

    CPC分类号： A45F3/04 ,  A45F3/14 ,  A45F2003/142 ,  A45F2003/146 ,  B65D21/0233

    摘要： A utility bucket backpack apparatus having an upper strap and a lower strap may have each of the upper and lower straps connected to two backpack straps. The lower strap may further be connected to a bottom strap. The upper strap may further be connected to two handle straps. The upper strap and the lower strap may also be removably connected to the outer circumference of a utility bucket.

    摘要翻译： 具有上带和下带的公用桶背包装置可以将上带和下带中的每一个连接到两个背包带。 下带可以进一步连接到底带。 上带可以进一步连接到两个把手带。 上带和下带也可拆卸地连接到公用桶的外周。

    Optical proximity correction method and apparatus
    7.
    发明授权
    Optical proximity correction method and apparatus 失效
    光学邻近校正方法和装置

    公开(公告)号：US06269472B1

    公开(公告)日：2001-07-31

    申请号：US08991785

    申请日：1997-12-12

    申请人： Mario Garza ,  John V. Jensen ,  Nicholas K. Eib ,  Keith K. Chao

    发明人： Mario Garza ,  John V. Jensen ,  Nicholas K. Eib ,  Keith K. Chao

    IPC分类号： G03F900

    CPC分类号： G03F7/70441 ,  G03F1/36 ,  H01J37/3023 ,  H01J2237/31769

    摘要： Disclosed is a method for correcting a layout design using a design rule checker. The method includes providing a layout design file having the layout design that is to be corrected for optical proximity by the design rule checker. Providing a run set to the design rule checker. The run set includes a plurality of correction values that are used to correct a plurality of features of the layout design that have a selected space dimension. Identifying each of the plurality of features that have the selected space dimension. The method further includes correcting each of the plurality of features that have the selected space dimension with one correction value of the plurality of correction values of the run set. Preferably, the run set is generated from a correction table that has the plurality of correction values.

    摘要翻译： 公开了一种使用设计规则检查器来校正布局设计的方法。 该方法包括提供具有布局设计的布局设计文件，该布局设计将被设计规则检查器的光学邻近度校正。 为设计规则检查器提供运行集。 运行集合包括用于校正具有选定的空间维度的布局设计的多个特征的多个校正值。 识别具有所选择的空间维度的多个特征中的每一个。 该方法还包括用运行集合的多个校正值的一个校正值校正具有所选择的空间维度的多个特征中的每一个。 优选地，从具有多个校正值的校正表生成运行组。

    Performing optical proximity correction with the aid of design rule checkers
    9.
    发明授权
    Performing optical proximity correction with the aid of design rule checkers 有权
    借助设计规则检查器执行光学邻近校正

    公开(公告)号：US06282696B1

    公开(公告)日：2001-08-28

    申请号：US09265510

    申请日：1999-03-09

    申请人： Mario Garza ,  Nicholas K. Eib ,  John V. Jensen ,  Keith K. Chao

    发明人： Mario Garza ,  Nicholas K. Eib ,  John V. Jensen ,  Keith K. Chao

    IPC分类号： G06F760

    CPC分类号： G03F7/70441

    摘要： A method is disclosed for identifying regions of an integrated circuit layout design where optical proximity correction will be most useful and then performing optical proximity correction on those regions only. More specifically, the method includes the following steps: (a) analyzing an integrated circuit layout design with a design rule checker to locate features of the integrated circuit layout design meeting predefined criteria; and (b) performing optical proximity correction on the features meeting the criteria in order to generate a reticle design. The criteria employed by the design rule checker to select features include outside corners on patterns, inside corners on features, feature size, feature shape, and feature angles.

    摘要翻译： 公开了一种用于识别集成电路布局设计的区域的方法，其中光学邻近校正将是最有用的，然后仅在这些区域上进行光学邻近校正。 更具体地说，该方法包括以下步骤：（a）利用设计规则检查器分析集成电路布局设计，以定位满足预定准则的集成电路布局设计的特征; 和（b）对符合标准的特征进行光学邻近校正，以便产生掩模版设计。 设计规则检查器选择特征的标准包括图案上的外角，特征的内角，特征尺寸，特征形状和特征角度。