公开(公告)号：US07839613B2

公开(公告)日：2010-11-23

申请号：US12045967

申请日：2008-03-11

申请人： Kook Whee Kwak ,  Nak Heon Choi

发明人： Kook Whee Kwak ,  Nak Heon Choi

IPC分类号： H02H9/00

CPC分类号： H01L27/0266

摘要： An electrostatic discharge protection circuit protects the internal circuits of a semiconductor. The electrostatic discharge protection circuit includes a first electrostatic protection unit connected to a power source supply pad. The first electrostatic protection unit discharges an ESD current into the power source supply pad when an ESD is introduced into the input/output pad, and generates a first driving voltage by utilizing the ESD current flow through a voltage-drop unit. A driver driven by the first driving voltage generates a second driving voltage by an ESD current. A second electrostatic protection unit discharges the introduced ESD current into the power source supply pad by the second driving voltage such that a voltage applied to a gate of the first NMOS transistor is reduced.

摘要翻译： 静电放电保护电路保护半导体的内部电路。 静电放电保护电路包括连接到电源供应板的第一静电保护单元。 当ESD被引入到输入/输出焊盘中时，第一静电保护单元将ESD电流放电到电源供应焊盘中，并且通过利用通过压降单元的ESD电流产生第一驱动电压。 由第一驱动电压驱动的驱动器通过ESD电流产生第二驱动电压。 第二静电保护单元通过第二驱动电压将引入的ESD电流放电到电源供应焊盘中，使得施加到第一NMOS晶体管的栅极的电压降低。

公开(公告)号：US07675722B2

公开(公告)日：2010-03-09

申请号：US11735007

申请日：2007-04-13

申请人： Nak Heon Choi

发明人： Nak Heon Choi

IPC分类号： H02H9/00

CPC分类号： H02H9/046

摘要： A device to protect a semiconductor device from electrostatic discharge includes a transferring unit transferring the static electricity inputted to said input/output terminal to the power line, a detecting unit sensing the potential difference between both ends of the transferring unit, located between an input/output terminal and one of the power lines, to output the detection voltage, and a discharging unit driven by said detection voltage and discharging the static electricity led to a specific power line to the other power line, and performs the discharging operation smoothly even with minute electrostatic current and a latter part of the static electricity by using the driving voltage, which is used to drive a conventional detecting unit, as the driving voltage of the ESD protection device, thereby safely protecting an internal circuit of a semiconductor device.

摘要翻译： 一种保护半导体装置免受静电放电的装置，包括将输入到所述输入/输出端子的静电转移到电力线的传送单元;检测单元，感测位于输入/输出端之间的转印单元的两端之间的电位差， 输出端子和电力线之一，以输出检测电压，由所述检测电压驱动的放电单元和静电放电导向到另一电力线的特定电力线，并且即使分钟也能平稳地执行排放操作 通过使用用于驱动常规检测单元的驱动电压作为ESD保护装置的驱动电压，从而安全地保护半导体器件的内部电路，从而产生静电电流和后一部分静电。

公开(公告)号：US07430099B2

公开(公告)日：2008-09-30

申请号：US11648328

申请日：2006-12-29

申请人： Kook Whee Kwak ,  Nak Heon Choi

发明人： Kook Whee Kwak ,  Nak Heon Choi

IPC分类号： H02H9/00

CPC分类号： H01L27/0266

摘要： An electrostatic discharge protection circuit protects the internal circuits of a semiconductor. The electrostatic discharge protection circuit includes a first electrostatic protection unit connected to a power source supply pad. The first electrostatic protection unit discharges an ESD current into the power source supply pad when an ESD is introduced into the input/output pad, and generates a first driving voltage by utilizing the ESD current flow through a voltage-drop unit. A driver driven by the first driving voltage generates a second driving voltage by an ESD current. A second electrostatic protection unit discharges the introduced ESD current into the power source supply pad by the second driving voltage such that a voltage applied to a gate of the first NMOS transistor is reduced.

摘要翻译： 静电放电保护电路保护半导体的内部电路。 静电放电保护电路包括连接到电源供应板的第一静电保护单元。 当ESD被引入到输入/输出焊盘中时，第一静电保护单元将ESD电流放电到电源供应焊盘中，并且通过利用通过压降单元的ESD电流产生第一驱动电压。 由第一驱动电压驱动的驱动器通过ESD电流产生第二驱动电压。 第二静电保护单元通过第二驱动电压将引入的ESD电流放电到电源供应焊盘中，使得施加到第一NMOS晶体管的栅极的电压降低。

