公开(公告)号：US20160284706A1

公开(公告)日：2016-09-29

申请号：US15014928

申请日：2016-02-03

申请人： Jae-yup CHUNG ,  Jong-shik YOON ,  Hwa-sung RHEE ,  Hee-don JEONG ,  Je-Min YOO ,  Kyu-man CHA ,  Jong-mil YOUN ,  Hyun-jo KIM

发明人： Jae-yup CHUNG ,  Jong-shik YOON ,  Hwa-sung RHEE ,  Hee-don JEONG ,  Je-Min YOO ,  Kyu-man CHA ,  Jong-mil YOUN ,  Hyun-jo KIM

IPC分类号： H01L27/092 ,  H01L27/02 ,  H01L29/06 ,  H01L29/78 ,  H01L27/088

CPC分类号： H01L27/0924 ,  H01L21/76229 ,  H01L21/76232 ,  H01L21/823821 ,  H01L21/82385 ,  H01L21/823878 ,  H01L27/0207 ,  H01L27/0886 ,  H01L29/7846

摘要： An integrated circuit (IC) device includes a fin-type active region formed in a substrate, a step insulation layer on at least one sidewall of the fin-type active region, and a first high-level isolation layer on the at least one sidewall of the fin-type active region. The fin-type active region protrudes from the substrate and extending in a first direction parallel to a main surface of the substrate, includes a channel region having a first conductivity type, and includes the stepped portion. The step insulation layer contacts the stepped portion of the fin-type active region. The step insulation layer is between the first high-level isolation layer and the at least one sidewall of the fin-type active region. The first high-level isolation layer extends in a second direction that is different from the first direction.

摘要翻译： 集成电路（IC）装置包括形成在衬底中的翅片型有源区，翅片型有源区的至少一个侧壁上的阶梯绝缘层，以及至少一个侧壁上的第一高电平隔​​离层 的鳍式活性区域。 翅片型有源区域从基板突出并且在平行于基板的主表面的第一方向上延伸，包括具有第一导电类型的沟道区域，并且包括台阶部分。 台阶绝缘层接触翅片型有源区的台阶部分。 台阶绝缘层在第一高电平隔​​离层和鳍式有源区的至少一个侧壁之间。 第一高级隔离层在与第一方向不同的第二方向上延伸。

公开(公告)号：US09922979B2

公开(公告)日：2018-03-20

申请号：US15014928

申请日：2016-02-03

申请人： Jae-yup Chung ,  Jong-shik Yoon ,  Hwa-sung Rhee ,  Hee-don Jeong ,  Je-Min Yoo ,  Kyu-man Cha ,  Jong-mil Youn ,  Hyun-jo Kim

发明人： Jae-yup Chung ,  Jong-shik Yoon ,  Hwa-sung Rhee ,  Hee-don Jeong ,  Je-Min Yoo ,  Kyu-man Cha ,  Jong-mil Youn ,  Hyun-jo Kim

IPC分类号： H01L29/78 ,  H01L27/092 ,  H01L27/088 ,  H01L27/02 ,  H01L21/762 ,  H01L21/8238

CPC分类号： H01L27/0924 ,  H01L21/76229 ,  H01L21/76232 ,  H01L21/823821 ,  H01L21/82385 ,  H01L21/823878 ,  H01L27/0207 ,  H01L27/0886 ,  H01L29/7846

摘要： An integrated circuit (IC) device includes a fin-type active region formed in a substrate, a step insulation layer on at least one sidewall of the fin-type active region, and a first high-level isolation layer on the at least one sidewall of the fin-type active region. The fin-type active region protrudes from the substrate and extending in a first direction parallel to a main surface of the substrate, includes a channel region having a first conductivity type, and includes the stepped portion. The step insulation layer contacts the stepped portion of the fin-type active region. The step insulation layer is between the first high-level isolation layer and the at least one sidewall of the fin-type active region. The first high-level isolation layer extends in a second direction that is different from the first direction.