公开(公告)号：US20140061791A1

公开(公告)日：2014-03-06

申请号：US13596481

申请日：2012-08-28

申请人： KUN-HUANG YU ,  Chin-Fu Chen

发明人： KUN-HUANG YU ,  Chin-Fu Chen

IPC分类号： H01L29/78

CPC分类号： H01L29/0653 ,  H01L29/0878 ,  H01L29/404 ,  H01L29/407 ,  H01L29/7816

摘要： A MOS transistor is described, including: a source region and a drain region in a semiconductor substrate, an isolation between the source region and the drain region, a first gate conductor between the source region and the isolation, at least one conductive plug electrically connected to the first gate conductor and penetrating into the isolation, and at least one second gate conductor on the isolation, which is electrically connected to the first gate conductor and the at least one conductive plug. One of the at least one conductive plug is between the first gate conductor and the at least one second gate conductor.

摘要翻译： 描述了一种MOS晶体管，包括：半导体衬底中的源极区域和漏极区域，源极区域和漏极区域之间的隔离，源区域与隔离物之间的第一栅极导体，至少一个导电插塞电连接 到所述第一栅极导体并且穿透所述隔离物，以及所述隔离件上的至少一个第二栅极导体，其电连接到所述第一栅极导体和所述至少一个导电插塞。 至少一个导电插头中的一个位于第一栅极导体和至少一个第二栅极导体之间​​。

公开(公告)号：US20130277742A1

公开(公告)日：2013-10-24

申请号：US13454149

申请日：2012-04-24

申请人： Chiu-Te Lee ,  Ke-Feng Lin ,  Shu-Wen Lin ,  Kun-Huang Yu ,  Chih-Chung Wang ,  Te-Yuan Wu

发明人： Chiu-Te Lee ,  Ke-Feng Lin ,  Shu-Wen Lin ,  Kun-Huang Yu ,  Chih-Chung Wang ,  Te-Yuan Wu

IPC分类号： H01L29/78 ,  H01L21/76

CPC分类号： H01L29/0653 ,  H01L29/0878 ,  H01L29/407 ,  H01L29/7816

摘要： A semiconductor structure comprises a substrate having a first conductive type; a deep well having a second conductive type formed in the substrate and extending down from a surface of the substrate; a first well having the first conductive type and a second well having the second conductive type both formed in the deep well and extending down from the surface of the substrate, and the second well spaced apart from the first well; a gate electrode formed on the substrate and disposed between the first and second wells; an isolation extending down from the surface of the substrate and disposed between the gate electrode and the second well; a conductive plug including a first portion and a second portion electrically connected to each other, and the first portion electrically connected to the gate electrode, and the second portion penetrating into the isolation.

摘要翻译： 半导体结构包括具有第一导电类型的衬底; 具有形成在所述基板中并从所述基板的表面向下延伸的第二导电类型的深阱; 具有第一导电类型的第一阱和具有第二导电类型的第二阱都形成在深阱中并且从衬底的表面向下延伸，并且第二阱与第一阱间隔开; 栅电极，形成在所述基板上并且设置在所述第一阱和所述第二阱之间; 从衬底的表面向下延伸并且设置在栅电极和第二阱之间的隔离件; 导电插头，其包括彼此电连接的第一部分和第二部分，并且所述第一部分电连接到所述栅电极，并且所述第二部分穿透所述隔离。

公开(公告)号：US08766358B2

公开(公告)日：2014-07-01

申请号：US13454149

申请日：2012-04-24

申请人： Chiu-Te Lee ,  Ke-Feng Lin ,  Shu-Wen Lin ,  Kun-Huang Yu ,  Chih-Chung Wang ,  Te-Yuan Wu

发明人： Chiu-Te Lee ,  Ke-Feng Lin ,  Shu-Wen Lin ,  Kun-Huang Yu ,  Chih-Chung Wang ,  Te-Yuan Wu

IPC分类号： H01L29/76

CPC分类号： H01L29/0653 ,  H01L29/0878 ,  H01L29/407 ,  H01L29/7816

摘要： A semiconductor structure comprises a substrate having a first conductive type; a deep well having a second conductive type formed in the substrate and extending down from a surface of the substrate; a first well having the first conductive type and a second well having the second conductive type both formed in the deep well and extending down from the surface of the substrate, and the second well spaced apart from the first well; a gate electrode formed on the substrate and disposed between the first and second wells; an isolation extending down from the surface of the substrate and disposed between the gate electrode and the second well; a conductive plug including a first portion and a second portion electrically connected to each other, and the first portion electrically connected to the gate electrode, and the second portion penetrating into the isolation.

