公开(公告)号：US20100120176A1

公开(公告)日：2010-05-13

申请号：US12525999

申请日：2008-02-21

申请人： Kazuyuki Misumi ,  Masahiro Shimizu ,  Tsuyoshi Koga ,  Tasuhiko Akiyama ,  Tomohiro Murakami

发明人： Kazuyuki Misumi ,  Masahiro Shimizu ,  Tsuyoshi Koga ,  Tasuhiko Akiyama ,  Tomohiro Murakami

IPC分类号： H01L21/00

CPC分类号： H01L43/12 ,  H01L23/552 ,  H01L24/32 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L27/228 ,  H01L2224/05553 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01021 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/3025 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/05599

摘要： A method for manufacturing a magnetic memory chip device is provided with a step of writing information on a plurality of magnetic memory chips formed on a silicon wafer; a step of adhering a high permeability plate, which is composed of a material having permeability higher than that of silicon and has a thickness of 50 μm or more, on the rear surface of a silicon wafer after writing the information; and a step of dicing the silicon wafer into magnetic memory chips after adhering the high permeability plate.

摘要翻译： 一种用于制造磁存储器芯片器件的方法，具有在形成于硅晶片上的多个磁存储器芯片上写入信息的步骤; 在写入信息之后，在硅晶片的后表面上粘附由具有高于硅的磁导率并且具有50μm以上的厚度的材料构成的高透光性板的步骤; 以及在粘附高磁导率板之后将硅晶片切割成磁存储芯片的步骤。