公开(公告)号：US09035447B2

公开(公告)日：2015-05-19

申请号：US14257397

申请日：2014-04-21

Applicant: ABB Technology AG

Inventor： Franc Dugal ,  Dominik Trüssel

IPC: H01L23/48 ,  H01L23/492 ,  H01L23/051 ,  H01L23/62 ,  H01L23/00 ,  H01L25/07 ,  H01L23/58

CPC classification number: H01L23/492 ,  H01L23/051 ,  H01L23/585 ,  H01L23/62 ,  H01L24/72 ,  H01L25/072 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/00

Abstract: A power semiconductor module and a power semiconductor module assembly, which includes a plurality of power semiconductor modules, are disclosed. The power semiconductor module includes an electrically conducting base plate, an electrically conducting top plate, arranged in parallel to the base plate and spaced apart from the base plate, at least one power semiconductor device, which is arranged on the base plate in a space formed between the base plate and the top plate, and at least one presspin, which is arranged in the space formed between the base plate and the top plate to provide contact between the semiconductor device and the top plate. A metallic protection plate can be provided at an inner face of the top plate facing towards the base plate, wherein the material of the protection plate has a melting temperature higher than the melting temperature of the top plate.

Abstract translation: 公开了一种功率半导体模块和功率半导体模块组件，其包括多个功率半导体模块。 功率半导体模块包括导电基板，导电顶板，平行于基板并与基板间隔开，至少一个功率半导体器件，其设置在基板上形成的空间中 在基板和顶板之间，以及至少一个压扣，其布置在形成在基板和顶板之间的空间中，以提供半导体器件和顶板之间的接触。 金属保护板可以设置在顶板的面向底板的内表面处，其中保护板的材料的熔化温度高于顶板的熔化温度。

公开(公告)号：US20160027762A1

公开(公告)日：2016-01-28

申请号：US14878466

申请日：2015-10-08

Applicant: ABB Technology AG

Inventor： Samuel Hartmann ,  Franc Dugal ,  Olle Ekwall ,  Erik Doré

IPC: H01L25/07 ,  H01L23/492 ,  H01L23/051

CPC classification number: H01L25/072 ,  H01L23/051 ,  H01L23/492 ,  H01L2224/48091 ,  H01L2924/13055 ,  H01L2924/00014 ,  H01L2924/00

Abstract: A power semiconductor module includes a first main electrode, a second main electrode and a control terminal. The power semiconductor module includes controllable power semiconductor components arranged between the first main electrode and the second main electrode. At least some of the controllable power semiconductor components are arranged in a ring arrangement, wherein the controllable power semiconductor components of the ring arrangement are arranged at least approximately along a first circular line of the ring arrangement, and a control conductor track of the ring arrangement is arranged on the first main electrode, wherein the control conductor track runs at least approximately along a second circular line of the ring arrangement, and the second circular line runs concentrically relative to the first circular line.

Abstract translation: 功率半导体模块包括第一主电极，第二主电极和控制端子。 功率半导体模块包括布置在第一主电极和第二主电极之间的可控功率半导体部件。 至少一些可控功率半导体部件被布置成环形布置，其中环形布置的可控功率半导体部件至少大致沿着环形布置的第一圆形线布置，并且环形布置的控制导体轨道 布置在第一主电极上，其中控制导体轨道至少大致沿环形装置的第二圆形线延伸，并且第二圆形线相对于第一圆形线同心地延伸。