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公开(公告)号:US20190244928A1
公开(公告)日:2019-08-08
申请号:US16387958
申请日:2019-04-18
CPC分类号: H01L24/97 , H01L21/02021 , H01L21/4821 , H01L21/4828 , H01L21/561 , H01L21/78 , H01L23/3107 , H01L23/4952 , H01L23/49541 , H01L23/49548 , H01L23/49582 , H01L24/05 , H01L24/32 , H01L24/48 , H01L24/49 , H01L24/73 , H01L2224/0401 , H01L2224/05553 , H01L2224/05599 , H01L2224/16245 , H01L2224/32245 , H01L2224/48091 , H01L2224/48247 , H01L2224/49171 , H01L2224/73265 , H01L2224/97 , H01L2924/00014 , H01L2924/10161 , H01L2924/19107 , H01L2924/00012 , H01L2224/45099 , H01L2224/29099
摘要: Methods of forming a semiconductor package. Implementations include providing a leadframe, coupling a semiconductor die or an electronic component to the leadframe, and encapsulating at least a portion of the semiconductor die or the electronic component using a mold compound leaving two or more leads of the leadframe exposed. The method may also include coating the two or more leads of the leadframe with an electrically conductive layer. The method may include fully electrically and physically singulating one or more tie bars between two or more leads of the leadframe, a lead of the two or more leads and a leadframe flag, or any combination thereof. The method may also include singulating the leadframe to form one or more semiconductor packages.
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公开(公告)号:US20190115481A1
公开(公告)日:2019-04-18
申请号:US16210131
申请日:2018-12-05
申请人: ROHM CO., LTD.
发明人: Hiroki YAMAMOTO
IPC分类号: H01L29/872 , H01L29/66 , H01L29/861 , H01L27/06 , H01L49/02 , H01L29/417 , H01L23/00 , H01L27/102 , H01L23/544 , H01L29/06 , H01L29/866 , H01L23/522 , H01L23/495 , H01L27/07
CPC分类号: H01L29/872 , H01L23/3114 , H01L23/3192 , H01L23/49551 , H01L23/49562 , H01L23/5223 , H01L23/5228 , H01L23/544 , H01L23/562 , H01L24/05 , H01L24/06 , H01L24/11 , H01L24/13 , H01L24/16 , H01L24/29 , H01L24/32 , H01L24/33 , H01L24/45 , H01L24/48 , H01L24/73 , H01L24/85 , H01L27/0255 , H01L27/0629 , H01L27/067 , H01L27/0722 , H01L27/1021 , H01L28/10 , H01L28/20 , H01L28/24 , H01L28/40 , H01L29/0615 , H01L29/0619 , H01L29/0692 , H01L29/417 , H01L29/66136 , H01L29/861 , H01L29/8611 , H01L29/866 , H01L2223/54413 , H01L2223/54433 , H01L2223/54473 , H01L2223/54493 , H01L2224/02166 , H01L2224/0401 , H01L2224/04026 , H01L2224/04042 , H01L2224/05144 , H01L2224/05553 , H01L2224/05567 , H01L2224/05624 , H01L2224/05644 , H01L2224/06181 , H01L2224/11009 , H01L2224/11464 , H01L2224/13022 , H01L2224/131 , H01L2224/16225 , H01L2224/16245 , H01L2224/291 , H01L2224/32245 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01L2224/48463 , H01L2224/73253 , H01L2224/73265 , H01L2224/85205 , H01L2224/94 , H01L2924/00014 , H01L2924/10253 , H01L2924/12032 , H01L2924/12035 , H01L2924/12036 , H01L2924/12042 , H01L2924/13091 , H01L2924/14 , H01L2924/15788 , H01L2924/181 , H01L2924/30107 , H01L2924/00012 , H01L2924/014 , H01L2224/11 , H01L2924/00 , H01L2224/45015 , H01L2924/207
摘要: A chip part includes a substrate, an element formed on the substrate, and an electrode formed on the substrate. A recess and/or projection expressing information related to the element is formed at a peripheral edge portion of the substrate.
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公开(公告)号:US20180368276A1
公开(公告)日:2018-12-20
申请号:US16124177
申请日:2018-09-06
发明人: Jian-Hong ZENG
IPC分类号: H05K7/14
CPC分类号: H05K7/1432 , H01L2224/05553 , H01L2224/0603 , H01L2224/32145 , H01L2224/32245 , H01L2224/48091 , H01L2224/48137 , H01L2224/48247 , H01L2224/48257 , H01L2224/73265 , H01L2924/00014 , H01L2924/13055 , H01L2924/13091 , H01L2924/181 , H01L2924/19104 , H01L2924/19105 , Y10T29/4913 , H01L2924/00 , H01L2924/00012
摘要: A power module includes a heat-dissipating substrate, a first planar power device and a second planar power device. The first planar power device includes a plurality of electrodes disposed on an upper surface of the first planar power device. The second planar power device includes a plurality of electrodes disposed on an upper surface of the second planar power device. Lower surfaces of the first planar power device and the second planar power device are disposed on the heat-dissipating substrate.
