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    Multilayer silicon nitride deposition for a semiconductor device
    1.
    发明申请
    Multilayer silicon nitride deposition for a semiconductor device 审中-公开
    用于半导体器件的多层氮化硅沉积

    公开(公告)号：US20080173908A1

    公开(公告)日：2008-07-24

    申请号：US11655461

    申请日：2007-01-19

    Applicant: Kurt H. Junker ,  Paul A. Grudowski ,  Xiang-Zheng Bo ,  Tien Ying Luo

    Inventor： Kurt H. Junker ,  Paul A. Grudowski ,  Xiang-Zheng Bo ,  Tien Ying Luo

    IPC: H01L29/78 ,  H01L21/3105 ,  H01L21/8238

    CPC classification number: H01L21/02348 ,  H01L21/0217 ,  H01L21/02274 ,  H01L21/02351 ,  H01L21/3105 ,  H01L21/3185 ,  H01L21/823807 ,  H01L29/7843

    Abstract: A method for making a semiconductor device is provided which comprises (a) providing a semiconductor structure equipped with a gate and a channel region, said channel region being associated with the gate; (b) depositing a first sub-layer (131) of a first stressor material over the semiconductor structure, said first stressor material containing silicon-nitrogen bonds and imparting tensile stress to the semiconductor structure; (c) curing the first stressor material through exposure to a radiation source; (d) depositing a second sub-layer (133) of a second stressor material over the first sub-layer, said second stressor material containing silicon-nitrogen bonds and imparting tensile stress to the semiconductor structure; and (e) curing the second sub-layer of stressor material through exposure to a radiation source.

    Abstract translation: 提供了制造半导体器件的方法，其包括（a）提供配备有栅极和沟道区域的半导体结构，所述沟道区域与栅极相关联; （b）在半导体结构上沉积第一应力源材料的第一子层（131），所述第一应力源材料含有硅 - 氮键并向半导体结构施加拉伸应力; （c）通过暴露于辐射源固化第一应激物材料; （d）在所述第一子层上沉积第二应力源材料的第二子层（133），所述第二应力源材料含有硅 - 氮键并向所述半导体结构施加拉伸应力; 和（e）通过暴露于辐射源固化应力源材料的第二子层。

    Multilayer silicon nitride deposition for a semiconductor device
    2.
    发明申请
    Multilayer silicon nitride deposition for a semiconductor device 有权
    用于半导体器件的多层氮化硅沉积

    公开(公告)号：US20080173986A1

    公开(公告)日：2008-07-24

    申请号：US12008607

    申请日：2008-01-11

    Applicant: Kurt H. Junker ,  Paul A. Grudowski ,  Xiang-Zheng Bo ,  Tien Ying Luo

    Inventor： Kurt H. Junker ,  Paul A. Grudowski ,  Xiang-Zheng Bo ,  Tien Ying Luo

    IPC: H01L23/58 ,  H01L21/31

    CPC classification number: H01L21/823807 ,  H01L29/78 ,  H01L29/7843 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: A method for making a semiconductor device is provided which comprises (a) providing a semiconductor structure equipped with a gate (209) and a channel region, said channel region being associated with the gate; (b) depositing a first sub-layer (231) of a first stressor material over the semiconductor structure, said first stressor material containing silicon-nitrogen bonds and imparting tensile stress to the semiconductor structure; (c) curing the first stressor material through exposure to a radiation source; (d) depositing a second sub-layer (233) of a second stressor material over the first sub-layer, said second stressor material containing silicon-nitrogen bonds and imparting tensile stress to the semiconductor structure; and (e) curing the second sub-layer of stressor material through exposure to a radiation source.

    Abstract translation: 提供一种制造半导体器件的方法，其包括（a）提供配备有栅极（209）和沟道区域的半导体结构，所述沟道区域与栅极相关联; （b）在半导体结构上沉积第一应力源材料的第一子层（231），所述第一应力材料含有硅 - 氮键并向半导体结构施加拉伸应力; （c）通过暴露于辐射源固化第一应激物材料; （d）在所述第一子层上沉积第二应力源材料的第二子层（233），所述第二应力材料含有硅 - 氮键并向所述半导体结构施加拉伸应力; 和（e）通过暴露于辐射源固化应力源材料的第二子层。

    MULTILAYER SILICON NITRIDE DEPOSITION FOR A SEMICONDUCTOR DEVICE
    3.
    发明申请
    MULTILAYER SILICON NITRIDE DEPOSITION FOR A SEMICONDUCTOR DEVICE 审中-公开
    用于半导体器件的多层硅氮化物沉积

    公开(公告)号：US20110210401A1

    公开(公告)日：2011-09-01

    申请号：US12713262

    申请日：2010-02-26

    Applicant: Kurt H. Junker ,  Paul A. Grudowski ,  Xiang-Zheng Bo ,  Tien Ying Luo

    Inventor： Kurt H. Junker ,  Paul A. Grudowski ,  Xiang-Zheng Bo ,  Tien Ying Luo

    IPC: H01L27/092 ,  H01L29/78

    CPC classification number: H01L21/823807 ,  H01L21/0214 ,  H01L21/0217 ,  H01L21/02274 ,  H01L27/092 ,  H01L29/78 ,  H01L29/7843

    Abstract: A method for making a semiconductor device is provided which comprises (a) providing a semiconductor structure equipped with a gate (209) and a channel region, said channel region being associated with the gate; (b) depositing a first sub-layer (231) of a first stressor material over the semiconductor structure, said first stressor material containing silicon- nitrogen bonds and imparting tensile stress to the semiconductor structure; (c) curing the first stressor material through exposure to a radiation source; (d) depositing a second sub-layer (233) of a second stressor material over the first sub-layer, said second stressor material containing silicon-nitrogen bonds and imparting tensile stress to the semiconductor structure; and (e) curing the second sub-layer of stressor material through exposure to a radiation source.

