公开(公告)号：US20080258176A1

公开(公告)日：2008-10-23

申请号：US11788145

申请日：2007-04-18

申请人： Yeong-Chang Chou ,  Jay Crawford ,  Jane Lee ,  Jeffrey Ming-Jer Yang ,  John Bradley Boos ,  Nicolas Alexandrou Papanicolaou

发明人： Yeong-Chang Chou ,  Jay Crawford ,  Jane Lee ,  Jeffrey Ming-Jer Yang ,  John Bradley Boos ,  Nicolas Alexandrou Papanicolaou

IPC分类号： H01L23/48 ,  H01L21/3205 ,  H01L21/335 ,  H01L31/00

CPC分类号： H01L29/66431 ,  H01L29/7783

摘要： An apparatus in one example comprises an antimonide-based compound semiconductor (ABCS) stack, an upper barrier layer formed on the ABCS stack, and a gate stack formed on the upper barrier layer. The upper barrier layer comprises indium, aluminum, and arsenic. The gate stack comprises a base layer of titanium and tungsten formed on the upper barrier layer.

摘要翻译： 一个实例中的装置包括基于锑化物的化合物半导体（ABCS）堆叠，形成在ABCS堆叠上的上阻挡层和形成在上阻挡层上的栅极堆叠。 上阻挡层包括铟，铝和砷。 栅堆叠包括形成在上阻挡层上的钛和钨的基层。

公开(公告)号：US10153273B1

公开(公告)日：2018-12-11

申请号：US15832377

申请日：2017-12-05

申请人： Roger S. Tsai ,  Weidong Liu ,  Yeong-Chang Chou

发明人： Roger S. Tsai ,  Weidong Liu ,  Yeong-Chang Chou

IPC分类号： H01L27/06 ,  H01L29/207 ,  H01L29/423 ,  H01L29/778 ,  H01L29/80 ,  H01L49/02 ,  H01L21/8252 ,  H01L29/66 ,  H01L21/764 ,  H01L21/74 ,  H01L21/285 ,  H01L21/3213 ,  H01L23/528 ,  H01L23/482 ,  H01L23/66 ,  H01L29/205

摘要： A semiconductor device is provided that comprises a base structure, a first channel layer overlying the base structure, a second channel layer overlying the first channel layer, and first, second, and third ohmic contacts overlying the second channel layer. The semiconductor device further comprises a metal-semiconductor heterodimension field effect transistor that is formed between the first and second ohmic contacts, the metal-semiconductor heterodimension field effect transistor including a first gate formed through the first and second channel layers. The semiconductor device yet further comprises a high electron mobility transistor formed between the second and third ohmic contacts, the high electron mobility transistor including a second gate formed through the second channel layer without extending through the first channel layer.

公开(公告)号：US20130210219A1

公开(公告)日：2013-08-15

申请号：US13793251

申请日：2013-03-11

申请人： Yeong-Chang CHOU ,  Jay CRAWFORD ,  Jane LEE ,  Jeffrey Ming-Jer YANG ,  John Bradley Boos ,  Nicolas Alexandrou Papanicolaou

发明人： Yeong-Chang CHOU ,  Jay CRAWFORD ,  Jane LEE ,  Jeffrey Ming-Jer YANG ,  John Bradley Boos ,  Nicolas Alexandrou Papanicolaou

IPC分类号： H01L29/66

CPC分类号： H01L29/66431 ,  H01L29/7783

摘要： An apparatus in one example comprises an antimonide-based compound semiconductor (ABCS) stack, an upper barrier layer formed on the ABCS stack, and a gate stack formed on the upper barrier layer. The upper barrier layer comprises indium, aluminum, and arsenic. The gate stack comprises a base layer of titanium and tungsten formed on the upper barrier layer.

摘要翻译： 一个实例中的装置包括基于锑化物的化合物半导体（ABCS）堆叠，形成在ABCS堆叠上的上阻挡层和形成在上阻挡层上的栅极堆叠。 上阻挡层包括铟，铝和砷。 栅堆叠包括形成在上阻挡层上的钛和钨的基层。

公开(公告)号：US20080251891A1

公开(公告)日：2008-10-16

申请号：US11784872

申请日：2007-04-10

申请人： Yeong-Chang Chou ,  Peter S. Nam ,  Chun H. Lin ,  Augusto Gutierrez ,  Jeffrey Ming-Jer Yang ,  Michael Wojtowicz

发明人： Yeong-Chang Chou ,  Peter S. Nam ,  Chun H. Lin ,  Augusto Gutierrez ,  Jeffrey Ming-Jer Yang ,  Michael Wojtowicz

IPC分类号： H01L23/58 ,  H01L21/00

CPC分类号： H01L21/31612 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02274 ,  H01L21/3145

摘要： The layers of a semiconductor device have exposed edges. The layers that are susceptible to oxidation are protected from oxidation by coating them with a nitride passivation layer. The nitride passivation layer can be applied using plasma enhanced chemical vapor deposition (PECVD). A method of making a passivated sidewall semiconductor includes the steps of applying a nitride or other protective material over a wafer using PECVD or other appropriate deposition method.

摘要翻译： 半导体器件的层具有暴露边缘。 易受氧化的层通过用氮化物钝化层涂覆而防止氧化。 可以使用等离子体增强化学气相沉积（PECVD）来施加氮化物钝化层。 制造钝化侧壁半导体的方法包括以下步骤：使用PECVD或其它合适的沉积方法在晶片上施加氮化物或其它保护材料。

公开(公告)号：US08421121B2

公开(公告)日：2013-04-16

申请号：US11788145

申请日：2007-04-18

申请人： Yeong-Chang Chou ,  Jay Crawford ,  Jane Lee ,  Jeffrey Ming-Jer Yang ,  John Bradley Boos ,  Nicolas Alexandrou Papanicolaou

发明人： Yeong-Chang Chou ,  Jay Crawford ,  Jane Lee ,  Jeffrey Ming-Jer Yang ,  John Bradley Boos ,  Nicolas Alexandrou Papanicolaou

IPC分类号： H01L29/778

CPC分类号： H01L29/66431 ,  H01L29/7783

摘要： An apparatus in one example comprises an antimonide-based compound semiconductor (ABCS) stack, an upper barrier layer formed on the ABCS stack, and a gate stack formed on the upper barrier layer. The upper barrier layer comprises indium, aluminum, and arsenic. The gate stack comprises a base layer of titanium and tungsten formed on the upper barrier layer.