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公开(公告)号:US10083900B2
公开(公告)日:2018-09-25
申请号:US15496782
申请日:2017-04-25
申请人: ROHM CO., LTD.
发明人: Shoji Yasunaga , Akihiro Koga
IPC分类号: H01L23/50 , H01L23/495 , H01L23/00 , H01L23/31 , H01L23/373
CPC分类号: H01L23/49568 , H01L23/3107 , H01L23/3142 , H01L23/367 , H01L23/3731 , H01L23/4334 , H01L23/49503 , H01L23/49513 , H01L23/4952 , H01L23/49548 , H01L23/49555 , H01L23/49575 , H01L23/49582 , H01L23/52 , H01L24/06 , H01L24/29 , H01L24/32 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/73 , H01L24/78 , H01L24/85 , H01L2224/04042 , H01L2224/05552 , H01L2224/05553 , H01L2224/05644 , H01L2224/0603 , H01L2224/27013 , H01L2224/29101 , H01L2224/29339 , H01L2224/32245 , H01L2224/45015 , H01L2224/45124 , H01L2224/45144 , H01L2224/4809 , H01L2224/48091 , H01L2224/48137 , H01L2224/48139 , H01L2224/48195 , H01L2224/48247 , H01L2224/48257 , H01L2224/48465 , H01L2224/48472 , H01L2224/48997 , H01L2224/4903 , H01L2224/49171 , H01L2224/49505 , H01L2224/73265 , H01L2224/78301 , H01L2224/83385 , H01L2224/85045 , H01L2224/85181 , H01L2224/85439 , H01L2224/85951 , H01L2924/12042 , H01L2924/1305 , H01L2924/13055 , H01L2924/1306 , H01L2924/13091 , H01L2924/181 , H01L2924/1815 , H01L2924/18301 , H01L2924/19041 , H01L2924/19042 , H01L2924/19043 , H01L2924/19105 , H01L2924/351 , H01L2924/35121 , H01L2924/00014 , H01L2924/20753 , H01L2924/2076 , H01L2924/014 , H01L2924/00012 , H01L2924/00
摘要: A semiconductor device includes two or more semiconductor elements, a lead with island portions on which the semiconductor elements are mounted, a heat dissipation member for dissipating heat from the island portions, a bonding layer bonding the island portions and the heat dissipation member, and a sealing resin covering the semiconductor elements, the island portions and a part of the heat dissipation member. The bonding layer includes mutually spaced individual regions provided for the island portions, respectively.
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公开(公告)号:US10050011B2
公开(公告)日:2018-08-14
申请号:US15414919
申请日:2017-01-25
CPC分类号: H01L24/85 , H01L21/4853 , H01L21/50 , H01L23/3107 , H01L23/49838 , H01L24/09 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/73 , H01L24/78 , H01L2224/05553 , H01L2224/32225 , H01L2224/451 , H01L2224/45144 , H01L2224/45147 , H01L2224/48095 , H01L2224/48195 , H01L2224/48227 , H01L2224/49175 , H01L2224/73265 , H01L2224/78301 , H01L2224/83192 , H01L2224/8512 , H01L2224/8513 , H01L2224/85181 , H01L2224/92247 , H01L2924/07802 , H01L2924/12042 , H01L2924/1306 , H01L2924/13091 , H01L2924/15311 , H01L2924/181 , H01L2924/00012 , H01L2924/00 , H01L2924/00014
摘要: Provided is a semiconductor device having improved reliability. In the semiconductor device in an embodiment, a mark is provided correspondingly to the bonding area of a belt-like wiring exposed from an opening provided in a solder resist. As a result, in an alignment step for the wire bonding area, the coordinate position of the wire bonding area can be adjusted using not the end portion of the opening formed in the solder resist, but the mark formed correspondingly to the wire bonding area as a reference. Also, in the semiconductor device in the embodiment, the mark serving as a characteristic pattern is formed. This allows the wire bonding area to be adjusted based on camera recognition.
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公开(公告)号:US10037935B1
公开(公告)日:2018-07-31
申请号:US15499355
申请日:2017-04-27
申请人: NXP USA, Inc.
