公开(公告)号：US10439095B2

公开(公告)日：2019-10-08

申请号：US15546030

申请日：2015-10-14

Applicant: 1366 TECHNOLOGIES INC.

Inventor： Ralf Jonczyk ,  Brian D. Kernan ,  G. D. Stephen Hudelson ,  Adam M. Lorenz ,  Emanuel M. Sachs

IPC: H01L21/00 ,  H01L31/18 ,  H01L31/0224 ,  H01L31/068 ,  H01L31/056 ,  H01L31/0216 ,  H01L31/0288 ,  C30B29/06 ,  C30B28/04 ,  C30B19/12 ,  C30B35/00 ,  C30B31/04 ,  C30B11/00 ,  C30B31/02

Abstract: A semiconductor wafer forms on a mold containing a dopant. The dopant dopes a melt region adjacent the mold. There, dopant concentration is higher than in the melt bulk. A wafer starts solidifying. Dopant diffuses poorly in solid semiconductor. After a wafer starts solidifying, dopant cannot enter the melt. Afterwards, the concentration of dopant in the melt adjacent the wafer surface is less than what was present where the wafer began to form. New wafer regions grow from a melt region whose dopant concentration lessens over time. This establishes a dopant gradient in the wafer, with higher concentration adjacent the mold. The gradient can be tailored. A gradient gives rise to a field that can function as a drift or back surface field. Solar collectors can have open grid conductors and better optical reflectors on the back surface, made possible by the intrinsic back surface field.

公开(公告)号：US10770613B2

公开(公告)日：2020-09-08

申请号：US16559971

申请日：2019-09-04

Applicant: 1366 TECHNOLOGIES INC.

Inventor： Ralf Jonczyk ,  Brian D. Kernan ,  G.D. Stephen Hudelson ,  Adam M. Lorenz ,  Emanuel M. Sachs

IPC: H01L31/06 ,  H01L31/00 ,  H01L31/062 ,  H01L31/113 ,  H01L31/18 ,  H01L31/0224 ,  C30B11/00 ,  C30B19/12 ,  C30B28/04 ,  C30B29/06 ,  C30B31/02 ,  C30B31/04 ,  C30B35/00 ,  H01L21/00 ,  H01L31/068 ,  H01L31/056 ,  H01L31/0216 ,  H01L31/0288

Abstract: A semiconductor wafer forms on a mold containing a dopant. The dopant dopes a melt region adjacent the mold. There, dopant concentration is higher than in the melt bulk. A wafer starts solidifying. Dopant diffuses poorly in solid semiconductor. After a wafer starts solidifying, dopant can not enter the melt. Afterwards, the concentration of dopant in the melt adjacent the wafer surface is less than what was present where the wafer began to form. New wafer regions grow from a melt region whose dopant concentration lessens over time. This establishes a dopant gradient in the wafer, with higher concentration adjacent the mold. The gradient can be tailored. A gradient gives rise to a field that can function as a drift or back surface field. Solar collectors can have open grid conductors and better optical reflectors on the back surface, made possible by the intrinsic back surface field.