公开(公告)号：US4691028A

公开(公告)日：1987-09-01

申请号：US855105

申请日：1986-04-23

申请人： Hiroo Inokuchi ,  Gunji Saito ,  Kazuhiko Seki ,  Takehiko Mori

发明人： Hiroo Inokuchi ,  Gunji Saito ,  Kazuhiko Seki ,  Takehiko Mori

IPC分类号： C07D339/06 ,  C07D343/00 ,  C07D345/00 ,  H01B1/12 ,  H01L39/12 ,  C07D317/32 ,  C07D327/04

CPC分类号： H01B1/121 ,  C07D339/06 ,  C07D343/00 ,  C07D345/00 ,  H01L39/121

摘要： A fulvalene derivative represented by formula (1) below. ##STR1## where A.sup.1 -A.sup.8 are at least one atom or a combination of two or more atoms selected from S atom, Se atom, and Te atom; and R.sup.1 -R.sup.4 are alkyl or alkene having 3 to 22 carbon atoms.The fulvalene derivative of this invention has electric conductivity as it is at normal temperature and under normal pressure. It is useful as a semiconductor, which has an electrical conductance greater than 10.sup.-9 Scm.sup.-1 and a minimum specific resistance of 10.sup.5 .OMEGA..multidot.cm order.

摘要翻译： 由下式（1）表示的富瓦烯衍生物。 （1）其中A1-A8是选自S原子，Se原子和Te原子的至少一个原子或两个或更多个原子的组合; 和R 1 -R 4是具有3至22个碳原子的烷基或烯烃。 本发明的富瓦烯衍生物在常温常压下具有导电性。 它作为半导体是有用的，其半导体电导率大于10-9 Scm-1，最小电阻为105欧米伽x厘米。

公开(公告)号：US5225715A

公开(公告)日：1993-07-06

申请号：US879310

申请日：1992-05-07

申请人： Takehiko Mori ,  Koichiro Aoyama

发明人： Takehiko Mori ,  Koichiro Aoyama

IPC分类号： H03K5/1252 ,  H03K5/153

CPC分类号： H03K5/153 ,  H03K5/1252

摘要： A pulse discriminating circuit discriminates narrow input pulses from an input pulse signal for eliminating output pulses corresponding to the narrow pulses from an output pulse signal thereof, and comprises a delay unit supplied with the input pulse signal for introducing predetermined time delay into propagation of the input pulse signal in synchronism with a two-phase clock signal, and an eliminating unit responsive to output signals of the delay unit and operative to produce the output pulse signal consisting of output pulses corresponding to wide input pulses, wherein the delay unit comprises early stages responsive to the two-phase clock signal for transferring the input pulse signal, and later stages responsive to a transfer signal lower in frequency than the two-phase clock signal for transferring the input pulse signal so that the predetermined time delay is prolonged without increase the stages of the delay unit.

公开(公告)号：US4292178A

公开(公告)日：1981-09-29

申请号：US62935

申请日：1979-08-02

申请人： Takehiko Mori ,  Kazuo Mori

发明人： Takehiko Mori ,  Kazuo Mori

IPC分类号： B01D29/46 ,  B01D35/12 ,  B01D29/38 ,  B01D25/34

CPC分类号： B01D29/46 ,  B01D25/34 ,  B01D35/12

摘要： A filtering apparatus includes a plurality of disc-type filtering elements stacked in parallel with each other. Each disc-type filtering element has one or more annular projections thereon facing an adjacent disc defining a filtering slit. One or more fluid passages define a filtering path therethrough. Fine particles are filtered from a fluid by the slits between the adjacent filtering elements. Adjustment of the slit widths permits trapped particles to be removed by back-washing. A power cylinder permits automatic filtering and back-washing.

