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公开(公告)号：US20050284259A1
公开(公告)日：2005-12-29
申请号：US11196156
申请日：2005-08-03
申请人： Harry Rosenberg , Bahri Ozturk , Guangxin Wang , Wesley LaRue
发明人： Harry Rosenberg , Bahri Ozturk , Guangxin Wang , Wesley LaRue
IPC分类号： C01G35/00 , C22B3/04 , C22B5/00 , C22B5/04 , C22B9/22 , C22B34/24 , C22C27/02 , C23C14/14 , C23C14/34
CPC分类号： B22F1/0003 , B22F9/30 , B22F2999/00 , C01G35/006 , C22B5/00 , C22B34/24 , C22C27/02 , C23C14/3414 , H01G9/042 , Y10S438/923 , Y10S438/968 , B22F9/22 , B22F2201/00 , B22F2201/20
摘要： Described is a method for producing high purity tantalum, the high purity tantalum so produced and sputtering targets of high purity tantalum. The method involves purifying starting materials followed by subsequent refining into high purity tantalum.
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公开(公告)号：US06955938B2
公开(公告)日：2005-10-18
申请号：US10229888
申请日：2002-08-27
申请人： Harry Rosenberg , Bahri Ozturk , Guangxin Wang , Wesley LaRue
发明人： Harry Rosenberg , Bahri Ozturk , Guangxin Wang , Wesley LaRue
IPC分类号： C01G35/00 , C22B3/04 , C22B5/00 , C22B5/04 , C22B9/22 , C22B34/24 , C22C27/02 , C23C14/14 , C23C14/34 , H01L21/00
CPC分类号： B22F1/0003 , B22F9/30 , B22F2999/00 , C01G35/006 , C22B5/00 , C22B34/24 , C22C27/02 , C23C14/3414 , H01G9/042 , Y10S438/923 , Y10S438/968 , B22F9/22 , B22F2201/00 , B22F2201/20
摘要： Described is a method for producing high purity tantalum, the high purity tantalum so produced and sputtering targets of high purity tantalum. The method involves purifying starting materials followed by subsequent refining into high purity tantalum.
摘要翻译： 描述了一种生产高纯度钽，所制造的高纯度钽和高纯度钽的溅射靶的方法。 该方法包括纯化原料，随后精制成高纯度钽。
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公开(公告)号：US06566161B1
公开(公告)日：2003-05-20
申请号：US09717476
申请日：2000-11-20
申请人： Harry Rosenberg , Bahri Ozturk , Guangxin Wang , Wesley LaRue
发明人： Harry Rosenberg , Bahri Ozturk , Guangxin Wang , Wesley LaRue
IPC分类号： H01L2100
CPC分类号： B22F1/0003 , B22F9/30 , B22F2999/00 , C01G35/006 , C22B5/00 , C22B34/24 , C22C27/02 , C23C14/3414 , H01G9/042 , Y10S438/923 , Y10S438/968 , B22F9/22 , B22F2201/00 , B22F2201/20
摘要： Described is a method for producing high purity tantalum, the high purity tantalum so produced and sputtering targets of high purity tantalum. The method involves purifying starting materials followed by subsequent refining into high purity tantalum.
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公开(公告)号：US06323055B1
公开(公告)日：2001-11-27
申请号：US09316777
申请日：1999-05-21
申请人： Harry Rosenberg , Bahri Ozturk , Guangxin Wang , Wesley LaRue
发明人： Harry Rosenberg , Bahri Ozturk , Guangxin Wang , Wesley LaRue
IPC分类号： H01L2100
CPC分类号： B22F1/0003 , B22F9/30 , B22F2999/00 , C01G35/006 , C22B5/00 , C22B34/24 , C22C27/02 , C23C14/3414 , H01G9/042 , Y10S438/923 , Y10S438/968 , B22F9/22 , B22F2201/00 , B22F2201/20
摘要： Described is a method for producing high purity tantalum, the high purity tantalum so produced and sputtering targets of high purity tantalum. The method involves purifying starting materials followed by subsequent refining into high purity tantalum.
摘要翻译： 描述了一种生产高纯度钽，所制造的高纯度钽和高纯度钽的溅射靶的方法。 该方法包括纯化原料，随后精制成高纯度钽。
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公开(公告)号：US07102229B2
公开(公告)日：2006-09-05
申请号：US11202743
申请日：2005-08-12
申请人： Harry Rosenberg , Bahri Ozturk , Guangxin Wang , Wesley LaRue
发明人： Harry Rosenberg , Bahri Ozturk , Guangxin Wang , Wesley LaRue
CPC分类号： B22F1/0003 , B22F9/30 , B22F2999/00 , C01G35/006 , C22B5/00 , C22B34/24 , C22C27/02 , C23C14/3414 , H01G9/042 , Y10S438/923 , Y10S438/968 , B22F9/22 , B22F2201/00 , B22F2201/20
摘要： Described is a method for producing high purity tantalum, the high purity tantalum so produced and sputtering targets of high purity tantalum. The method involves purifying starting materials followed by subsequent refining into high purity tantalum.
摘要翻译： 描述了一种生产高纯度钽，所制造的高纯度钽和高纯度钽的溅射靶的方法。 该方法包括纯化原料，随后精制成高纯度钽。
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公开(公告)号：US06958257B2
公开(公告)日：2005-10-25
申请号：US10053201
申请日：2002-01-15
申请人： Harry Rosenberg , Bahri Ozturk , Guangxin Wang , Wesley LaRue
发明人： Harry Rosenberg , Bahri Ozturk , Guangxin Wang , Wesley LaRue
IPC分类号： C01G35/00 , C22B3/04 , C22B5/00 , C22B5/04 , C22B9/22 , C22B34/24 , C22C27/02 , C23C14/14 , C23C14/34 , H01L21/00
CPC分类号： B22F1/0003 , B22F9/30 , B22F2999/00 , C01G35/006 , C22B5/00 , C22B34/24 , C22C27/02 , C23C14/3414 , H01G9/042 , Y10S438/923 , Y10S438/968 , B22F9/22 , B22F2201/00 , B22F2201/20
摘要： Described is a method for producing high purity tantalum, the high purity tantalum so produced and sputtering targets of high purity tantalum. The method involves purifying starting materials followed by subsequent refining into high purity tantalum.
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公开(公告)号：US20050284546A1
公开(公告)日：2005-12-29
申请号：US11202743
申请日：2005-08-12
申请人： Harry Rosenberg , Bahri Ozturk , Guangxin Wang , Wesley LaRue
发明人： Harry Rosenberg , Bahri Ozturk , Guangxin Wang , Wesley LaRue
IPC分类号： C01G35/00 , C22B3/04 , C22B5/00 , C22B5/04 , C22B9/22 , C22B34/24 , C22C27/02 , C23C14/14 , C23C14/34
CPC分类号： B22F1/0003 , B22F9/30 , B22F2999/00 , C01G35/006 , C22B5/00 , C22B34/24 , C22C27/02 , C23C14/3414 , H01G9/042 , Y10S438/923 , Y10S438/968 , B22F9/22 , B22F2201/00 , B22F2201/20
摘要： Described is a method for producing high purity tantalum, the high purity tantalum so produced and sputtering targets of high purity tantalum. The method involves purifying starting materials followed by subsequent refining into high purity tantalum.
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