公开(公告)号：US08767780B2

公开(公告)日：2014-07-01

申请号：US14112435

申请日：2012-04-19

Applicant: Wojciech Knap ,  Oleg Klimenko ,  Yuri Mityagin ,  Pierre Solignac

Inventor： Wojciech Knap ,  Oleg Klimenko ,  Yuri Mityagin ,  Pierre Solignac

IPC: H01S3/30 ,  H01S3/04 ,  H01S3/097

CPC classification number: H01S5/02469 ,  B82Y20/00 ,  H01S3/08068 ,  H01S5/02288 ,  H01S5/02423 ,  H01S5/14 ,  H01S5/3223 ,  H01S5/3402 ,  H01S2302/02

Abstract: A laser device for emitting waves in a frequency range belonging to the terahertz range, includes the following, in combination: a wave guide extending longitudinally along an axis A-A′; a superconducting coil arranged coaxially to the wave guide and arranged at a first end of the wave guide; a p-Ge p-doped germanium crystal arranged inside the coil such that the turns of the superconducting coil at least partially surround the p-Ge crystal; a cooling device containing a coolant, the superconducting coil and the p-Ge crystal being arranged in the cooling device, and the wave guide partially extending outside the cooling device; and removing the coolant from the wave guide.

Abstract translation: 用于在属于太赫兹范围的频率范围内发射波的激光装置包括以下组合：沿轴线A-A'纵向延伸的波导; 一个与波导同轴布置并布置在波导的第一端的超导线圈; 布置在线圈内部的p-Ge p掺杂锗晶体，使得超导线圈的匝至少部分地围绕p-Ge晶体; 包含冷却剂的冷却装置，超导线圈和p-Ge晶体布置在冷却装置中，波导部分地延伸到冷却装置的外部; 并从波导管中移除冷却剂。

公开(公告)号：US09018683B2

公开(公告)日：2015-04-28

申请号：US13991407

申请日：2010-12-03

Applicant: Taiichi Otsuji ,  Viacheslav Popov ,  Wojciech Knap ,  Yahya Moubarak Meziani ,  Nina Diakonova ,  Dominique Coquillat ,  Frederic Teppe ,  Denis Fateev ,  Jesus Enrique Velazquez Perez

Inventor： Taiichi Otsuji ,  Viacheslav Popov ,  Wojciech Knap ,  Yahya Moubarak Meziani ,  Nina Diakonova ,  Dominique Coquillat ,  Frederic Teppe ,  Denis Fateev ,  Jesus Enrique Velazquez Perez

IPC: H01L29/66 ,  H01L31/02 ,  H01L29/423 ,  H01L29/778 ,  H01L31/113

CPC classification number: H01L31/02 ,  H01L29/42316 ,  H01L29/7787 ,  H01L31/1136

Abstract: The purpose of the present invention is to improve the efficiency of conversion between terahertz electromagnetic wave energy and direct current energy via plasma waves in a terahertz electromagnetic wave conversion device with a field effect transistor structure. This invention has an HEMT structure having a substrate, an electron transit layer, an electron supply layer, a source and a drain, and includes a first and second group of gates. The gate length of each finger of the first group of gates is narrower than the gate length of each finger of the second group of gates, and each finger of each group of gates is disposed between the source and the drain on the same cycle. A first and second distance from each finger of the first group of gates to two fingers of the second group of gates adjacent to each finger are unequal lengths.