摘要翻译： 过滤装置包括彼此并联堆叠的多个盘型过滤元件。 每个盘式过滤元件具有一个或多个环形突起，其面向限定过滤狭缝的相邻盘。 一个或多个流体通道限定穿过其中的过滤路径。 通过相邻过滤元件之间的狭缝，从流体中过滤细颗粒。 狭缝宽度的调整可以通过反洗来去除被捕获的颗粒。 动力缸允许自动过滤和回洗。

公开(公告)号：US4289263A

公开(公告)日：1981-09-15

申请号：US84454

申请日：1979-10-12

申请人： Takamasa Namba ,  Hidekata Yanagawa ,  Nobuo Fujimoto ,  Takehiko Mori ,  Takayoshi Yamada

发明人： Takamasa Namba ,  Hidekata Yanagawa ,  Nobuo Fujimoto ,  Takehiko Mori ,  Takayoshi Yamada

IPC分类号： G07B5/00 ,  B41J15/04 ,  B65H20/02 ,  B65H39/16 ,  B65H45/101 ,  B65H23/04 ,  G03B1/48

CPC分类号： B65H20/02

摘要： In feeding a strip of continuous forms including forms arranged in a plurality of layers and having a plurality of series of perforations extending widthwise of the strip and arranged at regular intervals lengthwise of the strip, the strip is bent at one of the series of perforations to provide a bent portion, and a member is located inwardly of the bent portion of the strip for movement toward and away from the bent portion of the strip. When the member is brought into contact with the bent portion of the strip, the upper and lower layers of the strip are brought into alignment with one another through the series of perforations.

摘要翻译： 在馈送连续形式的条带时，包括布置在多个层中的形式，并且具有沿条带的宽度方向延伸的多个一系列穿孔，并且沿条带的纵向以规则的间隔布置，条带在一系列穿孔之间弯曲至 提供弯曲部分，并且构件位于条带的弯曲部分的内侧，以朝向和远离条的弯曲部分移动。 当构件与带的弯曲部分接触时，带的上层和下层通过一系列穿孔彼此对准。

公开(公告)号：US5534638A

公开(公告)日：1996-07-09

申请号：US429009

申请日：1995-04-26

申请人： Hatsumi Mori ,  Izumi Hirabayashi ,  Shoji Tanaka ,  Takehiko Mori ,  Yusei Maruyama ,  Hiroo Inokuchi

发明人： Hatsumi Mori ,  Izumi Hirabayashi ,  Shoji Tanaka ,  Takehiko Mori ,  Yusei Maruyama ,  Hiroo Inokuchi

IPC分类号： C07D519/00 ,  C07F15/00 ,  C07F15/04 ,  H01L39/12 ,  C07D409/04

CPC分类号： C07D519/00 ,  C07F15/006 ,  C07F15/0066 ,  C07F15/0086 ,  C07F15/0093 ,  C07F15/04 ,  C07F15/045 ,  H01L39/121 ,  Y10S505/811

摘要： This describes the following five novel organic substances: Bis (ethylenedithio) tetrathiafulvalene (henceforth to be called BEDT-TTF) compounded with cyanometalate anions in what is called Tetracyano Nickel acid Bis (Ethylenedithio) Tetrathiafulvalene salt.hydrate expressed by (BEDT-TTF).sub.4 [Ni(CN).sub.4 ].H.sub.2 O, Tetracyano Platinum acid Bis (Ethylenedithio) Tetrathiafulvalene salt.hydrate that is expressed by (BEDT-TTF).sub.4 [Pt(CN).sub.4 ].H.sub.2 O, Cyanide Palladium Bis (Ethylenedithio) Tetrathiafulvalene salt that is expressed by (BEDT-TTF)-[Pd(CN).sub.2 ], Tetracyano Palladium acid Bis (Ethylenedithio) Tetrathiafulvalene salt.hydrate that is expressed by (BEDT-TFF).sub.4 [Pd(CN).sub.4 ].H.sub.2 O and Tetracyano Palladium acid Bis (Ethylenedithio) Tetrathiafulvalene salt that is represented by (BEDT-TTF).sub.4 [Pd(CN).sub.4 ]. BEDT-TTF, acting as a common constituent in the crystals of all of the above substances, provides the properties of an insulator, a metal or a superconductor. Anions that construct the framework of BEDT-TTF determine the arrangement of BEDT-TTF and thus the electronic state of the compound. It can be predicted that superconducting phenomena could be discovered in compounds of BEDT-TTF type in which there are compounded cyanometalate anions that have the tendency to form large frameworks so that the effective volume is large as in the case of the novel substances of the present invention.

