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    Method of forming CMOS transistors with dual-metal silicide formed through the contact openings
    2.
    发明授权
    Method of forming CMOS transistors with dual-metal silicide formed through the contact openings 有权
    通过接触开口形成双金属硅化物的CMOS晶体管的方法

    公开(公告)号：US07861406B2

    公开(公告)日：2011-01-04

    申请号：US11693608

    申请日：2007-03-29

    Applicant: Saurabh Lodha ,  Pushkar Ranade ,  Christopher Auth

    Inventor： Saurabh Lodha ,  Pushkar Ranade ,  Christopher Auth

    IPC: H01R43/00

    CPC classification number: H01L21/26506 ,  H01L21/28518 ,  H01L21/76843 ,  H01L21/76855 ,  H01L21/823814 ,  H01L21/823871 ,  H01L29/665 ,  H01L29/7833 ,  Y10T29/49121 ,  Y10T29/49147 ,  Y10T29/49156

    Abstract: Methods and associated structures of forming a microelectronic device are described. Those methods may include amorphizing at least one contact area of a source/drain region of a transistor structure by implanting through at least one contact opening, forming a first layer of metal on the at least one contact area, forming a second layer of metal on the first layer of metal, selectively etching a portion of the second metal layer, annealing the at least one contact area to form at least one silicide, and removing the unreacted first metal layer and second metal layer from the transistor structure and forming a conductive material in the at least one contact opening.

    Abstract translation: 描述形成微电子器件的方法和相关结构。 这些方法可以包括通过至少一个接触开口注入晶体管结构的源极/漏极区域的至少一个接触区域，在至少一个接触区域上形成第一金属层，形成第二层金属 所述第一金属层选择性蚀刻所述第二金属层的一部分，退火所述至少一个接触区域以形成至少一个硅化物，以及从所述晶体管结构去除所述未反应的第一金属层和第二金属层并形成导电材料 在所述至少一个接触开口中。

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