发明人: Xingshou Pang , Zhigang Bai , Jinzhong Yao , Yuan Zang
IPC分类号: H01L23/495 , H01L23/31 , H01L21/48 , H01L21/56
CPC分类号: H01L23/49555 , H01L21/4825 , H01L21/4842 , H01L21/565 , H01L23/3107 , H01L23/49503 , H01L23/49513 , H01L23/49551 , H01L2224/05553
摘要: Embodiments of a lead frame for a packaged semiconductor device are provided, one embodiment including: a die pad; a first row of active lead fingers that are laterally separated from one another along their entire length; a package body perimeter that indicates placement of a package body of the packaged semiconductor device, wherein the package body perimeter is located laterally around the die pad; a first dummy lead finger positioned in parallel next to an initial active lead finger of the first row of active lead fingers, wherein the first dummy lead finger and the initial active lead finger are laterally separated from one another along their entire length, and wherein the first dummy lead finger is separated from the package body perimeter by a gap distance; and a first tie bar connected to an outside edge of the first dummy lead finger.
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公开(公告)号:US20180204788A1
公开(公告)日:2018-07-19
申请号:US15885336
申请日:2018-01-31
发明人: Yuichiro Ikeda , Satoshi Kotani
IPC分类号: H01L23/495 , H01L23/31 , H01L23/544 , H01L23/00 , H01L21/56
CPC分类号: H01L23/49541 , H01L21/565 , H01L23/3107 , H01L23/544 , H01L24/05 , H01L24/06 , H01L24/29 , H01L24/32 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/73 , H01L24/85 , H01L24/92 , H01L2223/5446 , H01L2224/04042 , H01L2224/05553 , H01L2224/05554 , H01L2224/29101 , H01L2224/32225 , H01L2224/32245 , H01L2224/45124 , H01L2224/45144 , H01L2224/45147 , H01L2224/48095 , H01L2224/48227 , H01L2224/48228 , H01L2224/48247 , H01L2224/49113 , H01L2224/49175 , H01L2224/73265 , H01L2224/83101 , H01L2224/92247 , H01L2224/94 , H01L2924/10162 , H01L2924/15311 , H01L2924/15747 , H01L2924/181 , H01L2924/1815 , H01L2924/3862 , H01L2924/00012 , H01L2224/03 , H01L2924/00014 , H01L2924/014 , H01L2924/00
摘要: A semiconductor device PKG includes a semiconductor chip CP, a lead LD3, a wire BW5 electrically connecting a pad electrode PD2 of the semiconductor chip CP to the lead LD3, a wire BW3 electrically connecting a pad electrode PD3 of the semiconductor chip CP to the lead LD3, and a sealing body sealing them with a resin. The semiconductor chip CP includes internal circuits 5b and 5c, and a switch circuit unit SW. Signal transmission is possible between the internal circuit 5c and the pad electrode PD3. The switch circuit unit SW is a circuit capable of being set in a first state in which signal transmission is possible between the internal circuit 5b and the pad electrode PD2, and in a second state in which signal transmission is not possible between the internal circuit 5b and the pad electrode PD2. The switch circuit unit SW is fixed to the second state during operation of the semiconductor device PKG.
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公开(公告)号:US20180190601A1
公开(公告)日:2018-07-05
申请号:US15905104
申请日:2018-02-26
发明人: Shinya Hitomi , Hidenori Obiya , Reiji Nakajima
IPC分类号: H01L23/66 , H03F3/195 , H03F3/213 , H01L23/04 , H01L23/10 , H01L23/538 , H01L23/552 , H03F3/21 , H01L25/16
CPC分类号: H01L23/66 , H01L23/04 , H01L23/055 , H01L23/10 , H01L23/16 , H01L23/5386 , H01L23/552 , H01L24/05 , H01L24/16 , H01L24/48 , H01L24/49 , H01L25/162 , H01L25/165 , H01L2223/6655 , H01L2223/6677 , H01L2224/05553 , H01L2224/16225 , H01L2224/16227 , H01L2224/48227 , H01L2224/49111 , H01L2224/49175 , H01L2924/00014 , H01L2924/1421 , H01L2924/14215 , H01L2924/15311 , H01L2924/19041 , H01L2924/19042 , H01L2924/19105 , H01L2924/3025 , H03F3/195 , H03F3/211 , H03F3/213 , H03F3/245 , H03F2200/111 , H03F2200/168 , H03F2200/222 , H03F2200/294 , H03F2200/411 , H03F2200/451 , H03F2203/21103 , H03F2203/21112 , H03F2203/21157 , H03H7/38 , H03H9/0542 , H03H9/0547 , H04B1/0458 , H04B1/18 , H04B1/38 , H01L2224/13099 , H01L2224/45099 , H01L2224/05599
摘要: A high-frequency module (1) includes a first substrate (101), a second substrate (102) that faces the first substrate (101), a support (103) that supports the first substrate (101) and the second substrate (102), and a plurality of high-frequency circuit components arranged in internal space formed by the first substrate (101), the second substrate (102), and the support and on both of facing principal faces of the first substrate (101) and the second substrate (102), and the plurality of high-frequency circuit components include a power amplifier element that constitutes a power amplifier circuit (16).
