Uniform temperature heater
    1.
    发明授权
    Uniform temperature heater 有权
    均匀温度加热器

    公开(公告)号:US08193473B2

    公开(公告)日:2012-06-05

    申请号:US12366733

    申请日:2009-02-06

    申请人: Yutaka Unno

    发明人: Yutaka Unno

    IPC分类号: H05B3/68 C23C16/00

    摘要: A heating unit includes: a base having an upper surface; a first heating element buried in an upper part of the base, the upper part including the upper surface, the first heating element having a flat shape almost parallel to the upper surface; and a second heating element buried in a lower part of the base and arranged in a location lower than the first heating element with respect to the upper surface, the lower part being joined to the upper part, and the second heating element having a flat shape. First and second projection patterns have an overlapping portion where the first projection pattern and the second projection pattern partially overlap each other, the first projection pattern representing the first heating element projected on the upper surface of the base, and the second projection pattern representing the second heating element projected the upper surface of the base.

    摘要翻译: 加热单元包括:具有上表面的基座; 第一加热元件埋设在基座的上部,上部包括上表面,第一加热元件具有几乎平行于上表面的平坦形状; 以及第二加热元件,所述第二加热元件埋设在所述基座的下部,并且相对于所述上表面配置在比所述第一加热元件低的位置,所述下部与所述上部接合,所述第二加热元件具有平坦形状 。 第一和第二投影图案具有重叠部分,其中第一投影图案和第二投影图案部分地彼此重叠,表示第一加热元件的第一投影图案投影在基座的上表面上,第二投影图案表示第二投影图案 加热元件投影到底座的上表面。

    Susceptor for semiconductor manufacturing apparatus
    2.
    发明授权
    Susceptor for semiconductor manufacturing apparatus 有权
    半导体制造装置的受体

    公开(公告)号:US07686889B2

    公开(公告)日:2010-03-30

    申请号:US12049615

    申请日:2008-03-17

    IPC分类号: C23C16/00 C23F1/00 H01L21/306

    CPC分类号: C23C14/50 C23C16/4582

    摘要: There is provided a susceptor for semiconductor manufacturing apparatus that offers excellent thermal uniformity of a substrate being secured by vacuum chucking. A susceptor for semiconductor manufacturing apparatus includes an aluminum-nitride support member in which heater electrodes are buried to heat the substrate, a recessed wafer pocket formed on an upper surface of the support member, a through hole formed in the wafer pocket, and a seal band that supports the substrate at a periphery of the wafer pocket, and on an upper surface of the seal band, a plurality of gas channels are formed to allow gas in a chamber to pass through the gas channels from an outer circumference of the seal band toward the wafer pocket.

    摘要翻译: 提供了一种用于半导体制造装置的感受器,其通过真空夹紧来确保基板的优异的热均匀性。 一种用于半导体制造装置的感受体包括氮化铝支撑构件,其中埋入加热电极以加热衬底,形成在支撑构件的上表面上的凹陷晶片槽,形成在晶片槽中的通孔和密封 带,其在晶片槽的周边支撑基板,并且在密封带的上表面上形成多个气体通道,以使腔室中的气体从密封带的外周穿过气体通道 朝向晶圆袋。

    HEATING UNIT
    3.
    发明申请
    HEATING UNIT 有权
    加热单元

    公开(公告)号:US20090200289A1

    公开(公告)日:2009-08-13

    申请号:US12366733

    申请日:2009-02-06

    申请人: Yutaka UNNO

    发明人: Yutaka UNNO

    IPC分类号: H05B3/68

    摘要: A heating unit includes: a base having an upper surface; a first heating element buried in an upper part of the base, the upper part including the upper surface, the first heating element having a flat shape almost parallel to the upper surface; and a second heating element buried in a lower part of the base and arranged in a location lower than the first heating element with respect to the upper surface, the lower part being joined to the upper part, and the second heating element having a flat shape. First and second projection patterns have an overlapping portion where the first projection pattern and the second projection pattern partially overlap each other, the first projection pattern representing the first heating element projected on the upper surface of the base, and the second projection pattern representing the second heating element projected the upper surface of the base.

