公开(公告)号：US20160284706A1

公开(公告)日：2016-09-29

申请号：US15014928

申请日：2016-02-03

申请人： Jae-yup CHUNG ,  Jong-shik YOON ,  Hwa-sung RHEE ,  Hee-don JEONG ,  Je-Min YOO ,  Kyu-man CHA ,  Jong-mil YOUN ,  Hyun-jo KIM

发明人： Jae-yup CHUNG ,  Jong-shik YOON ,  Hwa-sung RHEE ,  Hee-don JEONG ,  Je-Min YOO ,  Kyu-man CHA ,  Jong-mil YOUN ,  Hyun-jo KIM

IPC分类号： H01L27/092 ,  H01L27/02 ,  H01L29/06 ,  H01L29/78 ,  H01L27/088

CPC分类号： H01L27/0924 ,  H01L21/76229 ,  H01L21/76232 ,  H01L21/823821 ,  H01L21/82385 ,  H01L21/823878 ,  H01L27/0207 ,  H01L27/0886 ,  H01L29/7846

摘要： An integrated circuit (IC) device includes a fin-type active region formed in a substrate, a step insulation layer on at least one sidewall of the fin-type active region, and a first high-level isolation layer on the at least one sidewall of the fin-type active region. The fin-type active region protrudes from the substrate and extending in a first direction parallel to a main surface of the substrate, includes a channel region having a first conductivity type, and includes the stepped portion. The step insulation layer contacts the stepped portion of the fin-type active region. The step insulation layer is between the first high-level isolation layer and the at least one sidewall of the fin-type active region. The first high-level isolation layer extends in a second direction that is different from the first direction.

摘要翻译： 集成电路（IC）装置包括形成在衬底中的翅片型有源区，翅片型有源区的至少一个侧壁上的阶梯绝缘层，以及至少一个侧壁上的第一高电平隔​​离层 的鳍式活性区域。 翅片型有源区域从基板突出并且在平行于基板的主表面的第一方向上延伸，包括具有第一导电类型的沟道区域，并且包括台阶部分。 台阶绝缘层接触翅片型有源区的台阶部分。 台阶绝缘层在第一高电平隔​​离层和鳍式有源区的至少一个侧壁之间。 第一高级隔离层在与第一方向不同的第二方向上延伸。

公开(公告)号：US20160247876A1

公开(公告)日：2016-08-25

申请号：US14965982

申请日：2015-12-11

申请人： Jae-yup Chung ,  Yoon-seok LEE ,  Hyun-jo KIM ,  Hwa-sung RHEE ,  Hee-don JEONG ,  Se-wan PARK ,  Bo-cheol JEONG

发明人： Jae-yup Chung ,  Yoon-seok LEE ,  Hyun-jo KIM ,  Hwa-sung RHEE ,  Hee-don JEONG ,  Se-wan PARK ,  Bo-cheol JEONG

IPC分类号： H01L29/06 ,  H01L29/417 ,  H01L29/10 ,  H01L29/08 ,  H01L27/092 ,  H01L29/78

CPC分类号： H01L21/823481 ,  H01L21/8232 ,  H01L21/823412 ,  H01L21/823431 ,  H01L21/823807 ,  H01L21/823821 ,  H01L21/823878 ,  H01L27/0886 ,  H01L27/0924 ,  H01L27/10879 ,  H01L29/0649 ,  H01L29/0843 ,  H01L29/1033 ,  H01L29/41791 ,  H01L29/785

摘要： An integrated circuit device includes first and second fin-type active regions having different conductive type channel regions, a first device isolation layer covering both sidewalk of the first fin-type active region, and a second device isolation layer covering both sidewalls of the second fin-type active region. The first device isolation layer and the second device isolation layer have different stack structures. To manufacture the integrated circuit device, the first device isolation layer covering both sidewalls of the first fin-type active region and the second device isolation layer covering both sidewalk of the second fin-type active region are formed after the first fin-type active region and the second fin-type active region are formed. The first device isolation layer and the second device isolation layer are formed to have different stack structure.

摘要翻译： 集成电路器件包括具有不同导电类型沟道区的第一和第二鳍式有源区，覆盖第一鳍式有源区的人行道的第一器件隔离层和覆盖第二鳍的两侧壁的第二器件隔离层 型活性区。 第一器件隔离层和第二器件隔离层具有不同的堆叠结构。 为了制造集成电路器件，覆盖第一鳍式有源区的两个侧壁的第一器件隔离层和覆盖第二鳍式有源区的人行道的第二器件隔离层在第​​一鳍式有源区 并形成第二鳍型有源区。 第一器件隔离层和第二器件隔离层形成为具有不同的堆叠结构。