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    Wafer-level transfer of membranes with gas-phase etching and wet etching methods
    3.
    发明申请
    Wafer-level transfer of membranes with gas-phase etching and wet etching methods 有权
    用气相蚀刻和湿式蚀刻方法进行膜片转移

    公开(公告)号：US20040063322A1

    公开(公告)日：2004-04-01

    申请号：US10678359

    申请日：2003-10-02

    发明人： Eui-Hyeok Yang

    IPC分类号： H01L021/302 ,  H01L021/461

    CPC分类号： B81C3/001 ,  B81B2203/0127 ,  B81B2203/0361 ,  B81C1/00357 ,  B81C2201/019 ,  B81C2201/0191 ,  B81C2203/038 ,  H01L21/2007 ,  H01L21/76251 ,  Y10S438/928 ,  Y10S438/968

    摘要： Techniques for transferring a membrane from one wafer to another wafer to form integrated semiconductor devices. In one implementation, a carrier wafer is fabricated to include a membrane on one side of the carrier wafer. The membrane on the carrier wafer is then bond to a surface of a different, device wafer by a plurality of joints. Next, the carrier wafer is etched away by a dry etching chemical to expose the membrane and to leave said membrane on the device wafer. Transfer of membranes with a wet etching process is also described.

    摘要翻译： 将膜从一个晶片转移到另一个晶片以形成集成的半导体器件的技术。 在一个实施方式中，制造载体晶片以在载体晶片的一侧包括膜。 然后通过多个接头将载体晶片上的膜结合到不同的器件晶片的表面。 接下来，通过干蚀刻化学品蚀刻载体晶片以暴露膜并将所述膜留在器件晶片上。 还描述了用湿蚀刻工艺转移膜。

    Forming a conductive, protective layer for multilayer metallization
    5.
    发明授权
    Forming a conductive, protective layer for multilayer metallization 失效
    形成用于多层金属化的导电保护层

    公开(公告)号：US4580332A

    公开(公告)日：1986-04-08

    申请号：US593335

    申请日：1984-03-26

    申请人： Yan A. Borodovsky

    发明人： Yan A. Borodovsky

    IPC分类号： H01L21/768 ,  H01L23/532 ,  H01L21/58

    CPC分类号： H01L21/76886 ,  H01L23/53271 ,  H01L2924/0002 ,  Y10S438/945 ,  Y10S438/968 ,  Y10S438/97

    摘要： An improved integrated circuit structure, and method of making the structure, is disclosed wherein at least one metallization layer is coated with a conductive indium arsenide layer during production of the structure and an upper metallization layer subsequently is applied to the structure wherein at least a portion of the subsequent metallization layer is in ohmic contact with the conductive indium arsenide layer whereby the lower metallization layer is protected by the intervening indium arsenide layer during subsequent removal of the upper metallization layer if subsequent reworking of the structure becomes necessary. The use of the indium arsenide layer over a metallization layer further enhances the construction process by the use of its antireflective properties during patterning of a photoresist applied over the indium arsenide layer.

    摘要翻译： 公开了一种改进的集成电路结构和制造该结构的方法，其中至少一个金属化层在该结构的制造期间被导电的砷化铟层涂覆，并且上部金属化层随后被施加到该结构，其中至少一部分 随后的金属化层与导电铟砷化物层欧姆接触，由此如果随后的结构的再加工变得必要，则随后去除上部金属化层期间，下部金属化层被中间的砷化铟层保护。 在金属化层上使用砷化铟层通过在对砷化铟层施加的光刻胶进行图案化期间通过使用其抗反射特性进一步增强了施工过程。

    Rare earth metal member and making method
    7.
    发明授权
    Rare earth metal member and making method 有权
    稀土金属构件及制作方法

    公开(公告)号：US07674427B2

    公开(公告)日：2010-03-09

    申请号：US11476066

    申请日：2006-06-28

    申请人： Toshihiko Tsukatani ,  Hajime Nakano ,  Takao Maeda

    发明人： Toshihiko Tsukatani ,  Hajime Nakano ,  Takao Maeda

    IPC分类号： C22C28/00 ,  C23G1/02 ,  E01B9/10 ,  F16B33/00

    CPC分类号： H01J37/32431 ,  C22B59/00 ,  C22C28/00 ,  C23G1/10 ,  H01J37/32477 ,  H01J2237/022 ,  Y10S438/968

    摘要： By using a rare earth metal having a minimal content of impurity metal element, machining it into a member and cleaning with an organic acid-base capping agent, there is obtained a rare earth metal member composed entirely of a rare earth metal and containing not more than 100 ppm of impurity metal element in a sub-surface zone, which member is characterized by a high surface purity, a large grain size, minimized grain boundaries, and improved halogen resistance or corrosion resistance.