Abstract translation: 本发明的目的是通过具有场效应晶体管结构的太赫兹电磁波转换装置中的等离子体波，提高太赫兹电磁波能量与直流能量之间的转换效率。 本发明具有HEMT结构，其具有基板，电子转移层，电子供给层，源极和漏极，并且包括第一和第二组栅极。 第一组门的每个手指的栅极长度比第二组栅极的每个手指的栅极长度窄，并且每组栅极的每个指状物在同一周期上设置在源极和漏极之间。 从第一组门的每个手指到与每个手指相邻的第二组门的两个手指的第一和第二距离是不相等的长度。

公开(公告)号：US20140045700A1

公开(公告)日：2014-02-13

申请号：US14112435

申请日：2012-04-19

Applicant: Wojciech Knap ,  Oleg Klimenko ,  Yuri Mityagin ,  Pierre Solignac

Inventor： Wojciech Knap ,  Oleg Klimenko ,  Yuri Mityagin ,  Pierre Solignac

IPC: H01S5/024

CPC classification number: H01S5/02469 ,  B82Y20/00 ,  H01S3/08068 ,  H01S5/02288 ,  H01S5/02423 ,  H01S5/14 ,  H01S5/3223 ,  H01S5/3402 ,  H01S2302/02

Abstract: A laser device for emitting waves in a frequency range belonging to the terahertz range, includes the following, in combination: a wave guide extending longitudinally along an axis A-A′; a superconducting coil arranged coaxially to the wave guide and arranged at a first end of the wave guide; a p-Ge p-doped germanium crystal arranged inside the coil such that the turns of the superconducting coil at least partially surround the p-Ge crystal; a cooling device containing a coolant, the superconducting coil and the p-Ge crystal being arranged in the cooling device, and the wave guide partially extending outside the cooling device; and removing the coolant from the wave guide.

Abstract translation: 用于在属于太赫兹范围的频率范围内发射波的激光装置包括以下组合：沿轴线A-A'纵向延伸的波导; 一个与波导同轴布置并布置在波导的第一端的超导线圈; 布置在线圈内部的p-Ge p掺杂锗晶体，使得超导线圈的匝至少部分地围绕p-Ge晶体; 包含冷却剂的冷却装置，超导线圈和p-Ge晶体布置在冷却装置中，波导部分地延伸到冷却装置的外部; 并从波导管中移除冷却剂。

公开(公告)号：US20130277716A1

公开(公告)日：2013-10-24

申请号：US13991407

申请日：2010-12-03

Applicant: Taiichi Otsuji ,  Viacheslav Popov ,  Wojciech Knap ,  Yahya Moubarak Meziani ,  Nina Diakonova ,  Dominique Coquillat ,  Frederic Teppe ,  Denis Fateev ,  Jesus Enrique Velazquez Perez

Inventor： Taiichi Otsuji ,  Viacheslav Popov ,  Wojciech Knap ,  Yahya Moubarak Meziani ,  Nina Diakonova ,  Dominique Coquillat ,  Frederic Teppe ,  Denis Fateev ,  Jesus Enrique Velazquez Perez

IPC: H01L31/02

CPC classification number: H01L31/02 ,  H01L29/42316 ,  H01L29/7787 ,  H01L31/1136

Abstract: The purpose of the present invention is to improve the efficiency of conversion between terahertz electromagnetic wave energy and direct current energy via plasma waves in a terahertz electromagnetic wave conversion device with a field effect transistor structure. This invention has an HEMT structure having a substrate, an electron transit layer, an electron supply layer, a source and a drain, and includes a first and second group of gates. The gate length of each finger of the first group of gates is narrower than the gate length of each finger of the second group of gates, and each finger of each group of gates is disposed between the source and the drain on the same cycle. A first and second distance from each finger of the first group of gates to two fingers of the second group of gates adjacent to each finger are unequal lengths.

Abstract translation: 本发明的目的是通过具有场效应晶体管结构的太赫兹电磁波转换装置中的等离子体波，提高太赫兹电磁波能量与直流能量之间的转换效率。 本发明具有HEMT结构，其具有基板，电子转移层，电子供给层，源极和漏极，并且包括第一和第二组栅极。 第一组门的每个手指的栅极长度比第二组栅极的每个手指的栅极长度窄，并且每组栅极的每个指状物在相同周期上设置在源极和漏极之间。 从第一组门的每个手指到与每个手指相邻的第二组门的两个手指的第一和第二距离是不相等的长度。