公开(公告)号：US20100175734A1

公开(公告)日：2010-07-15

申请号：US12657084

申请日：2010-01-13

申请人： Woo Young Lee ,  Jin Hee Ham ,  Seung Hyun Lee ,  Jong Wook Roh ,  Hyun Su Kim ,  Woo Chul Kim

发明人： Woo Young Lee ,  Jin Hee Ham ,  Seung Hyun Lee ,  Jong Wook Roh ,  Hyun Su Kim ,  Woo Chul Kim

IPC分类号： H01L35/16 ,  B05D5/12 ,  B32B15/02

CPC分类号： H01L35/16 ,  B82Y30/00 ,  B82Y40/00 ,  C30B1/12 ,  C30B29/02 ,  C30B29/52 ,  C30B29/60 ,  H01L35/34 ,  Y10T428/12097

摘要： A thermoelectric nanowire and a method of manufacturing the same, in which an oxide layer and a thermoelectric material layer, both of which have different thermal expansion coefficients, are stacked on a substrate, and a single crystal thermoelectric nanowire is grown from a thermoelectric material using the compressive stress caused by the difference between the thermal expansion coefficients. The method includes preparing a substrate on which an oxide layer is formed, forming a plurality of nanoparticles, each of which includes aluminum (Al), silver (Ag), iron (Fe) or oxides thereof, on the oxide layer, forming a thermoelectric material thin film, which has thermoelectric properties, above the oxide layer so as to include the nanoparticles formed on the oxide layer, heat-treating the substrate having the thermoelectric material thin film to grow the thermoelectric nanowire containing the nanoparticles, and cooling the substrate at room temperature after the heat-treatment.

摘要翻译： 热电纳米线及其制造方法，其中具有不同热膨胀系数的氧化物层和热电材料层堆叠在基板上，并且单晶热电纳米线由热电材料生长，使用 由压缩应力引起的热膨胀系数之差。 该方法包括制备其上形成有氧化物层的基板，在氧化物层上形成多个纳米颗粒，每个纳米颗粒包括铝（Al），银（Ag），铁（Fe）或氧化物），形成热电 具有热电性质的材料薄膜，以包含形成在氧化物层上的纳米颗粒，对具有热电材料薄膜的基板进行热处理，以生长含有纳米颗粒的热电纳米线，并将基板冷却 热处理后的室温。

公开(公告)号：US20100221894A1

公开(公告)日：2010-09-02

申请号：US12064861

申请日：2006-12-28

申请人： Woo Young Lee ,  Jin Hee Ham ,  Woo Young Shim ,  Jong Wook Roh ,  Seung Hyun Lee ,  Kye Jin Jeong

发明人： Woo Young Lee ,  Jin Hee Ham ,  Woo Young Shim ,  Jong Wook Roh ,  Seung Hyun Lee ,  Kye Jin Jeong

IPC分类号： H01L21/20

CPC分类号： C23C14/14 ,  B82Y30/00 ,  B82Y40/00 ,  C30B1/12 ,  C30B29/02 ,  C30B29/60

摘要： Provided is a method for manufacturing a nanowire using stress-induced growth. The method includes: providing a substrate with an intermediate layer formed thereon; forming thin film on the intermediate layer, wherein the thin film made of material having more than 2×10−6/° C. of thermal expansion coefficient difference from the intermediate layer; inducing tensile stress due to the thermal expansion coefficient difference between the thin film and the substrate by performing a heat treatment on the substrate with the thin film formed; and growing single-crystalline nanowire of the material by inducing compressive stress at the thin film through cooling of the substrate.

摘要翻译： 提供了使用应力诱导生长制造纳米线的方法。 该方法包括：向基板提供其上形成的中间层; 在中间层上形成薄膜，其中由与中间层的热膨胀系数差大于2×10 -6 /℃的材料制成的薄膜; 通过对形成有薄膜的基板进行热处理，引起由于薄膜和基板之间的热膨胀系数差引起的拉伸应力; 并通过冷却衬底在薄膜处诱导压应力来增长材料的单晶纳米线。