公开(公告)号：US20050210974A1

公开(公告)日：2005-09-29

申请号：US11059576

申请日：2005-02-16

申请人： Yutaka Unno ,  Yoshinobu Goto ,  Taiji Kiku

发明人： Yutaka Unno ,  Yoshinobu Goto ,  Taiji Kiku

IPC分类号： H05B3/06 ,  G01F1/68 ,  H01L21/00 ,  H01L21/02 ,  H01L21/205 ,  H01L21/3065 ,  H01S4/00 ,  H05B3/10 ,  H05B3/74

CPC分类号： H01L21/67103 ,  Y10T29/49002 ,  Y10T29/49083 ,  Y10T29/49085 ,  Y10T29/49087 ,  Y10T29/49096 ,  Y10T29/49098

摘要： A manufacturing method for a substrate heating device comprises forming a base plate having a substrate heating surface in which a resistance heating element is buried, forming a tubular member, joining the tubular member to the base plate, measuring temperature distribution in the substrate heating surface by supplying power to the resistance heating element, and grinding the tubular member according to a grinding condition based on a measurement result of the temperature distribution.

摘要翻译： 一种基板加热装置的制造方法，其特征在于，形成具有基板加热面的基板，所述基板加热面埋设有电阻加热元件，形成管状部件，将所述管状部件与所述基板接合，测定所述基板加热面的温度分布， 向电阻加热元件供电，并且根据温度分布的测量结果根据研磨条件研磨管状构件。

公开(公告)号：US07401399B2

公开(公告)日：2008-07-22

申请号：US11059576

申请日：2005-02-16

申请人： Yutaka Unno ,  Yoshinobu Goto ,  Taiji Kiku

发明人： Yutaka Unno ,  Yoshinobu Goto ,  Taiji Kiku

IPC分类号： H05B3/00

CPC分类号： H01L21/67103 ,  Y10T29/49002 ,  Y10T29/49083 ,  Y10T29/49085 ,  Y10T29/49087 ,  Y10T29/49096 ,  Y10T29/49098

摘要： A manufacturing method for a substrate heating device comprises forming a base plate having a substrate heating surface in which a resistance heating element is buried, forming a tubular member, joining the tubular member to the base plate, measuring temperature distribution in the substrate heating surface by supplying power to the resistance heating element, and grinding the tubular member according to a grinding condition based on a measurement result of the temperature distribution.

摘要翻译： 一种基板加热装置的制造方法，其特征在于，形成具有基板加热面的基板，所述基板加热面埋设有电阻加热元件，形成管状部件，将所述管状部件与所述基板接合，测定所述基板加热面的温度分布， 向电阻加热元件供电，并且根据温度分布的测量结果根据研磨条件研磨管状构件。

公开(公告)号：US20060207987A1

公开(公告)日：2006-09-21

申请号：US11375812

申请日：2006-03-15

申请人： Yutaka Unno ,  Taiji Kiku

发明人： Yutaka Unno ,  Taiji Kiku

IPC分类号： H05B3/68

CPC分类号： H01L21/67103 ,  H01L21/68 ,  H05B1/02

摘要： According to a related art for evaluating the position accuracy of heaters with respect to the plate, it is necessary to attach an energizing electrode to the heaters, and energize the heaters for a predetermined period to heat the entire plate, before measuring the temperature distribution map. Therefore, there is a problem in that several tens of minutes are required until the temperature distribution map can be measured. As the plate becomes larger, the time required for energizing the heaters to heat the entire plate becomes longer. A technique for evaluating the position accuracy of heaters with respect to the plate, without executing a process for energizing the heaters to heat the plate is disclosed.

摘要翻译： 根据用于评价加热器相对于板的位置精度的相关技术，需要在加热器之前附加通电电极，并且在测量温度分布图之前将加热器通电一定时间以加热整个板 。 因此，在测量温度分布图之前，存在需要几十分钟的问题。 随着板变大，加热器加热整个板所需的时间变长。 公开了一种用于评估加热器相对于板的位置精度的技术，而不执行用于激励加热器加热板的过程。

公开(公告)号：US07686889B2

公开(公告)日：2010-03-30

申请号：US12049615

申请日：2008-03-17

申请人： Taiji Kiku ,  Yutaka Unno

发明人： Taiji Kiku ,  Yutaka Unno

IPC分类号： C23C16/00 ,  C23F1/00 ,  H01L21/306

CPC分类号： C23C14/50 ,  C23C16/4582

摘要： There is provided a susceptor for semiconductor manufacturing apparatus that offers excellent thermal uniformity of a substrate being secured by vacuum chucking. A susceptor for semiconductor manufacturing apparatus includes an aluminum-nitride support member in which heater electrodes are buried to heat the substrate, a recessed wafer pocket formed on an upper surface of the support member, a through hole formed in the wafer pocket, and a seal band that supports the substrate at a periphery of the wafer pocket, and on an upper surface of the seal band, a plurality of gas channels are formed to allow gas in a chamber to pass through the gas channels from an outer circumference of the seal band toward the wafer pocket.

