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公开(公告)号：US08818150B2
公开(公告)日：2014-08-26
申请号：US11731338
申请日：2007-03-30
Applicant: Matthew E. Grein , Theodore M. Lyszczarz , Michael W. Geis , Steven J. Spector , Donna M. Lennon , Yoon Jung
Inventor： Matthew E. Grein , Theodore M. Lyszczarz , Michael W. Geis , Steven J. Spector , Donna M. Lennon , Yoon Jung
IPC: G02B6/26
CPC classification number: G02F1/025 , B82Y20/00 , G02F1/0136
Abstract: Method and apparatus for modulation of both the intensity and the polarization of radiation in silicon waveguides by applying a biasing voltage to the waveguide.
Abstract translation: 通过向波导施加偏置电压来调制硅波导中的辐射的强度和极化两者的方法和装置。
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公开(公告)号：US20120236389A1
公开(公告)日：2012-09-20
申请号：US13414289
申请日：2012-03-07
Applicant: Juan C. Montoya , Steven J. Spector , Reuel Swint , Caroline A. Ross
Inventor： Juan C. Montoya , Steven J. Spector , Reuel Swint , Caroline A. Ross
CPC classification number: G02F1/093 , G02F1/0955 , G02F2203/15 , Y10T29/49826
Abstract: An optical structure for generating nonreciprocal loss is provided that includes a first substrate layer and a magneto-optical layer positioned on the first substrate layer. The magneto-optical layer achieves nonreciprocity with application of an external magnetic field so as to produce resonantly enhanced nonreciprocal loss.
Abstract translation: 提供了一种用于产生不可逆损耗的光学结构，其包括位于第一基底层上的第一基底层和磁光层。 磁光层通过施加外部磁场实现不可逆性，从而产生共振增强的非互易损耗。
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3.发明授权System and method for providing a high frequency response silicon photodetector 有权提供高频响应硅光电探测器的系统和方法
公开(公告)号：US07880204B2
公开(公告)日：2011-02-01
申请号：US11541975
申请日：2006-10-02
Applicant: Michael W. Geis , Steven J. Spector , Donna M. Lennon , Matthew E. Grein , Robert T. Schulein , Jung U. Yoon , Franz Xaver Kaertner , Fuwan Gan , Theodore M. Lyszczarz
Inventor： Michael W. Geis , Steven J. Spector , Donna M. Lennon , Matthew E. Grein , Robert T. Schulein , Jung U. Yoon , Franz Xaver Kaertner , Fuwan Gan , Theodore M. Lyszczarz
IPC: H01L31/062 , H01L31/113
CPC classification number: H01L27/144 , H01L31/102
Abstract: A Silicon photodetector contains an insulating substrate having a top surface and a bottom surface. A Silicon layer is located on the top surface of the insulating substrate, where the Silicon layer contains a center region, the center region being larger in thickness than the rest of the Silicon layer. A top Silicon dioxide layer is located on a top surface of the center region. A left wing of the center region and a right wing of the center region are doped. The Silicon photodetector also has an active region located within the center region, where the active region contains a tailored crystal defect-impurity combination and Oxygen atoms.
Abstract translation: 硅光电检测器包含具有顶表面和底表面的绝缘基底。 硅层位于绝缘基板的顶表面上，其中硅层包含中心区域，中心区域的厚度大于硅层的其余部分。 顶部二氧化硅层位于中心区域的顶表面上。 中心区域的左翼和中心区域的右翼被掺杂。 硅光电探测器还具有位于中心区域内的有源区域，其中有源区域包含定制的晶体缺陷 - 杂质组合和氧原子。
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公开(公告)号：US08749871B2
公开(公告)日：2014-06-10
申请号：US13414289
申请日：2012-03-07
Applicant: Juan C. Montoya , Steven J. Spector , Reuel Swint , Caroline A. Ross
Inventor： Juan C. Montoya , Steven J. Spector , Reuel Swint , Caroline A. Ross
IPC: G02F1/09
CPC classification number: G02F1/093 , G02F1/0955 , G02F2203/15 , Y10T29/49826
Abstract: An optical structure for generating nonreciprocal loss is provided that includes a first substrate layer and a magneto-optical layer positioned on the first substrate layer. The magneto-optical layer achieves nonreciprocity with application of an external magnetic field so as to produce resonantly enhanced nonreciprocal loss.
Abstract translation: 提供了一种用于产生不可逆损耗的光学结构，其包括位于第一基底层上的第一基底层和磁光层。 磁光层通过施加外部磁场实现不可逆性，从而产生共振增强的非互易损耗。
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5.发明申请System and method for providing a high frequency response silicon photodetector 有权提供高频响应硅光电探测器的系统和方法
公开(公告)号：US20100025787A1
公开(公告)日：2010-02-04
申请号：US11541975
申请日：2006-10-02
Applicant: Michael W. Geis , Steven J. Spector , Donna M. Lennon , Matthew E. Grein , Robert T. Schulein , Jung U. Yoon , Franz Xaver Kaertner , Fuwan Gan , Theodore M. Lyszczarz
Inventor： Michael W. Geis , Steven J. Spector , Donna M. Lennon , Matthew E. Grein , Robert T. Schulein , Jung U. Yoon , Franz Xaver Kaertner , Fuwan Gan , Theodore M. Lyszczarz
IPC: H01L31/0352 , H01L21/30 , H01L31/0232
CPC classification number: H01L27/144 , H01L31/102
Abstract: A Silicon photodetector contains an insulating substrate having a top surface and a bottom surface. A Silicon layer is located on the top surface of the insulating substrate, where the Silicon layer contains a center region, the center region being larger in thickness than the rest of the Silicon layer. A top Silicon dioxide layer is located on a top surface of the center region. A left wing of the center region and a right wing of the center region are doped. The Silicon photodetector also has an active region located within the center region, where the active region contains a tailored crystal defect-impurity combination and Oxygen atoms.
Abstract translation: 硅光电检测器包含具有顶表面和底表面的绝缘基底。 硅层位于绝缘基板的顶表面上，其中硅层包含中心区域，中心区域的厚度大于硅层的其余部分。 顶部二氧化硅层位于中心区域的顶表面上。 中心区域的左翼和中心区域的右翼被掺杂。 硅光电探测器还具有位于中心区域内的有源区域，其中有源区域包含定制的晶体缺陷 - 杂质组合和氧原子。
