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    METHODS TO SELECTIVELY TREAT PORTIONS OF A SURFACE USING A SELF-REGISTERING MASK
    3.
    发明申请
    METHODS TO SELECTIVELY TREAT PORTIONS OF A SURFACE USING A SELF-REGISTERING MASK 审中-公开
    使用自注册掩模选择表面处理方法的方法

    公开(公告)号：US20150037923A1

    公开(公告)日：2015-02-05

    申请号：US14370321

    申请日：2013-01-06

    Applicant: 1366 TECHNOLOGIES, INC.

    Inventor： Vladimir S. Tarasov ,  Ali Ersen ,  ERIC Stern ,  Jason M. Criscione ,  Emanuel M. Sachs

    IPC: H01L31/0236 ,  H01L31/0248

    CPC classification number: H01L31/02363 ,  H01L31/0248 ,  Y02E10/50

    Abstract: Processes increase light absorption into silicon wafers by selectively changing the reflective properties of the bottom portions of light trapping cavity features. Modification of light trapping features includes: deepening the bottom portion, increasing the curvature of the bottom portion, and roughening the bottom portion, all accomplished through etching. Modification may also be by the selective addition of material at the bottom of cavity features. Different types of features in the same wafers may be treated differently. Some may receive a treatment that improves light trapping while another is deliberately excluded from such treatment. Some may be deepened, some roughened, some both. No alignment is needed to achieve this selectively. The masking step achieves self-alignment to previously created light trapping features due to softening and deformation in place.

    Abstract translation: 通过选择性地改变光阱特征的底部的反射特性，工艺增加了对硅晶片的光吸收。 光捕获特征的改进包括：深化底部部分，增加底部部分的曲率，以及粗糙化底部部分，全部通过蚀刻来实现。 修改也可以通过在腔体特征的底部选择性地添加材料。 不同类型的相同晶片中的特征可以被不同地对待。 有些可能会接受改善光线捕获的治疗方法，而另一种方法被故意排除在这种治疗之外。 有些可能会加深，有些粗糙，有的两个。 不需要对准以选择性地实现。 掩蔽步骤由于在现场的软化和变形而实现了先前产生的光捕获特征的自对准。

    Apparatus and Process for Depositing a Thin Layer of Resist on a Substrate
    4.
    发明申请
    Apparatus and Process for Depositing a Thin Layer of Resist on a Substrate 有权
    用于在基板上沉积薄层的薄膜的装置和方法

    公开(公告)号：US20140255615A1

    公开(公告)日：2014-09-11

    申请号：US14349087

    申请日：2012-10-12

    Applicant: 1366 TECHNOLOGIES, INC.

    Inventor： Guy M. Danner ,  Vladimir S. Tarasov ,  Peter E. Kane ,  Peter G. Madden ,  Holly G. Gates ,  Emanuel M. Sachs

    IPC: B05B5/00 ,  B05D1/06

    CPC classification number: B05B5/001 ,  B05B5/005 ,  B05B5/087 ,  B05B7/0012 ,  B05B12/16 ,  B05B13/02 ,  B05D1/04 ,  B05D1/06 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002 ,  H01L21/67109 ,  H01L21/67115 ,  H01L21/6715 ,  H01L21/6776

    Abstract: The present inventions relate to the formation of a thin polymer film on a substrate. Apparatus is described for transforming a solid polymer resist into an aerosol of small particles, electrostatically charging and depositing the particles onto a substrate, and flowing the particles into a continuous layer. Apparatus is further described for transforming solid resist into an aerosol of small particles by heating the resist to form a low viscosity liquid such as is compatible with nebulization and applying the techniques of jet or impact nebulization and aerosol particle sizing to form the aerosol. A method is further described of using ionized gas to confer charge onto the aerosol particles and using a progression of charging devices establish an electric field directing the flow of charged particles to the substrate. The progression of charging devices and associated apparatus results in high collection efficiency for the aerosol particles.