摘要翻译： 这描述了以下五种新型有机物质：由（BEDT-TTF）4表示的所谓的四氰基镍酸双（乙二硫）四硫富瓦烯盐水合物与氰化金属阴离子复合的双（亚乙基二硫）四硫富瓦烯（以下称为BEDT-TTF） 由[BEDT-TTF] 4 [Pt（CN）4]·H 2 O，氰化物钯双（亚乙基二硫）四硫富瓦烯盐表示的四硫代双（亚乙基二硫）四硫富瓦烯盐水合物，[Ni（CN）4]·H 2 O， 由（BEDT-TFF）4 [Pd（CN）4]·H 2 O和四氰基钯表示的（BEDT-TTF） - [Pd（CN）2]，四氰基钯酸双（亚乙基二硫）四硫富瓦烯盐水合物 由（BEDT-TTF）4 [Pd（CN）4]表示的酸性双（亚乙基二硫）四硫富瓦烯盐。 作为所有上述物质的晶体中的共同成分的BEDT-TTF提供绝缘体，金属或超导体的性质。 构建BEDT-TTF框架的阴离子决定了BEDT-TTF的排列以及化合物的电子状态。 可以预测，在具有复合的氰化金属阴离子的BEDT-TTF型化合物中可以发现超导现象，其具有形成大框架的趋势，使得有效体积大，如在本发明的新物质的情况下 发明。

公开(公告)号：US08304762B2

公开(公告)日：2012-11-06

申请号：US12551229

申请日：2009-08-31

申请人： Takehiko Mori ,  Masato Kanno

发明人： Takehiko Mori ,  Masato Kanno

IPC分类号： H01L51/30 ,  C07D339/06

CPC分类号： C07D339/06 ,  H01L51/0068 ,  H01L51/0545 ,  H01L51/0558

摘要： To provide an organic semiconductor of tetrathiafulvalene derivative and an organic thin-film transistor formed therefrom, the tetrathiafulvalene derivative being readily formed into a stable thin film and the organic thin-film transistor having a high mobility and being driven at a low threshold voltage, an organic semiconductor includes a hexamethylenetetrathiafulvalene compound represented by the formula (1) below, and an organic thin-film transistor having a thin film obtained therefrom (where R1 and R2 each independently denote an alkyl group which may have a C1-10 branched structure).

摘要翻译： 为了提供四硫富瓦烯衍生物的有机半导体和由其形成的有机薄膜晶体管，四硫富瓦烯衍生物容易形成稳定的薄膜，并且有机薄膜晶体管具有高迁移率并以低阈值电压驱动， 有机半导体包括由下式（1）表示的六亚甲基四硫富瓦烯化合物和由其获得的薄膜的有机薄膜晶体管（其中R 1和R 2各自独立地表示可具有C 1-10分支结构的烷基）。

公开(公告)号：US20100213444A1

公开(公告)日：2010-08-26

申请号：US12551229

申请日：2009-08-31

申请人： Takehiko MORI ,  Masato Kanno

发明人： Takehiko MORI ,  Masato Kanno

IPC分类号： H01L51/30 ,  C07D339/06

CPC分类号： C07D339/06 ,  H01L51/0068 ,  H01L51/0545 ,  H01L51/0558

摘要： To provide an organic semiconductor of tetrathiafulvalene derivative and an organic thin-film transistor formed therefrom, the tetrathiafulvalene derivative being readily formed into a stable thin film and the organic thin-film transistor having a high mobility and being driven at a low threshold voltage, an organic semiconductor includes a hexamethylenetetrathiafulvalene compound represented by the formula (1) below, and an organic thin-film transistor having a thin film obtained therefrom (where R1 and R2 each independently denote an alkyl group which may have a C1-10 branched structure).

摘要翻译： 为了提供四硫富瓦烯衍生物的有机半导体和由其形成的有机薄膜晶体管，四硫富瓦烯衍生物容易形成稳定的薄膜，并且有机薄膜晶体管具有高迁移率并以低阈值电压驱动， 有机半导体包括由下式（1）表示的六亚甲基四硫富瓦烯化合物和由其获得的薄膜的有机薄膜晶体管（其中R 1和R 2各自独立地表示可具有C 1-10分支结构的烷基）。