摘要:
Positive resist patterns prepared by using a derivative of polyacrylic acid esters containing halogen expressed by the following general formula for the resist material; ##STR1## (where A is a structural unit which is derived from monomers having a copolymerable double bond, and X is either a halogen atom or a methyl group. m is a positive integer, n is 0 or a positive integer, n/m is 0 to 2 and m+n are 20 to 20,000. Y.sub.1 to Y.sub.5 are a fluorine or hydrogen atom and at least one of them is a fluorine atom).
摘要:
Halogen-containing polyacrylate derivatives having the formula: ##STR1## wherein A is a structural unit derived from a copolymeriazable monomer having a double bond; R is ##STR2## wherein each of R.sub.1 and R.sub.2 is a hydrogen atom or a fluorinated methyl group, provided R.sub.1 and R.sub.2 are not hydrogen atoms at the same time, and R.sub.3 is a hydrogen atom or a lower alkyl group; X is a halogen atom or a methyl group; and m is a positive integer, n is 0 or a positive integer, and n/m from 0 to 2, preferably from 0 to 1 are disclosed.Also disclosed are methods for forming a resist pattern by using the halogen-containing polyacrylate derivatives as a resist material.
摘要:
A halogen-containing polyacrylate derivative having the formula: ##STR1## wherein A is a structural unit derived from a copolymerizable monomer having a double bond; R is ##STR2## wherein each of R.sub.1 and R.sub.2 is a hydrogen atom or a fluorinated methyl group, provided R.sub.1 and R.sub.2 are not hydrogen atoms at the same time, and R.sub.3 is a hydrogen atom or a lower alkyl group; X is a halogen atom or a methyl group; and m is a positive integer, n is 0 or a positive integer, and n/m is from 0 to 2, preferably from 0 to 1.