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公开(公告)号:US20100221894A1
公开(公告)日:2010-09-02
申请号:US12064861
申请日:2006-12-28
申请人: Woo Young Lee , Jin Hee Ham , Woo Young Shim , Jong Wook Roh , Seung Hyun Lee , Kye Jin Jeong
发明人: Woo Young Lee , Jin Hee Ham , Woo Young Shim , Jong Wook Roh , Seung Hyun Lee , Kye Jin Jeong
IPC分类号: H01L21/20
摘要: Provided is a method for manufacturing a nanowire using stress-induced growth. The method includes: providing a substrate with an intermediate layer formed thereon; forming thin film on the intermediate layer, wherein the thin film made of material having more than 2×10−6/° C. of thermal expansion coefficient difference from the intermediate layer; inducing tensile stress due to the thermal expansion coefficient difference between the thin film and the substrate by performing a heat treatment on the substrate with the thin film formed; and growing single-crystalline nanowire of the material by inducing compressive stress at the thin film through cooling of the substrate.
摘要翻译: 提供了使用应力诱导生长制造纳米线的方法。 该方法包括:向基板提供其上形成的中间层; 在中间层上形成薄膜,其中由与中间层的热膨胀系数差大于2×10 -6 /℃的材料制成的薄膜; 通过对形成有薄膜的基板进行热处理,引起由于薄膜和基板之间的热膨胀系数差引起的拉伸应力; 并通过冷却衬底在薄膜处诱导压应力来增长材料的单晶纳米线。