摘要翻译： 提供了一种用于半导体制造装置的感受器，其通过真空夹紧来确保基板的优异的热均匀性。 一种用于半导体制造装置的感受体包括氮化铝支撑构件，其中埋入加热电极以加热衬底，形成在支撑构件的上表面上的凹陷晶片槽，形成在晶片槽中的通孔和密封 带，其在晶片槽的周边支撑基板，并且在密封带的上表面上形成多个气体通道，以使腔室中的气体从密封带的外周穿过气体通道 朝向晶圆袋。

公开(公告)号：US20080236479A1

公开(公告)日：2008-10-02

申请号：US12049615

申请日：2008-03-17

申请人： Taiji Kiku ,  Yutaka Unno

发明人： Taiji Kiku ,  Yutaka Unno

IPC分类号： C23C14/24

CPC分类号： C23C14/50 ,  C23C16/4582

摘要： There is provided a susceptor for semiconductor manufacturing apparatus that offers excellent thermal uniformity of a substrate being secured by vacuum chucking. A susceptor for semiconductor manufacturing apparatus includes an aluminum-nitride support member in which heater electrodes are buried to heat the substrate, a recessed wafer pocket formed on an upper surface of the support member, a through hole formed in the wafer pocket, and a seal band that supports the substrate at a periphery of the wafer pocket, and on an upper surface of the seal band, a plurality of gas channels are formed to allow gas in a chamber to pass through the gas channels from an outer circumference of the seal band toward the wafer pocket.

摘要翻译： 提供了一种用于半导体制造装置的感受器，其通过真空夹紧来确保基板的优异的热均匀性。 一种用于半导体制造装置的感受体包括氮化铝支撑构件，其中埋入加热电极以加热衬底，形成在支撑构件的上表面上的凹陷晶片槽，形成在晶片槽中的通孔和密封 带，其在晶片槽的周边支撑基板，并且在密封带的上表面上形成多个气体通道，以使腔室中的气体从密封带的外周穿过气体通道 朝向晶圆袋。

公开(公告)号：US07948516B2

公开(公告)日：2011-05-24

申请号：US11375812

申请日：2006-03-15

申请人： Yutaka Unno ,  Taiji Kiku

发明人： Yutaka Unno ,  Taiji Kiku

IPC分类号： H04N7/18 ,  H05B3/68

CPC分类号： H01L21/67103 ,  H01L21/68 ,  H05B1/02

摘要： According to a related art for evaluating the position accuracy of heaters with respect to the plate, it is necessary to attach an energizing electrode to the heaters, and energize the heaters for a predetermined period to heat the entire plate, before measuring the temperature distribution map. Therefore, there is a problem in that several tens of minutes are required until the temperature distribution map can be measured. As the plate becomes larger, the time required for energizing the heaters to heat the entire plate becomes longer. A technique for evaluating the position accuracy of heaters with respect to the plate, without executing a process for energizing the heaters to heat the plate is disclosed.

摘要翻译： 根据用于评价加热器相对于板的位置精度的相关技术，需要在加热器之前附加通电电极，并且在测量温度分布图之前将加热器通电一定时间以加热整个板 。 因此，在测量温度分布图之前，存在需要几十分钟的问题。 当板变大时，加热器加热整个板所需的时间变长。 公开了一种用于评估加热器相对于板的位置精度的技术，而不执行用于激励加热器加热板的过程。

公开(公告)号：US07288020B1

公开(公告)日：2007-10-30

申请号：US11678711

申请日：2007-02-26

申请人： Taiji Kiku

发明人： Taiji Kiku

IPC分类号： B24C1/00

CPC分类号： B24C3/02 ,  B24C11/00

摘要： Disclosed is a blast processing method for removing a deposit adhered onto a surface of a ceramic heater formed of aluminum nitride by blowing a blasting material onto the surface. Abrasive grains made of silicon carbide or aluminum oxide and having a grain size of #400 to #800 are used as the blasting material, and a blast pressure as a pressure when the blasting material collides with the surface of the ceramic heater is set at 40 to 150 gf/cm2.