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公开(公告)号:US20180182690A1
公开(公告)日:2018-06-28
申请号:US15851007
申请日:2017-12-21
申请人: Semiconductor Manufacturing International (Shanghai) Corporation , Semiconductor Manufacturing International (Beijing) Corporation
发明人: Li Zhong JIN , Li Hui LU , Chun Chao FEI , Po Yuan CHIANG , Ya Ping WANG
IPC分类号: H01L23/49 , H01L23/485 , H01L23/00 , H01L21/02
CPC分类号: H01L23/49 , H01L21/02123 , H01L23/485 , H01L24/03 , H01L24/05 , H01L24/45 , H01L24/48 , H01L24/85 , H01L2224/02166 , H01L2224/0345 , H01L2224/0361 , H01L2224/05098 , H01L2224/05166 , H01L2224/05181 , H01L2224/05552 , H01L2224/05553 , H01L2224/05554 , H01L2224/05555 , H01L2224/05557 , H01L2224/05558 , H01L2224/05624 , H01L2224/45124 , H01L2224/45139 , H01L2224/45144 , H01L2224/45147 , H01L2224/45184 , H01L2224/48463 , H01L2924/10252 , H01L2924/10253 , H01L2924/10271 , H01L2924/10272 , H01L2924/1032 , H01L2924/10329 , H01L2924/1033 , H01L2924/00014 , H01L2924/01013 , H01L2924/01029 , H01L2924/01008
摘要: A packaging structure and a method for fabricating the packaging structure are provided. The packaging structure includes a base substrate including a solder pad body region and a trench region adjacent to and around the solder pad body region. The packaging structure also includes a passivation layer on a surface of the base substrate and exposing the solder pad body region and the trench region. In addition, the packaging structure includes a main body solder pad on the solder pad body region of the base substrate, and one or more trenches on the trench region of the base substrate and between the passivation layer and the main body solder pad. Further, the packaging structure includes a bonding conductive wire having one end connected to the main body solder pad.
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公开(公告)号:US09997499B2
公开(公告)日:2018-06-12
申请号:US15664022
申请日:2017-07-31
发明人: Hiroshi Kuroda , Hideo Koike
IPC分类号: H01L25/065 , H04B5/00 , H01L23/00 , H04B7/24 , H01L23/544 , H01L23/31 , H01L25/18
CPC分类号: H01L25/0657 , H01L23/3128 , H01L23/544 , H01L24/06 , H01L24/27 , H01L24/29 , H01L24/32 , H01L24/33 , H01L24/48 , H01L24/49 , H01L24/73 , H01L24/80 , H01L24/83 , H01L24/85 , H01L24/92 , H01L24/97 , H01L25/18 , H01L2223/5442 , H01L2223/54486 , H01L2224/04042 , H01L2224/05553 , H01L2224/0612 , H01L2224/06177 , H01L2224/2732 , H01L2224/27334 , H01L2224/2919 , H01L2224/32145 , H01L2224/32225 , H01L2224/33181 , H01L2224/4809 , H01L2224/48096 , H01L2224/48149 , H01L2224/48227 , H01L2224/48453 , H01L2224/48458 , H01L2224/48465 , H01L2224/49171 , H01L2224/49173 , H01L2224/73215 , H01L2224/73265 , H01L2224/83 , H01L2224/8385 , H01L2224/85 , H01L2224/85181 , H01L2224/85444 , H01L2224/92 , H01L2224/92147 , H01L2224/92247 , H01L2224/97 , H01L2225/0651 , H01L2225/06531 , H01L2924/00014 , H01L2924/12042 , H01L2924/1306 , H01L2924/13091 , H01L2924/15311 , H01L2924/15313 , H01L2924/181 , H01L2924/1815 , H04B5/0075 , H04B7/24 , H01L2924/00 , H01L2224/45099 , H01L2924/00012
摘要: Disclosed is a semiconductor device that is capable of handling multiple different high-frequency contactless communication modes and that is formed by a multi-chip structure. A first semiconductor chip, which performs interface control of high-frequency contactless communication and data processing of communications data, is mounted on a wiring board; and a second semiconductor chip, which performs another data processing of the communication data, is mounted on the first semiconductor chip. In this case, transmission pads in the first semiconductor chip are arranged at positions farther from a periphery of the chip than those of receiving pads, and the second semiconductor chip is mounted by being biased on the first semiconductor chip so as to keep away the transmission pads.
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