    摘要翻译: 加热单元包括:具有上表面的基座; 第一加热元件埋设在基座的上部,上部包括上表面,第一加热元件具有几乎平行于上表面的平坦形状; 以及第二加热元件,所述第二加热元件埋设在所述基座的下部,并且相对于所述上表面配置在比所述第一加热元件低的位置,所述下部与所述上部接合,所述第二加热元件具有平坦形状 。 第一和第二投影图案具有重叠部分,其中第一投影图案和第二投影图案部分地彼此重叠,表示第一加热元件的第一投影图案投影在基座的上表面上,第二投影图案表示第二投影图案 加热元件投影到底座的上表面。

    SUSCEPTOR FOR SEMICONDUCTOR MANUFACTURING APPARATUS
    4.
    发明申请
    SUSCEPTOR FOR SEMICONDUCTOR MANUFACTURING APPARATUS 有权
    半导体制造设备制造商

    公开(公告)号:US20080236479A1

    公开(公告)日:2008-10-02

    申请号:US12049615

    申请日:2008-03-17

    IPC分类号: C23C14/24

    CPC分类号: C23C14/50 C23C16/4582

    摘要: There is provided a susceptor for semiconductor manufacturing apparatus that offers excellent thermal uniformity of a substrate being secured by vacuum chucking. A susceptor for semiconductor manufacturing apparatus includes an aluminum-nitride support member in which heater electrodes are buried to heat the substrate, a recessed wafer pocket formed on an upper surface of the support member, a through hole formed in the wafer pocket, and a seal band that supports the substrate at a periphery of the wafer pocket, and on an upper surface of the seal band, a plurality of gas channels are formed to allow gas in a chamber to pass through the gas channels from an outer circumference of the seal band toward the wafer pocket.

    摘要翻译: 提供了一种用于半导体制造装置的感受器,其通过真空夹紧来确保基板的优异的热均匀性。 一种用于半导体制造装置的感受体包括氮化铝支撑构件,其中埋入加热电极以加热衬底,形成在支撑构件的上表面上的凹陷晶片槽,形成在晶片槽中的通孔和密封 带,其在晶片槽的周边支撑基板,并且在密封带的上表面上形成多个气体通道,以使腔室中的气体从密封带的外周穿过气体通道 朝向晶圆袋。

    HEATING DEVICE
    5.
    发明申请
    HEATING DEVICE 有权
    加热装置

    公开(公告)号:US20070221648A1

    公开(公告)日:2007-09-27

    申请号:US11688416

    申请日:2007-03-20

    IPC分类号: F27D11/00

    摘要: A heating device includes a substantially cylindrical shaft joined to a joint surface of a plate-shaped ceramic substrate opposite to a heating surface, the ceramic substrate including a resistance heating element embedded in the ceramic substrate. The shaft includes a flange portion formed in the end joined to the ceramic substrate and a first cylindrical portion connecting to the flange portion, and a ratio D3/D1 of an inner diameter D3 of a joint area in the flange portion and an outer diameter D1 of the first cylindrical portion is not less than 92%.

    摘要翻译: 加热装置包括与加热面相对的板状陶瓷基板的接合面接合的大致圆筒状的轴,陶瓷基板包括嵌入陶瓷基板的电阻加热元件。 该轴包括形成在与陶瓷基体相连接的一端的凸缘部分和连接到凸缘部分的第一圆柱形部分,以及凸缘部分中的接合区域的内径D 3的比D 3 / D 1和 第一圆筒部的外径D 1为92%以上。

    Heating device
    6.
    发明授权
    Heating device 有权
    加热装置

    公开(公告)号:US07173220B2

    公开(公告)日:2007-02-06

    申请号:US11086771

    申请日:2005-03-22

    IPC分类号: H05B3/68 H05B3/10

    CPC分类号: H01L21/67103 H05B3/143

    摘要: A heating device comprises a substrate having a heating surface, a heating element buried in the substrate, a cylindrical member joined to the substrate, and lead wires for supplying current to the heating element. In addition, the thermal conductivity of the substrate is about 1.0 to about 2.0 times the thermal conductivity of the cylindrical member.

