公开(公告)号：US20100221894A1

公开(公告)日：2010-09-02

申请号：US12064861

申请日：2006-12-28

申请人： Woo Young Lee ,  Jin Hee Ham ,  Woo Young Shim ,  Jong Wook Roh ,  Seung Hyun Lee ,  Kye Jin Jeong

发明人： Woo Young Lee ,  Jin Hee Ham ,  Woo Young Shim ,  Jong Wook Roh ,  Seung Hyun Lee ,  Kye Jin Jeong

IPC分类号： H01L21/20

CPC分类号： C23C14/14 ,  B82Y30/00 ,  B82Y40/00 ,  C30B1/12 ,  C30B29/02 ,  C30B29/60

摘要： Provided is a method for manufacturing a nanowire using stress-induced growth. The method includes: providing a substrate with an intermediate layer formed thereon; forming thin film on the intermediate layer, wherein the thin film made of material having more than 2×10−6/° C. of thermal expansion coefficient difference from the intermediate layer; inducing tensile stress due to the thermal expansion coefficient difference between the thin film and the substrate by performing a heat treatment on the substrate with the thin film formed; and growing single-crystalline nanowire of the material by inducing compressive stress at the thin film through cooling of the substrate.

摘要翻译： 提供了使用应力诱导生长制造纳米线的方法。 该方法包括：向基板提供其上形成的中间层; 在中间层上形成薄膜，其中由与中间层的热膨胀系数差大于2×10 -6 /℃的材料制成的薄膜; 通过对形成有薄膜的基板进行热处理，引起由于薄膜和基板之间的热膨胀系数差引起的拉伸应力; 并通过冷却衬底在薄膜处诱导压应力来增长材料的单晶纳米线。