公开(公告)号：US08818150B2

公开(公告)日：2014-08-26

申请号：US11731338

申请日：2007-03-30

Applicant: Matthew E. Grein ,  Theodore M. Lyszczarz ,  Michael W. Geis ,  Steven J. Spector ,  Donna M. Lennon ,  Yoon Jung

Inventor： Matthew E. Grein ,  Theodore M. Lyszczarz ,  Michael W. Geis ,  Steven J. Spector ,  Donna M. Lennon ,  Yoon Jung

IPC: G02B6/26

CPC classification number: G02F1/025 ,  B82Y20/00 ,  G02F1/0136

Abstract: Method and apparatus for modulation of both the intensity and the polarization of radiation in silicon waveguides by applying a biasing voltage to the waveguide.

Abstract translation: 通过向波导施加偏置电压来调制硅波导中的辐射的强度和极化两者的方法和装置。

公开(公告)号：US07880204B2

公开(公告)日：2011-02-01

申请号：US11541975

申请日：2006-10-02

Applicant: Michael W. Geis ,  Steven J. Spector ,  Donna M. Lennon ,  Matthew E. Grein ,  Robert T. Schulein ,  Jung U. Yoon ,  Franz Xaver Kaertner ,  Fuwan Gan ,  Theodore M. Lyszczarz

Inventor： Michael W. Geis ,  Steven J. Spector ,  Donna M. Lennon ,  Matthew E. Grein ,  Robert T. Schulein ,  Jung U. Yoon ,  Franz Xaver Kaertner ,  Fuwan Gan ,  Theodore M. Lyszczarz

IPC: H01L31/062 ,  H01L31/113

CPC classification number: H01L27/144 ,  H01L31/102

Abstract: A Silicon photodetector contains an insulating substrate having a top surface and a bottom surface. A Silicon layer is located on the top surface of the insulating substrate, where the Silicon layer contains a center region, the center region being larger in thickness than the rest of the Silicon layer. A top Silicon dioxide layer is located on a top surface of the center region. A left wing of the center region and a right wing of the center region are doped. The Silicon photodetector also has an active region located within the center region, where the active region contains a tailored crystal defect-impurity combination and Oxygen atoms.

Abstract translation: 硅光电检测器包含具有顶表面和底表面的绝缘基底。 硅层位于绝缘基板的顶表面上，其中硅层包含中心区域，中心区域的厚度大于硅层的其余部分。 顶部二氧化硅层位于中心区域的顶表面上。 中心区域的左翼和中心区域的右翼被掺杂。 硅光电探测器还具有位于中心区域内的有源区域，其中有源区域包含定制的晶体缺陷 - 杂质组合和氧原子。

公开(公告)号：US20100025787A1

公开(公告)日：2010-02-04

申请号：US11541975

申请日：2006-10-02

Applicant: Michael W. Geis ,  Steven J. Spector ,  Donna M. Lennon ,  Matthew E. Grein ,  Robert T. Schulein ,  Jung U. Yoon ,  Franz Xaver Kaertner ,  Fuwan Gan ,  Theodore M. Lyszczarz

Inventor： Michael W. Geis ,  Steven J. Spector ,  Donna M. Lennon ,  Matthew E. Grein ,  Robert T. Schulein ,  Jung U. Yoon ,  Franz Xaver Kaertner ,  Fuwan Gan ,  Theodore M. Lyszczarz

IPC: H01L31/0352 ,  H01L21/30 ,  H01L31/0232

CPC classification number: H01L27/144 ,  H01L31/102

Abstract: A Silicon photodetector contains an insulating substrate having a top surface and a bottom surface. A Silicon layer is located on the top surface of the insulating substrate, where the Silicon layer contains a center region, the center region being larger in thickness than the rest of the Silicon layer. A top Silicon dioxide layer is located on a top surface of the center region. A left wing of the center region and a right wing of the center region are doped. The Silicon photodetector also has an active region located within the center region, where the active region contains a tailored crystal defect-impurity combination and Oxygen atoms.

Abstract translation: 硅光电检测器包含具有顶表面和底表面的绝缘基底。 硅层位于绝缘基板的顶表面上，其中硅层包含中心区域，中心区域的厚度大于硅层的其余部分。 顶部二氧化硅层位于中心区域的顶表面上。 中心区域的左翼和中心区域的右翼被掺杂。 硅光电探测器还具有位于中心区域内的有源区域，其中有源区域包含定制的晶体缺陷 - 杂质组合和氧原子。

公开(公告)号：US06741619B1

公开(公告)日：2004-05-25

申请号：US09542061

申请日：2000-04-03

Applicant: Erik R. Thoen ,  Elisabeth M. Koontz ,  Erich P. Ippen ,  Leslie A. Kolodziejski ,  Franz X. Kaertner ,  Hermann A. Haus ,  Matthew E. Grein

Inventor： Erik R. Thoen ,  Elisabeth M. Koontz ,  Erich P. Ippen ,  Leslie A. Kolodziejski ,  Franz X. Kaertner ,  Hermann A. Haus ,  Matthew E. Grein

IPC: H01S3098

CPC classification number: H01S3/1112 ,  H01S3/06791 ,  H01S3/1063 ,  H01S3/1109 ,  H01S3/1118 ,  H01S5/0601 ,  H01S5/065 ,  H01S5/0657

Abstract: Systems and methods for enhancing the stability of a mode-locked laser's output are disclosed. The laser systems include a mode-locking element that mode-locks the laser's output, and a semiconductor element. The semiconductor element produces a loss at the laser's operative wavelength that increases as pulse energy increases, thereby enhancing the stability of the mode-locked output. The semiconductor elements can be used to enhance stability of both passively and actively mode-locked laser systems.

Abstract translation: 公开了用于提高锁模激光器输出的稳定性的系统和方法。 激光系统包括模式锁定激光器的输出的模式锁定元件和半导体元件。 半导体元件在激光器的工作波长处产生损耗，随着脉冲能量增加而增加，从而增强了锁模输出的稳定性。 半导体元件可用于增强被动和主动锁模激光系统的稳定性。