摘要翻译： 半导体结构包括具有第一导电类型的衬底; 具有形成在所述基板中并从所述基板的表面向下延伸的第二导电类型的深阱; 具有第一导电类型的第一阱和具有第二导电类型的第二阱都形成在深阱中并且从衬底的表面向下延伸，并且第二阱与第一阱间隔开; 栅电极，形成在所述基板上并且设置在所述第一阱和所述第二阱之间; 从衬底的表面向下延伸并且设置在栅电极和第二阱之间的隔离件; 导电插头，其包括彼此电连接的第一部分和第二部分，并且所述第一部分电连接到所述栅电极，并且所述第二部分穿透所述隔离。

公开(公告)号：US08729631B2

公开(公告)日：2014-05-20

申请号：US13596481

申请日：2012-08-28

申请人： Kun-Huang Yu ,  Chin-Fu Chen

发明人： Kun-Huang Yu ,  Chin-Fu Chen

IPC分类号： H01L29/66

CPC分类号： H01L29/0653 ,  H01L29/0878 ,  H01L29/404 ,  H01L29/407 ,  H01L29/7816

摘要： A MOS transistor is described, including: a source region and a drain region in a semiconductor substrate, an isolation between the source region and the drain region, a first gate conductor between the source region and the isolation, at least one conductive plug electrically connected to the first gate conductor and penetrating into the isolation, and at least one second gate conductor on the isolation, which is electrically connected to the first gate conductor and the at least one conductive plug. One of the at least one conductive plug is between the first gate conductor and the at least one second gate conductor.

摘要翻译： 描述了一种MOS晶体管，包括：半导体衬底中的源极区域和漏极区域，源极区域和漏极区域之间的隔离，源区域与隔离物之间的第一栅极导体，至少一个导电插塞电连接 到所述第一栅极导体并且穿透所述隔离物，以及所述隔离件上的至少一个第二栅极导体，其电连接到所述第一栅极导体和所述至少一个导电插塞。 至少一个导电插头中的一个位于第一栅极导体和至少一个第二栅极导体之间​​。

公开(公告)号：US08704304B1

公开(公告)日：2014-04-22

申请号：US13645668

申请日：2012-10-05

申请人： Kun-Huang Yu

发明人： Kun-Huang Yu

IPC分类号： H01L29/66

CPC分类号： H01L29/0653 ,  H01L29/404 ,  H01L29/407 ,  H01L29/7816 ,  H01L29/7825 ,  H01L29/7835

摘要： A semiconductor structure is provided. The semiconductor structure includes a semiconductor substrate, a dielectric layer, a dielectric structure and an electrode structure. The dielectric layer is on an upper substrate surface of the semiconductor substrate. The dielectric structure and the semiconductor substrate have opposing first and second interfaces therebetween. The electrode structure comprises an electrode truck portion and at least one electrode branch portion. The at least one electrode branch portion is extended from the electrode truck portion down into the dielectric structure. The at least one electrode branch portion and the first interface have the smallest gap distance substantially bigger than 300 Å therebetween.

摘要翻译： 提供半导体结构。 半导体结构包括半导体衬底，电介质层，电介质结构和电极结构。 电介质层位于半导体衬底的上衬底表面上。 电介质结构和半导体衬底之间具有相对的第一和第二接口。 电极结构包括电极卡车部分和至少一个电极分支部分。 至少一个电极分支部分从电极卡车部分向下延伸到电介质结构中。 所述至少一个电极分支部分和所述第一界面之间的距离基本上大于其间的最小间隙距离。

公开(公告)号：US20140097492A1

公开(公告)日：2014-04-10

申请号：US13645668

申请日：2012-10-05

申请人： Kun-Huang Yu

发明人： Kun-Huang Yu

IPC分类号： H01L29/78

CPC分类号： H01L29/0653 ,  H01L29/404 ,  H01L29/407 ,  H01L29/7816 ,  H01L29/7825 ,  H01L29/7835

摘要： A semiconductor structure is provided. The semiconductor structure includes a semiconductor substrate, a dielectric layer, a dielectric structure and an electrode structure. The dielectric layer is on an upper substrate surface of the semiconductor substrate. The dielectric structure and the semiconductor substrate have opposing first and second interfaces therebetween. The electrode structure comprises an electrode truck portion and at least one electrode branch portion. The at least one electrode branch portion is extended from the electrode truck portion down into the dielectric structure. The at least one electrode branch portion and the first interface have the smallest gap distance substantially bigger than 300 Å therebetween.

摘要翻译： 提供半导体结构。 半导体结构包括半导体衬底，电介质层，电介质结构和电极结构。 电介质层位于半导体衬底的上衬底表面上。 电介质结构和半导体衬底之间具有相对的第一和第二接口。 电极结构包括电极卡车部分和至少一个电极分支部分。 至少一个电极分支部分从电极卡车部分向下延伸到电介质结构中。 所述至少一个电极分支部分和所述第一界面之间的距离基本上大于其间的最小间隙距离。