公开(公告)号：US20080198518A1

公开(公告)日：2008-08-21

申请号：US12031132

申请日：2008-02-14

申请人： Nak Heon CHOI

发明人： Nak Heon CHOI

IPC分类号： H02H9/00

CPC分类号： H02H9/046

摘要： A device to protect a semiconductor device from electrostatic discharge is disclosed. In order to protect an internal circuit from electrostatic discharge, the semiconductor electrostatic protection device includes a transfer unit for transferring static electricity inputted to an input/output terminal to a first power line. A driving unit is also included for outputting a driving voltage corresponding to a potential difference between the input/output terminal and the first power line. Finally, a discharge unit for discharging the static electricity inputted to the input/output terminal to a second power line by way of the driving voltage is provided. The semiconductor electrostatic protection device prevents damage to an internal circuit due to the voltage drop of an intermediate medium by reducing the intermediate medium on a static electricity discharge path.

摘要翻译： 公开了一种用于保护半导体器件免受静电放电的器件。 为了保护内部电路免受静电放电，半导体静电保护装置包括用于将输入到输入/输出端子的静电转移到第一电力线的转移单元。 还包括驱动单元，用于输出对应于输入/输出端和第一电源线之间的电位差的驱动电压。 最后，提供一种用于通过驱动电压将输入到输入端子的静电放电到第二电力线的放电单元。 半导体静电保护装置通过减少静电放电路径上的中间介质来防止由于中间介质的电压降而损坏内部电路。

公开(公告)号：US20080123229A1

公开(公告)日：2008-05-29

申请号：US11771323

申请日：2007-06-29

申请人： Nak Heon CHOI

发明人： Nak Heon CHOI

IPC分类号： H02H9/00

CPC分类号： H02H9/046

摘要： A device for discharaging static electricity protects an internal circuit against an electrostatic current. The device includes a discharge part which is connected between an input/output pad and a ground voltage line to form a discharge path discharging an electrostatic current introduced from an input/output pad; and an amplification circuit which is connected in parallel with the discharge part and supplies a sense amplification signal generated by amplifying the electrostatic current as a control signal of the discharge part.

摘要翻译： 用于放电静电的装置保护内部电路免受静电电流的影响。 该装置包括连接在输入/输出焊盘和接地电压线之间的放电部分，以形成放电从输入/输出焊盘引入的静电电流的放电路径; 以及放大电路，其与放电部并联连接，并且通过放大静电电流产生的感测放大信号作为放电部的控制信号。

公开(公告)号：US20070242400A1

公开(公告)日：2007-10-18

申请号：US11735007

申请日：2007-04-13

申请人： Nak Heon CHOI

发明人： Nak Heon CHOI

IPC分类号： H02H9/00

CPC分类号： H02H9/046

摘要： A device to protect a semiconductor device from electrostatic discharge includes a transferring unit transferring the static electricity inputted to said input/output terminal to the power line, a detecting unit sensing the potential difference between both ends of the transferring unit, located between an input/output terminal and one of the power lines, to output the detection voltage, and a discharging unit driven by said detection voltage and discharging the static electricity led to a specific power line to the other power line, and performs the discharging operation smoothly even with minute electrostatic current and a latter part of the static electricity by using the driving voltage, which is used to drive a conventional detecting unit, as the driving voltage of the ESD protection device, thereby safely protecting an internal circuit of a semiconductor device.

摘要翻译： 一种保护半导体装置免受静电放电的装置，包括将输入到所述输入/输出端子的静电转移到电力线的传送单元;检测单元，感测位于输入/输出端之间的转印单元的两端之间的电位差， 输出端子和电力线之一，以输出检测电压，由所述检测电压驱动的放电单元和静电放电导向到另一电力线的特定电力线，并且即使分钟也能平稳地执行排放操作 通过使用用于驱动常规检测单元的驱动电压作为ESD保护装置的驱动电压，从而安全地保护半导体器件的内部电路，从而产生静电电流和后一部分静电。

公开(公告)号：US07821752B2

公开(公告)日：2010-10-26

申请号：US12031132

申请日：2008-02-14

申请人： Nak Heon Choi

发明人： Nak Heon Choi

IPC分类号： H02H9/00

CPC分类号： H02H9/046

摘要： A device to protect a semiconductor device from electrostatic discharge is disclosed. In order to protect an internal circuit from electrostatic discharge, the semiconductor electrostatic protection device includes a transfer unit for transferring static electricity inputted to an input/output terminal to a first power line. A driving unit is also included for outputting a driving voltage corresponding to a potential difference between the input/output terminal and the first power line. Finally, a discharge unit for discharging the static electricity inputted to the input/output terminal to a second power line by way of the driving voltage is provided. The semiconductor electrostatic protection device prevents damage to an internal circuit due to the voltage drop of an intermediate medium by reducing the intermediate medium on a static electricity discharge path.

