Abstract:
Disclosed is a scan test data compression method and decoding apparatus for multiple-scan-chain designs. The apparatus comprises a on-chip decoder connected to a tester. The decoder includes a decoding buffer configured as a multilayer architecture, a controller, and a switching box for receiving a shift signal or a copy signal. The decoding buffer is used to store decoded test data. While the decoder decodes the encoded data, it transmits control signals to both the decoding buffer and the switching box from the controller, and sends the decoded data to scan chains of a CUT for testing through the decoding buffer. This invention has the advantages of simple encoding method, high compression rate, low power consumption in testing, and without the fault coverage loss.
Abstract:
A display device and a manufacturing method thereof are provided. The display device includes a light guide, a light source, and a brightness enhancement film (BEF), and a dual brightness enhancement film (DBEF). The light guide has a first edge along a first direction and a second edge adjacent to the first edge corresponding to the light source. The BEF is disposed on the light guide and has a plurality of prisms along a second direction which rotates from 0 to 90 degrees with respect to the first direction. The DBEF has a transmission axis along a third direction which also rotates from 0 to 90 degrees with respect to the first direction.
Abstract:
A display device and a manufacturing method thereof are provided. The display device includes a light guide, a light source, and a brightness enhancement film (BEF), and a dual brightness enhancement film (DBEF). The light guide has a first edge along a first direction and a second edge adjacent to the first edge corresponding to the light source. The BEF is disposed on the light guide and has a plurality of prisms along a second direction which rotates from 0 to 90 degrees with respect to the first direction. The DBEF has a transmission axis along a third direction which also rotates from 0 to 90 degrees with respect to the first direction.
Abstract:
A method for polysilicon crystallization by simultaneous laser and rapid thermal annealing is disclosed. In the method, a substrate that has an amorphous silicon layer on top is first provided and positioned on a conveyor situated inside a temperature-controlled chamber. The temperature-controlled chamber is equipped with a window in a top wall that is substantially transparent to thermal and laser energy. A beam of thermal energy and simultaneously a beam of laser energy merged with the thermal energy is then directed through the window onto a top surface of the substrate to convert an amorphous silicon film into a polysilicon film.