摘要翻译： 公开了一种用于通过将喷砂材料吹到表面上去除附着在由氮化铝形成的陶瓷加热器的表面上的沉积物的喷砂处理方法。 使用由碳化硅或氧化铝制成的粒径为＃400〜＃800的磨粒作为喷砂材料，作为喷砂材料与陶瓷加热器的表面碰撞时的压力的鼓风压力设定为40 至150gf / cm 2。

公开(公告)号：US20050211703A1

公开(公告)日：2005-09-29

申请号：US11087094

申请日：2005-03-22

申请人： Taiji Kiku ,  Akiyoshi Hattori

发明人： Taiji Kiku ,  Akiyoshi Hattori

IPC分类号： B08B7/00 ,  B08B3/08 ,  H01L21/00 ,  H01L21/02 ,  H01L21/205 ,  H01L21/3065 ,  H01L21/68 ,  H01L21/683 ,  H05B3/14 ,  H05B6/80

CPC分类号： H05B3/143 ,  H01L21/67103 ,  H05B6/806 ,  Y10S134/902

摘要： An object of the present invention is to provide a ceramic susceptor for considerably reducing the count number of metal atoms on the surface of a semiconductor after the semiconductor is treated, specifically to 1×1010 atoms/cm2 or lower. It is provided a ceramic susceptor 2 having a face for mounting semiconductor 2a wherein each of metal elements other than metal element(s) constituting the ceramic material has a count number of 1×1011 atoms/cm2 or lower. It is further provided a method of cleaning a ceramic susceptor 2 having a face 2a for mounting semiconductor, wherein the susceptor is cleaned using a complexing agent capable of forming a complex with a metal element.

摘要翻译： 本发明的一个目的是提供一种用于在半导体被处理之后，显着地减少半导体表面上的金属原子计数的陶瓷基座，特别是1×10 10原子/ 2 或更低。 提供了一种具有用于安装半导体2a的面的陶瓷基座2，其中除了构成陶瓷材料的金属元素之外的金属元素中的每一个具有1×10 11原子/ cm 2的计数 > 2 或更低。 还提供了一种清洁具有用于安装半导体的面2a的陶瓷基座2的方法，其中使用能够与金属元素形成络合物的络合剂清洁基座。

公开(公告)号：US07261780B2

公开(公告)日：2007-08-28

申请号：US11087094

申请日：2005-03-22

申请人： Taiji Kiku ,  Akiyoshi Hattori

发明人： Taiji Kiku ,  Akiyoshi Hattori

IPC分类号： B08B3/04

CPC分类号： H05B3/143 ,  H01L21/67103 ,  H05B6/806 ,  Y10S134/902

摘要： An object of the present invention is to provide a ceramic susceptor for considerably reducing the count number of metal atoms on the surface of a semiconductor after the semiconductor is treated, specifically to 1×1010 atoms/cm2 or lower. It is provided a ceramic susceptor 2 having a face for mounting semiconductor 2a wherein each of metal elements other than metal element(s) constituting the ceramic material has a count number of 1×1011 atoms/cm2 or lower. It is further provided a method of cleaning a ceramic susceptor 2 having a face 2a for mounting semiconductor, wherein the susceptor is cleaned using a complexing agent capable of forming a complex with a metal element.

摘要翻译： 本发明的一个目的是提供一种用于在半导体被处理之后，显着地减少半导体表面上的金属原子计数的陶瓷基座，特别是1×10 10原子/ 2 或更低。 提供了一种具有用于安装半导体2a的面的陶瓷基座2，其中除了构成陶瓷材料的金属元素之外的金属元素中的每一个具有1×10 11原子/ cm 2的计数 > 2 或更低。 还提供了一种清洁具有用于安装半导体的面2a的陶瓷基座2的方法，其中使用能够与金属元素形成络合物的络合剂清洁基座。

公开(公告)号：US07211156B2

公开(公告)日：2007-05-01

申请号：US11032939

申请日：2005-01-11

申请人： Shinji Yamaguchi ,  Taiji Kiku ,  Nobuyuki Kondou

发明人： Shinji Yamaguchi ,  Taiji Kiku ,  Nobuyuki Kondou

IPC分类号： B08B3/12 ,  B08B7/04

CPC分类号： H01L21/67115 ,  B08B3/08 ,  C11D7/265 ,  C11D11/0047 ,  Y10S438/906

摘要： The present invention provides a method for cleaning a ceramic member for use in a system for producing semiconductors. The method has the step of cleaning the ceramic member with an organic acid or a weak acid. Preferably, the ceramic member is cleaned with a strong acid before the cleaning with an organic acid or a weak acid. The ceramic member may be subjected to a blasting treatment before the cleaning with an organic acid or a weak acid. According to the method, the amount of metal transferred from the ceramic member to a semiconductor may be considerably reduced.

摘要翻译： 本发明提供一种用于清洁用于制造半导体的系统的陶瓷构件的方法。 该方法具有用有机酸或弱酸清洗陶瓷构件的步骤。 优选地，在用有机酸或弱酸清洗之前，用强酸将陶瓷构件清洗。 陶瓷构件可以在用有机酸或弱酸清洗之前进行喷砂处理。 根据该方法，可以显着地减少从陶瓷构件转移到半导体的金属的量。