公开(公告)号：US20060065949A1

公开(公告)日：2006-03-30

申请号：US11230040

申请日：2005-09-19

申请人： Hidenori Kato ,  Masahide Mori ,  Hirofumi Watanabe

发明人： Hidenori Kato ,  Masahide Mori ,  Hirofumi Watanabe

IPC分类号： H01L29/00

CPC分类号： H01L21/76865 ,  H01L21/76805 ,  H01L21/76831 ,  H01L21/76846 ,  H01L21/76883 ,  H01L23/5228 ,  H01L27/0629 ,  H01L28/24

摘要： A semiconductor device equipped with an integrated circuit including a metal thin-film-resistor object is disclosed. The semiconductor device includes a lower layer side insulator film formed on a semiconductor substrate, a metal wiring pattern formed on the lower layer side insulator film, an underground insulator film having a silicon oxide-film that contains at least phosphor, or phosphor and boron in the uppermost layer formed on the lower layer side insulator film and the metal wiring pattern, and a connection hole formed in the underground insulator film on the metal wiring pattern. The metal thin-film-resistor object is formed covering the underground insulator film, and inside of the connection hole, and is electrically connected to the metal wiring pattern in the connection hole.

摘要翻译： 公开了一种配备有包括金属薄膜电阻体的集成电路的半导体器件。 半导体器件包括形成在半导体衬底上的下层侧绝缘膜，形成在下层侧绝缘膜上的金属布线图案，具有氧化硅膜的地下绝缘膜，所述氧化硅膜至少包含磷光体，或磷光体和硼 形成在下层侧绝缘膜和金属布线图案上的最上层，以及形成在金属布线图案上的地下绝缘膜的连接孔。 金属薄膜电阻体形成为覆盖地下绝缘膜，连接孔内部，与连接孔中的金属布线图案电连接。

公开(公告)号：US20050230833A1

公开(公告)日：2005-10-20

申请号：US11079315

申请日：2005-03-15

申请人： Hidenori Kato ,  Masahide Mori

发明人： Hidenori Kato ,  Masahide Mori

IPC分类号： H01L27/04 ,  B21B1/00 ,  B21C1/00 ,  B21F1/00 ,  H01C7/00 ,  H01L21/822 ,  H01L27/01

CPC分类号： H01L27/016 ,  H01C7/006

摘要： A semiconductor device includes a base insulation film formed on a semiconductor substrate via another layer, a metal thin-film resistance formed on the base insulation film, and a laser beam interruption film of a metal material interposed between the semiconductor substrate and the base insulation film.

摘要翻译： 半导体器件包括通过另一层形成在半导体衬底上的基底绝缘膜，形成在基底绝缘膜上的金属薄膜电阻和介于半导体衬底和基底绝缘膜之间的金属材料的激光束中断膜 。

公开(公告)号：US07425753B2

公开(公告)日：2008-09-16

申请号：US11230040

申请日：2005-09-19

申请人： Hidenori Kato ,  Masahide Mori ,  Hirofumi Watanabe

发明人： Hidenori Kato ,  Masahide Mori ,  Hirofumi Watanabe

IPC分类号： H01L29/00

CPC分类号： H01L21/76865 ,  H01L21/76805 ,  H01L21/76831 ,  H01L21/76846 ,  H01L21/76883 ,  H01L23/5228 ,  H01L27/0629 ,  H01L28/24

摘要： A semiconductor device equipped with an integrated circuit including a metal thin-film-resistor object is disclosed. The semiconductor device includes a lower layer side insulator film formed on a semiconductor substrate, a metal wiring pattern formed on the lower layer side insulator film, an underground insulator film having a silicon oxide-film that contains at least phosphor, or phosphor and boron in the uppermost layer formed on the lower layer side insulator film and the metal wiring pattern, and a connection hole formed in the underground insulator film on the metal wiring pattern. The metal thin-film-resistor object is formed covering the underground insulator film, and inside of the connection hole, and is electrically connected to the metal wiring pattern in the connection hole.

摘要翻译： 公开了一种配备有包括金属薄膜电阻体的集成电路的半导体器件。 半导体器件包括形成在半导体衬底上的下层侧绝缘膜，形成在下层侧绝缘膜上的金属布线图案，具有氧化硅膜的地下绝缘膜，所述氧化硅膜至少包含磷光体，或磷光体和硼 形成在下层侧绝缘膜和金属布线图案上的最上层，以及形成在金属布线图案上的地下绝缘膜的连接孔。 金属薄膜电阻体形成为覆盖地下绝缘膜，连接孔内部，与连接孔中的金属布线图案电连接。