    摘要翻译: 加热装置包括具有加热面的基板,埋在基板中的加热元件,与基板接合的圆筒部件,以及向加热元件供给电流的引线。 此外,基板的热导率为圆柱形部件的热导率的约1.0至约2.0倍。

    Plasma processing device
    7.
    发明申请
    Plasma processing device 审中-公开
    等离子处理装置

    公开(公告)号:US20060267494A1

    公开(公告)日:2006-11-30

    申请号:US11439655

    申请日:2006-05-24

    IPC分类号: H01J61/24

    CPC分类号: H01J37/32082 H01J37/32577

    摘要: To provide a plasma processing device in which an amount of heat generated from a power supply member is small when the power supply member is supplied with high frequency current. A substrate heater as the plasma processing device includes a ceramic base including a high frequency electrode and a high frequency electrode power supply member supplying high frequency current to the high frequency electrode. The high frequency electrode power supply member includes a power supply body and a high conductivity metal layer which is formed on the outer peripheral surface of the power supply body and has a conductivity higher than that of the power supply body.

    摘要翻译: 提供一种等离子体处理装置,其中当电源构件被供应高频电流时,从电源构件产生的热量小。 作为等离子体处理装置的基板加热器包括具有高频电极的陶瓷基体和向高频电极供给高频电流的高频电极电源部件。 高频电极电源构件包括电源体和形成在电源主体的外周面上的导电性高的导电性金属层,其导电率高于供电体的导电率。

    Ceramic heaters
    8.
    发明授权
    Ceramic heaters 有权
    陶瓷加热器

    公开(公告)号:US06958462B2

    公开(公告)日:2005-10-25

    申请号:US10386002

    申请日:2003-03-11

    CPC分类号: H01L21/67103

    摘要: An object of the present invention is to provide a ceramic heater so that hot spots around the end portions of a heat resistor may be prevented. A ceramic heater has a ceramic substrate having a mounting face for an object to be heated, a heat resistor 3B embedded in the substrate and having end portions 3a, and a connecting member 6 electrically connected with the end portion 3a. At least one connecting member 6 substantially has an outer shape of a sphere, an ellipsoid of revolution, or a cylinder. The connecting member 6 has a fixing portion 3a of the heat resistor by means of caulking.

    摘要翻译: 本发明的目的是提供一种陶瓷加热器,从而可以防止热电阻器端部周围的热点。 陶瓷加热器具有陶瓷基板,该陶瓷基板具有用于待加热物体的安装面,嵌入基板内的具有端部3a的热电阻器3B和与端部3a电连接的连接部件6。 至少一个连接构件6基本上具有球体的外形,旋转的椭圆形或圆柱体。 连接构件6通过铆接具有热电阻器的固定部分3a。

    Heating system
    10.
    发明授权
    Heating system 有权
    加热系统

    公开(公告)号:US06875960B2

    公开(公告)日:2005-04-05

    申请号:US10244986

    申请日:2002-09-17

    CPC分类号: H01L21/67103

    摘要: A heating system 25 has a main electric heat-generating element 3 and a heating surface 4a for heating an object, auxiliary electric heat-generating elements 5A to 5D, and a main power source 1 for supplying power to the main heating element. The system 25 further has an auxiliary power source 2 for supplying power to the auxiliary heating elements, and a power source controller for controlling the power supplied to the main heating element and to the auxiliary heating elements respectively and independently. Power supplied to the main heating element 3 is controlled by the controller within a first power range and power supplied to the auxiliary heating elements is controlled by the controller within a second power range. The second power range has a width smaller than that of the first power range so as to control temperature distribution on the heating surface 4a.

    摘要翻译: 加热系统25具有主电热元件3和用于加热物体的加热面4a,辅助发热元件5A至5D和用于向主加热元件供电的主电源1。 系统25还具有用于向辅助加热元件供电的辅助电源2和分别独立地控制供给主加热元件和辅助加热元件的电力的电源控制器。 供给主加热元件3的电力由控制器在第一功率范围内控制,并且供给辅助加热元件的功率由控制器在第二功率范围内控制。 第二功率范围的宽度小于第一功率范围的宽度,以便控制加热表面4a上的温度分布。