    Abstract translation: 本发明涉及在基材上形成薄聚合物膜。 描述了用于将固体聚合物抗蚀剂转化成小颗粒气溶胶的装置，将颗粒静电充电并沉积到基底上，并将颗粒流入连续层。 进一步描述了将固体抗蚀剂转化为小颗粒气溶胶的装置，通过加热抗蚀剂以形成与雾化相容的低粘度液体，并应用喷射或冲击雾化和气溶胶颗粒尺寸的技术以形成气溶胶。 进一步描述了使用电离气体将电荷赋予气溶胶颗粒的方法，并且使用充电装置的进展建立了将带电粒子流引导到基底的电场。 充电装置和相关设备的进展导致气溶胶颗粒的高收集效率。

    METHODS OF IMPRINT PATTERNING OF IRREGULAR SURFACE
    8.
    发明申请
    METHODS OF IMPRINT PATTERNING OF IRREGULAR SURFACE 有权
    非正式表面印刷方法

    公开(公告)号：US20150340540A1

    公开(公告)日：2015-11-26

    申请号：US14156521

    申请日：2014-01-16

    Applicant: Massachusetts Institute of Technology ,  1366 Technologies, Inc.

    Inventor： Benjamin F. Polito ,  Holly G. Gates ,  Emanuel M. Sachs

    IPC: H01L31/18 ,  H01L31/0236

    CPC classification number: H01L31/182 ,  B29C43/021 ,  B29C43/222 ,  B29C59/02 ,  B29C2043/025 ,  B29C2043/3634 ,  B29C2043/3652 ,  B29C2043/465 ,  B29C2059/023 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002 ,  H01L31/0236 ,  H01L31/02363 ,  Y02E10/50

    Abstract: Patterned substrates for photovoltaic and other uses are made by pressing a flexible stamp upon a thin layer of resist material, which covers a substrate, such as a wafer. The resist changes phase or becomes flowable, flowing away from locations of impression, revealing the substrate, which is subjected to some shaping process. A typical substrate is silicon, and a typical resist is a wax. Workpiece textures include extended grooves, discrete, spaced apart pits, and combinations and intermediates thereof. Platen or rotary patterning apparatus may be used. Rough and irregular workpiece substrates may be accommodated by extended stamp elements. Resist may be applied first to the workpiece, the stamp, or substantially simultaneously, in discrete locations, or over the entire surface of either. The resist dewets the substrate completely where desired.

    Abstract translation: 用于光伏和其他用途的图案化基板是通过将柔性印模压在覆盖诸如晶片的基底的抗蚀剂材料薄层上而制成的。 抗蚀剂改变相位或变得可流动，从印模的位置流出，露出经受一些成形过程的基底。 典型的基底是硅，典型的抗蚀剂是蜡。 工件纹理包括延伸凹槽，离散的，间隔开的凹坑，以及它们的组合和中间体。 可以使用压板或旋转图案形成装置。 粗糙和不规则的工件衬底可以由延长的印模元件容纳。 抗蚀剂可以首先施加到工件，印模或基本上同时地在离散的位置，或者在两者的整个表面上。 抗蚀剂在需要时完全将基材脱模。

    APPARATI FOR FABRICATING THIN SEMICONDUCTOR BODIES FROM MOLTEN MATERIAL
    9.
    发明申请
    APPARATI FOR FABRICATING THIN SEMICONDUCTOR BODIES FROM MOLTEN MATERIAL 有权
    用于从硬质材料制造薄半导体体的方法

    公开(公告)号：US20140220171A1

    公开(公告)日：2014-08-07

    申请号：US14250581

    申请日：2014-04-11

    Applicant: 1366 TECHNOLOGIES, INC.