    摘要翻译： 通过使用杂质金属元素含量最少的稀土金属，将其加工成部件并用有机酸基封盖剂进行清洗，得到完全由稀土金属组成的稀土金属部件，并且不含有 在表面区域中超过100ppm的杂质金属元素，其特征在于高表面纯度，大晶粒尺寸，最小化的晶界和改善的耐卤素性或耐腐蚀性。

    Wafer-level transfer of membranes with gas-phase etching and wet etching methods
    8.
    发明授权
    Wafer-level transfer of membranes with gas-phase etching and wet etching methods 有权
    用气相蚀刻和湿式蚀刻方法进行膜片转移

    公开(公告)号：US07268081B2

    公开(公告)日：2007-09-11

    申请号：US10678359

    申请日：2003-10-02

    申请人： Eui-Hyeok Yang

    发明人： Eui-Hyeok Yang

    IPC分类号： H01L21/302

    CPC分类号： B81C3/001 ,  B81B2203/0127 ,  B81B2203/0361 ,  B81C1/00357 ,  B81C2201/019 ,  B81C2201/0191 ,  B81C2203/038 ,  H01L21/2007 ,  H01L21/76251 ,  Y10S438/928 ,  Y10S438/968

    摘要： Techniques for transferring a membrane from one wafer to another wafer to form integrated semiconductor devices. In one implementation, a carrier wafer is fabricated to include a membrane on one side of the carrier wafer. The membrane on the carrier wafer is then bond to a surface of a different, device wafer by a plurality of joints. Next, the carrier wafer is etched away by a dry etching chemical to expose the membrane and to leave said membrane on the device wafer. Transfer of membranes with a wet etching process is also described.

    摘要翻译： 将膜从一个晶片转移到另一个晶片以形成集成的半导体器件的技术。 在一个实施方式中，制造载体晶片以在载体晶片的一侧包括膜。 然后通过多个接头将载体晶片上的膜结合到不同的器件晶片的表面。 接下来，通过干蚀刻化学品蚀刻载体晶片以暴露膜并将所述膜留在器件晶片上。 还描述了用湿蚀刻工艺转移膜。

    Rare earth metal member and making method
    9.
    发明申请
    Rare earth metal member and making method 有权
    稀土金属构件及制作方法

    公开(公告)号：US20070003790A1

    公开(公告)日：2007-01-04

    申请号：US11476066

    申请日：2006-06-28

    申请人： Toshihiko Tsukatani ,  Hajime Nakano ,  Takao Maeda

    发明人： Toshihiko Tsukatani ,  Hajime Nakano ,  Takao Maeda

    IPC分类号： B32B19/00

    CPC分类号： H01J37/32431 ,  C22B59/00 ,  C22C28/00 ,  C23G1/10 ,  H01J37/32477 ,  H01J2237/022 ,  Y10S438/968

    摘要： By using a rare earth metal having a minimal content of impurity metal element, machining it into a member and cleaning with an organic acid-base capping agent, there is obtained a rare earth metal member composed entirely of a rare earth metal and containing not more than 100 ppm of impurity metal element in a sub-surface zone, which member is characterized by a high surface purity, a large grain size, minimized grain boundaries, and improved halogen resistance or corrosion resistance.

    摘要翻译： 通过使用杂质金属元素含量最少的稀土金属，将其加工成部件并用有机酸基封盖剂进行清洗，得到完全由稀土金属组成的稀土金属部件，并且不含有 在表面区域中超过100ppm的杂质金属元素，其特征在于高表面纯度，大晶粒尺寸，最小化的晶界和改善的耐卤素性或耐腐蚀性。