公开(公告)号：US08034654B2

公开(公告)日：2011-10-11

申请号：US12461175

申请日：2009-08-04

Applicant: Edward Yi Chang ,  Shih-Hsuan Tang ,  Yue-Cin Lin

Inventor： Edward Yi Chang ,  Shih-Hsuan Tang ,  Yue-Cin Lin

IPC: H01L21/00

CPC classification number: H01L21/02532 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02694 ,  H01L31/0687 ,  H01L31/0693 ,  H01L31/1812 ,  H01L31/1852 ,  Y02E10/544 ,  Y02P70/521

Abstract: The method is disclosed that Si+ is implanted on Si substrate to enhance strain relaxation at the interface between the metamorphic GexSi1−x buffer layers and Si substrate, in order to facilitate the growth of a high quality Ge on Si substrate. And several GexSi1−x buffer layers (Si/Ge0.8Si0.2/Ge0.9Si0.1/Ge) are grown on top of Si substrate by UHVCVD. Then grow pure Ge layer of low dislocation density on GexSi1−x buffer layer. Finally, grow up high efficiency III-V solar cell on GexSi1−x buffer layer.

Abstract translation: 公开了Si +被注入到Si衬底上以增强变质GexSi1-x缓冲层与Si衬底之间界面处的应变松弛的方法，以便于在Si衬底上生长高质量的Ge。 并且通过UHVCVD在Si衬底的顶部生长几个GexSi1-x缓冲层（Si / Ge0.8Si0.2 / Ge0.9Si0.1 / Ge）。 然后在GexSi1-x缓冲层上生长低位错密度的纯Ge层。 最后，在GexSi1-x缓冲层上长大高效III-V太阳能电池。

公开(公告)号：US20100129956A1

公开(公告)日：2010-05-27

申请号：US12461175

申请日：2009-08-04

Applicant: Edward Yi Chang ,  Shih-Hsuan Tang ,  Yue-Cin Lin

Inventor： Edward Yi Chang ,  Shih-Hsuan Tang ,  Yue-Cin Lin

IPC: H01L21/20

CPC classification number: H01L21/02532 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02694 ,  H01L31/0687 ,  H01L31/0693 ,  H01L31/1812 ,  H01L31/1852 ,  Y02E10/544 ,  Y02P70/521

Abstract: The method is disclosed that Si+ is implanted on Si substrate to enhance strain relaxation at the interface between the metamorphic GexSi1−x buffer layers and Si substrate, in order to facilitate the growth of a high quality Ge on Si substrate. And several GexSi1−x buffer layers (Si/Ge0.8Si0.2/Ge0.9Si0.1/Ge) are grown on top of Si substrate by UHVCVD. Then grow pure Ge layer of low dislocation density on GexSi1−x buffer layer. Finally, grow up high efficiency III-V solar cell on GexSi1−x buffer layer.

Abstract translation: 公开了Si +被注入到Si衬底上以增强变质GexSi1-x缓冲层与Si衬底之间界面处的应变松弛的方法，以便于在Si衬底上生长高质量的Ge。 并且通过UHVCVD在Si衬底的顶部生长几个GexSi1-x缓冲层（Si / Ge0.8Si0.2 / Ge0.9Si0.1 / Ge）。 然后在GexSi1-x缓冲层上生长低位错密度的纯Ge层。 最后，在GexSi1-x缓冲层上长大高效III-V太阳能电池。

公开(公告)号：US20130049070A1

公开(公告)日：2013-02-28

申请号：US13561977

申请日：2012-07-30

Applicant: Edward YI CHANG ,  Shih-Hsuan Tang ,  Yueh-Chin Lin

Inventor： Edward YI CHANG ,  Shih-Hsuan Tang ,  Yueh-Chin Lin

IPC: H01L29/778 ,  H01L21/20

CPC classification number: H01L29/7784 ,  H01L29/267

Abstract: A structure of high electron mobility transistor growth on Si substrate and the method thereof, in particular used for the semiconductor device manufacturing in the semiconductor industry. The UHVCVD system was used in the related invention to grow a Ge film on Si substrate then grow the high electron mobility transistor on the Ge film for the reduction of buffer layer thickness and cost. The function of the Ge film is preventing the formation of silicon oxide when growing III-V MHEMT structure in MOCVD system on Si substrate. The reason of using MHEMT in the invention is that the metamorphic buffer layer in MHEMT structure could block the penetration of dislocation which is formed because of the very large lattice mismatch (4.2%) between Ge and Si substrate.

Abstract translation: Si衬底上高电子迁移率晶体管生长的结构及其方法，特别用于半导体工业中的半导体器件制造。 在相关发明中使用UHVCVD系统在Si衬底上生长Ge膜，然后在Ge膜上生长高电子迁移率晶体管以降低缓冲层厚度和成本。 当Si衬底上的MOCVD系统中生长III-V MHEMT结构时，Ge膜的功能是防止形成氧化硅。 在本发明中使用MHEMT的原因是，MHEMT结构中的变质缓冲层可以阻止由于Ge和Si衬底之间的非常大的晶格失配（4.2％）而形成的位错渗透。

公开(公告)号：US08796117B2

公开(公告)日：2014-08-05

申请号：US13561977

申请日：2012-07-30

Applicant: Edward Yi Chang ,  Shih-Hsuan Tang ,  Yueh-Chin Lin

Inventor： Edward Yi Chang ,  Shih-Hsuan Tang ,  Yueh-Chin Lin

IPC: H01L21/20 ,  H01L21/36

CPC classification number: H01L29/7784 ,  H01L29/267

Abstract: A structure of high electron mobility transistor growth on Si substrate and the method thereof, in particular used for the semiconductor device manufacturing in the semiconductor industry. The UHVCVD system was used in the related invention to grow a Ge film on Si substrate then grow the high electron mobility transistor on the Ge film for the reduction of buffer layer thickness and cost. The function of the Ge film is preventing the formation of silicon oxide when growing III-V MHEMT structure in MOCVD system on Si substrate. The reason of using MHEMT in the invention is that the metamorphic buffer layer in MHEMT structure could block the penetration of dislocation which is formed because of the very large lattice mismatch (4.2%) between Ge and Si substrate.

Abstract translation: Si衬底上高电子迁移率晶体管生长的结构及其方法，特别用于半导体工业中的半导体器件制造。 在相关发明中使用UHVCVD系统在Si衬底上生长Ge膜，然后在Ge膜上生长高电子迁移率晶体管以降低缓冲层厚度和成本。 当Si衬底上的MOCVD系统中生长III-V MHEMT结构时，Ge膜的功能是防止形成氧化硅。 在本发明中使用MHEMT的原因是，MHEMT结构中的变质缓冲层可以阻止由于Ge和Si衬底之间的非常大的晶格失配（4.2％）而形成的位错渗透。