摘要翻译： 公开了一种用于保护半导体器件免受静电放电的器件。 为了保护内部电路免受静电放电，半导体静电保护装置包括用于将输入到输入/输出端子的静电转移到第一电力线的转移单元。 还包括驱动单元，用于输出对应于输入/输出端和第一电源线之间的电位差的驱动电压。 最后，提供一种用于通过驱动电压将输入到输入端子的静电放电到第二电力线的放电单元。 半导体静电保护装置通过减少静电放电路径上的中间介质来防止由于中间介质的电压降而损坏内部电路。

公开(公告)号：US20070242401A1

公开(公告)日：2007-10-18

申请号：US11735038

申请日：2007-04-13

申请人： Jung Eon MOON ,  Dae Gwan KANG ,  Kook Whee KWAK ,  Nak Heon CHOI ,  Si Woo LEE ,  Hee Jeong SON ,  Suk YUN ,  Seong Hoon JEONG ,  Joon Won LEE

发明人： Jung Eon MOON ,  Dae Gwan KANG ,  Kook Whee KWAK ,  Nak Heon CHOI ,  Si Woo LEE ,  Hee Jeong SON ,  Suk YUN ,  Seong Hoon JEONG ,  Joon Won LEE

IPC分类号： H02H9/00

CPC分类号： H02H9/046

摘要： An electrostatic discharge (ESD) protection circuit protects a gate oxide of elements in an internal circuit against ESD. During an ESD test, if the sum of driving voltages of ESD protectors connected between a power pad and a ground pad is higher than the gate oxide breakdown voltage of elements in the internal circuit, the structure of the ESD protector is changed or another ESD protector is additionally provided so as to protect the gate oxide of the elements in the internal circuit against ESD.

摘要翻译： 静电放电（ESD）保护电路保护内部电路中元件的栅极氧化物免受ESD影响。 在ESD测试期间，如果连接在电源焊盘和接地焊盘之间的ESD保护器的驱动电压的总和高于内部电路中的元件的栅极氧化物击穿电压，则ESD保护器的结构被改变，或者另一个ESD保护器 另外设置为保护内部电路中的元件的栅极氧化物免于ESD。

公开(公告)号：US07746610B2

公开(公告)日：2010-06-29

申请号：US11771323

申请日：2007-06-29

申请人： Nak Heon Choi

发明人： Nak Heon Choi

IPC分类号： H02H9/00

CPC分类号： H02H9/046

摘要： A device for discharaging static electricity protects an internal circuit against an electrostatic current. The device includes a discharge part which is connected between an input/output pad and a ground voltage line to form a discharge path discharging an electrostatic current introduced from an input/output pad; and an amplification circuit which is connected in parallel with the discharge part and supplies a sense amplification signal generated by amplifying the electrostatic current as a control signal of the discharge part.

摘要翻译： 用于放电静电的装置保护内部电路免受静电电流的影响。 该装置包括连接在输入/输出焊盘和接地电压线之间的放电部分，以形成放电从输入/输出焊盘引入的静电电流的放电路径; 以及放大电路，其与放电部并联连接，并且通过放大静电电流产生的感测放大信号作为放电部的控制信号。

公开(公告)号：US20100046131A1

公开(公告)日：2010-02-25

申请号：US12611212

申请日：2009-11-03

申请人： Jung Eon Moon ,  Dae Gwan Kang ,  Kook Whee Kwak ,  Nak Heon Choi ,  Si Woo Lee ,  Hee Jeong Son ,  Yun Suk ,  Seong Hoon Jeong ,  Joon Won Lee

发明人： Jung Eon Moon ,  Dae Gwan Kang ,  Kook Whee Kwak ,  Nak Heon Choi ,  Si Woo Lee ,  Hee Jeong Son ,  Yun Suk ,  Seong Hoon Jeong ,  Joon Won Lee

IPC分类号： H02H9/04

CPC分类号： H02H9/046

摘要： An electrostatic discharge (ESD) protection circuit protects a gate oxide of elements in an internal circuit against ESD. During an ESD test, if the sum of driving voltages of ESD protectors connected between a power pad and a ground pad is higher than the gate oxide breakdown voltage of elements in the internal circuit, the structure of the ESD protector is changed or another ESD protector is additionally provided so as to protect the gate oxide of the elements in the internal circuit against ESD.

摘要翻译： 静电放电（ESD）保护电路保护内部电路中元件的栅极氧化物免受ESD影响。 在ESD测试期间，如果连接在电源焊盘和接地焊盘之间的ESD保护器的驱动电压的总和高于内部电路中的元件的栅极氧化物击穿电压，则ESD保护器的结构被改变，或者另一个ESD保护器 另外设置为保护内部电路中的元件的栅极氧化物免于ESD。