RF plasma-enhanced deposition of fluorinated films
    1.
    发明授权
    RF plasma-enhanced deposition of fluorinated films 有权
    RF等离子体增强的氟化膜沉积

    公开(公告)号:US07901744B2

    公开(公告)日:2011-03-08

    申请号:US12271575

    申请日:2008-11-14

    IPC分类号: H05H1/24

    摘要: Low- or atmospheric pressure RF plasma-enhanced thin film deposition methods are provided for the deposition of hydrophobic fluorinated thin films onto various substrates. The methods include at least two steps. In the first step, RF plasma-mediated deposition is used to deposit a fluorinated film onto a substrate surface. In a second step, plasma-generated active sites on the fluorinated film are quenched by reacting them with stable fluorinated gas-phase molecules in situ, in the absence of plasma, to provide a hydrophobic fluorinated thin film having a very low oxygen content. In some instances the hydrophobic fluorinated thin films have an atomic oxygen concentration of no more than about 3%.

    摘要翻译: 提供低或大气压的RF等离子体增强薄膜沉积方法用于将疏水性氟化薄膜沉积到各种基底上。 该方法至少包括两个步骤。 在第一步骤中,使用RF等离子体介导的沉积将氟化膜沉积到衬底表面上。 在第二步中,通过在不存在等离子体的情况下将它们与原位稳定的氟化气相分子进行反应来猝灭氟化膜上的等离子体产生的活性位点,以提供具有非常低氧含量的疏水性氟化薄膜。 在一些情况下,疏水性氟化薄膜的原子氧浓度不超过约3%。

    RF PLASMA-ENHANCED DEPOSITION OF FLUORINATED FILMS
    3.
    发明申请
    RF PLASMA-ENHANCED DEPOSITION OF FLUORINATED FILMS 有权
    RF等离子体增强氟化膜沉积

    公开(公告)号:US20090123639A1

    公开(公告)日:2009-05-14

    申请号:US12271575

    申请日:2008-11-14

    IPC分类号: H05H1/24

    摘要: Low- or atmospheric pressure RF plasma-enhanced thin film deposition methods are provided for the deposition of hydrophobic fluorinated thin films onto various substrates. The methods include at least two steps. In the first step, RF plasma-mediated deposition is used to deposit a fluorinated film onto a substrate surface. In a second step, plasma-generated active sites on the fluorinated film are quenched by reacting them with stable fluorinated gas-phase molecules in situ, in the absence of plasma, to provide a hydrophobic fluorinated thin film having a very low oxygen content. In some instances the hydrophobic fluorinated thin films have an atomic oxygen concentration of no more than about 3%.

    摘要翻译: 提供低或大气压的RF等离子体增强薄膜沉积方法用于将疏水性氟化薄膜沉积到各种基底上。 该方法至少包括两个步骤。 在第一步骤中,使用RF等离子体介导的沉积将氟化膜沉积到衬底表面上。 在第二步中,通过在不存在等离子体的情况下将它们与原位稳定的氟化气相分子进行反应来猝灭氟化膜上的等离子体产生的活性位点,以提供具有非常低氧含量的疏水性氟化薄膜。 在一些情况下,疏水性氟化薄膜的原子氧浓度不超过约3%。