    Abstract translation: 提供一种制造半导体器件的方法，其包括（a）提供配备有栅极（209）和沟道区域的半导体结构，所述沟道区域与栅极相关联; （b）在半导体结构上沉积第一应力源材料的第一子层（231），所述第一应力材料含有硅 - 氮键并向半导体结构施加拉伸应力; （c）通过暴露于辐射源固化第一应激物材料; （d）在所述第一子层上沉积第二应力源材料的第二子层（233），所述第二应力材料含有硅 - 氮键并向所述半导体结构施加拉伸应力; 和（e）通过暴露于辐射源固化应力源材料的第二子层。

    Self-assembled photonic crystals and methods for manufacturing same
    5.
    发明授权
    Self-assembled photonic crystals and methods for manufacturing same 失效
    自组装光子晶体及其制造方法

    公开(公告)号：US06858079B2

    公开(公告)日：2005-02-22

    申请号：US09946343

    申请日：2001-09-06

    Applicant: David J. Norris ,  Yurii Vlasov ,  Xiang-Zheng Bo ,  James C. Sturm

    Inventor： David J. Norris ,  Yurii Vlasov ,  Xiang-Zheng Bo ,  James C. Sturm

    IPC: C30B5/00 ,  G02B6/122 ,  G02B6/13 ,  C30B7/02

    CPC classification number: G02B1/005 ,  B82Y10/00 ,  B82Y20/00 ,  B82Y30/00 ,  C30B5/00 ,  C30B29/60 ,  G02B6/1225 ,  G02B6/13

    Abstract: Self-assembled photonic crystals, including large sphere planar opals, infiltrated planar opals and inverted planar opals, as well as methods for manufacturing same are provided. Large sphere planar opals are manufactured according to a method comprising the steps of: synthesizing monodisperse silica spheres, wherein each of the silica spheres has a diameter greater than or equal to about 400 nanometers; purifying the silica spheres; and self-assembling the silica spheres into a plurality of ordered, planar layers on a substrate. Infiltrated planar opals may also be manufactured by further processing the large sphere planar opal by sintering the planar opal and infiltrating the planar opal with a predetermined material. Inverted planar opals may further be manufactured by removing the silica spheres from the infiltrated planar opal. Various modifications to the substrate and planar opal are also provided to enhance the properties of these photonic crystals.

    Abstract translation: 提供了自组装光子晶体，包括大球平面蛋白石，渗透平面蛋白石和倒平面蛋白石，以及其制造方法。 根据包括以下步骤的方法制造大球状平面蛋白石：合成单分散二氧化硅球体，其中每个二氧化硅球体具有大于或等于约400纳米的直径; 净化二氧化硅球体; 并将二氧化硅球自组装成衬底上的多个有序的平面层。 渗透的平面蛋白石也可以通过用平面蛋白石烧结并用预定材料浸透平面蛋白石进一步加工大球面平面蛋白石来制造。 可以通过从渗透的平面蛋白石中除去二氧化硅球体来进一步制造反向平面蛋白石。 还提供了对基底和平面蛋白石的各种修改以增强这些光子晶体的性质。

    Multilayer silicon nitride deposition for a semiconductor device
    6.
    发明授权
    Multilayer silicon nitride deposition for a semiconductor device 有权
    用于半导体器件的多层氮化硅沉积

    公开(公告)号：US07700499B2

    公开(公告)日：2010-04-20

    申请号：US12008607

    申请日：2008-01-11

    Applicant: Kurt H. Junker ,  Paul A. Grudowski ,  Xiang-Zheng Bo ,  Tien Ying Luo

    Inventor： Kurt H. Junker ,  Paul A. Grudowski ,  Xiang-Zheng Bo ,  Tien Ying Luo

    IPC: H01L21/31

    CPC classification number: H01L21/823807 ,  H01L29/78 ,  H01L29/7843 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: A method for making a semiconductor device is provided which comprises (a) providing a semiconductor structure equipped with a gate (209) and a channel region, said channel region being associated with the gate; (b) depositing a first sub-layer (231) of a first stressor material over the semiconductor structure, said first stressor material containing silicon-nitrogen bonds and imparting tensile stress to the semiconductor structure; (c) curing the first stressor material through exposure to a radiation source; (d) depositing a second sub-layer (233) of a second stressor material over the first sub-layer, said second stressor material containing silicon-nitrogen bonds and imparting tensile stress to the semiconductor structure; and (e) curing the second sub-layer of stressor material through exposure to a radiation source.

    Abstract translation: 提供一种制造半导体器件的方法，其包括（a）提供配备有栅极（209）和沟道区域的半导体结构，所述沟道区域与栅极相关联; （b）在半导体结构上沉积第一应力源材料的第一子层（231），所述第一应力材料含有硅 - 氮键并向半导体结构施加拉伸应力; （c）通过暴露于辐射源固化第一应激物材料; （d）在所述第一子层上沉积第二应力源材料的第二子层（233），所述第二应力材料含有硅 - 氮键并向所述半导体结构施加拉伸应力; 和（e）通过暴露于辐射源固化应力源材料的第二子层。

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