公开(公告)号：US20150102391A1

公开(公告)日：2015-04-16

申请号：US14055738

申请日：2013-10-16

Applicant: ANALOG DEVICES TECHNOLOGY

Inventor： Edward John Coyne

IPC: H01L29/808 ,  H01L29/66

CPC classification number: H01L29/808 ,  H01L29/0843 ,  H01L29/1058 ,  H01L29/66893 ,  H01L29/66901

Abstract: A method of forming a junction field effect transistor, the transistor comprising: a back gate; a channel; a top gate; a drain and a source in current flow with the channel; wherein the method comprises selecting a first channel dimension between the top gate and the back gate such that a significant current flow path in the channel occurs in a region of relatively low electric field strength.

Abstract translation: 一种形成结型场效应晶体管的方法，所述晶体管包括：背栅极; 一个渠道 顶门 电流与通道的漏极和源极; 其中所述方法包括选择所述顶栅极和所述后栅极之间的第一沟道尺寸，使得所述沟道中的有效电流流动路径发生在相对低的电场强度的区域中。

公开(公告)号：US20150014791A1

公开(公告)日：2015-01-15

申请号：US13939556

申请日：2013-07-11

Applicant: ANALOG DEVICES TECHNOLOGY

Inventor： Edward John Coyne ,  Breandan Pol Og O hAnnaidh ,  Seamus P. Whiston ,  William Allan Lane ,  Donal P. McAuliffe

IPC: H01L29/78 ,  H01L29/66

CPC classification number: H01L29/78 ,  H01L29/063 ,  H01L29/0878 ,  H01L29/1083 ,  H01L29/1095 ,  H01L29/402 ,  H01L29/404 ,  H01L29/42368 ,  H01L29/66477 ,  H01L29/66681 ,  H01L29/7824

Abstract: A semiconductor device having a first layer adjoining a semiconductor layer, and further comprising at least one field modification structure positioned such that, in use, a potential at the field modification structure causes an E-field vector at a region of an interface between the semiconductor and the first layer to be modified.

Abstract translation: 一种半导体器件，其具有与半导体层相邻的第一层，并且还包括至少一个场修改结构，其定位使得在使用中，场修改结构处的电位在半导体的界面区域处引起E场矢量 和要修改的第一层。