    Inventor： Emanuel M. Sachs ,  Richard L. Wallace ,  Eerik T. Hantsoo ,  Adam M. Lorenz ,  G.D. Stephen Hudelson ,  Ralf Jonczyk

    IPC: B29C33/44

    CPC classification number: B29C33/44 ,  C30B11/007 ,  C30B15/30 ,  C30B19/068 ,  C30B28/04 ,  C30B29/06

    Abstract: A pressure differential can be applied across a mold sheet and a semiconductor (e.g. silicon) wafer (e.g. for solar cell) is formed thereon. Relaxation of the pressure differential can allow release of the wafer. The mold sheet may be cooler than the melt. Heat is extracted through the thickness of the forming wafer. The temperature of the solidifying body is substantially uniform across its width, resulting in low stresses and dislocation density and higher crystallographic quality. The mold sheet can allow flow of gas through it. The melt can be introduced to the sheet by: full area contact with the top of a melt; traversing a partial area contact of melt with the mold sheet, whether horizontal or vertical, or in between; and by dipping the mold into a melt. The grain size can be controlled by many means.

    Abstract translation: 可以在模板上施加压力差，并且在其上形成半导体（例如硅）晶片（例如，用于太阳能电池）。 压差的松弛可以允许晶片的释放。 模具片可以比熔体更冷。 通过成形晶片的厚度提取热量。 凝固体的温度在其宽度上基本均匀，导致低应力和位错密度和更高的晶体学质量。 模板可以允许气体流过它。 可以通过以下方式将熔体引入片材：与熔体的顶部完全区域接触; 穿过熔体与模板的部分区域接触，无论是水平还是垂直的，或者在其间; 并将模具浸入熔体中。 可以通过许多方法控制晶粒尺寸。

    Selected methods for efficiently making thin semiconductor bodies from molten material for solar cells and the like
    10.
    发明授权
    Selected methods for efficiently making thin semiconductor bodies from molten material for solar cells and the like 有权
    用于从太阳能电池等的熔融材料有效地制造薄的半导体本体的选择的方法

    公开(公告)号：US08696810B2

    公开(公告)日：2014-04-15

    申请号：US13654638

    申请日：2012-10-18

    Applicant: 1366 Technologies Inc.

    Inventor： Eerik T. Hantsoo ,  G. D. Stephen Hudelson ,  Ralf Jonczyk ,  Adam M. Lorenz ,  Emanuel M. Sachs ,  Richard L. Wallace

    IPC: C30B15/22

    CPC classification number: B29C33/44 ,  C30B11/007 ,  C30B15/30 ,  C30B19/068 ,  C30B28/04 ,  C30B29/06

    Abstract: A pressure differential is applied across a mold sheet and a semiconductor (e.g. silicon) wafer (e.g. for solar cell) is formed thereon. Relaxation of the pressure differential allows release of the wafer. The mold sheet may be cooler than the melt. Heat is extracted almost exclusively through the thickness of the forming wafer. The liquid and solid interface is substantially parallel to the mold sheet. The temperature of the solidifying body is substantially uniform across its width, resulting in low stresses and dislocation density and higher crystallographic quality. The mold sheet must allow flow of gas through it. The melt can be introduced to the sheet by: full area contact with the top of a melt; traversing a partial area contact of melt with the mold sheet, whether horizontal or vertical, or in between; and by dipping the mold into a melt. The grain size can be controlled by many means.

    Abstract translation: 在模板上施加压差，在其上形成半导体（例如硅）晶片（例如，用于太阳能电池）。 压差的放松允许晶片的释放。 模具片可以比熔体更冷。 几乎完全通过成形晶片的厚度提取热量。 液体和固体界面基本上平行于模片。 凝固体的温度在其宽度上基本均匀，导致低应力和位错密度和更高的晶体学质量。 模板必须允许气体流过它。 可以通过以下方式将熔体引入片材：与熔体的顶部完全区域接触; 穿过熔体与模板的部分区域接触，无论是水平还是垂直的，或者在其间; 并将模具浸入熔体中。 可以通过许多方法控制晶粒尺寸。

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